Single FETs, MOSFETs

Product OverviewThe AO4407A-L is a P-Channel enhancement MOS Field Effect Transistor designed for various power management applications. It features low RDS(ON), fast switching speeds, and a high-density cell design for improved performance. This device is avalanche rated, offers low leakage current, and is constructed with halogen-free material, making it a reliable and rugged choice for demanding applications.Product AttributesMaterial: Halogen freeTechnical SpecificationsP

Product OverviewThe PPJE8404 is a 30V N-Channel Enhancement Mode MOSFET with ESD protection. It features advanced trench process technology and is specifically designed for switch load and PWM applications. This MOSFET offers low on-state resistance at various gate-source voltages and is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard for green molding compound (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65

OSPF65R280 650V Super-Junction Power MOSFETThe OSPF65R280 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM (Figure of Merit) RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. Ideal for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: http://www.osen.net.cnCertifications: RoHS compliantT

Product OverviewThe SI2306 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It utilizes advanced trench process technology and is housed in a SOT-23 small outline plastic package. This device is halogen-free and RoHS compliant, offering high performance for various power management applications.Product AttributesBrand: (Parker Microelectronics)Origin: Shenzhen, ChinaCertifications: UL:94-V-0, Halogen free, RoHS

Product Overview The PPJA3460 is a 60V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It features low on-resistance (RDS(ON)) at various gate-source voltages and drain currents, utilizing an advanced trench process. This MOSFET is specifically engineered for switch load and PWM applications. It is compliant with EU RoHS 2011/65/EU directive and manufactured with a green molding compound (Halogen Free) according to IEC61249 Std. Product

Product Overview The SFS06R03PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique FSMOS technology. It is engineered for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched

Product OverviewThis P-channel MOS Field Effect Transistor (NP36P06SLG) is designed for high current switching applications. It features super low on-state resistance and low input capacitance, with a built-in gate protection diode. This product is designed for automotive applications and is AEC-Q101 qualified.Product AttributesBrand: Renesas ElectronicsCertifications: AEC-Q101 qualifiedMaterial: Pb-free (external electrode)Application: AutomotiveTechnical SpecificationsItemS

2SK2611 900V N-CHANNEL MOSFET The 2SK2611 is a 900V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction circuits, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: [2SK2611] Revision: Rev 21.2.10

Product OverviewThe PPJA3401 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology and offers low on-state resistance at various gate-source voltages. This product is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Package: SOT-23Certifications: EU RoHS 2011/65/EU,

Product OverviewThe OSD50N03T is a Low Voltage N-channel MOSFET designed for applications requiring fast switching speeds, low gate charge, and high power/current handling capabilities. It is RoHS compliant and suitable for DC to DC converters and synchronous rectification.Product AttributesBrand: OSENPublication Order Number: OSD50N03TRevision: 21.2.10Certifications: RoHS compliantTechnical SpecificationsParametersUnitConditionsMinTypMaxAbsolute Maximum RatingsDrain-Source

Product OverviewThe IRF840 is a 500V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and tested avalanche energy with improved dv/dt capability. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: ChinaModel Number: IRF840Publication Order Number:

OSPF65R650 650V Super-Junction Power MOSFETThe OSPF65R650 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM (Figure of Merit) RDS(on) for reduced conduction losses, 100% avalanche tested for enhanced ruggedness, and improved dv/dt capability. This MOSFET is RoHS compliant.ApplicationsHigh efficiency switch mode power suppliesPower factor correctionElectronic lamp ballastProduct AttributesBrand: OSENPublication Order

Product OverviewThe OSM15N10 X2 is a dual-channel device featuring low on-resistance, continuous current capability, low gate charge, low gate voltage, and high current conduction capability. It is suitable for applications such as load switching and control. The device is housed in a package.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterValueConditionsOn

Product OverviewThe PJM10H06NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications, including uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and is fully characterized for avalanche voltage and current. With a VDS of 100V and ID of 6A, it offers RDS(on) < 140m @VGS=10V.Product AttributesBrand: PingJingSemiPackage: SOT-23-3Marking Code: 0106CTechnical SpecificationsParameterSymbolTest ConditionM

Product Overview The OSG80R250FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. Engineered with charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is optimized for high power density applications, offering superior switching performance and robust avalanche capability to meet the highest efficiency standards. It is ideal for

Product Overview The OSG65R580DEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. Utilizing charge balance technology, it offers outstanding low on-resistance and lower gate charge, minimizing conduction loss and providing superior switching performance with robust avalanche capability. This series is optimized for balanced switching characteristics, achieving a compromise between EMI and efficiency, enabling power supply systems to

2N7002K N-Channel Enhancement Mode MOSFET - ESD ProtectedThe 2N7002K is a 60V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers very low leakage current in off-condition, making it ideal for battery-operated systems. This ESD-protected device is specially designed for applications such as Solid-State Relays, Drivers (Relays, Displays, Lamps, Solenoids, Memories), and more

Product OverviewThe PJM70N30DL is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free, making it suitable for applications requiring high reliability and environmental consciousness. This MOSFET is designed for load switching, battery protection, and uninterruptible power supply systems, offering a VDS of 30V and a continuous ID of 70A with low on-resistance.Product

Product OverviewThe PJM06C40PA is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable choice for various electronic designs.Product AttributesBrand: PingJingSemiCertifications: RoHS, Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical SpecificationsParameterSymbolN-Channel Test

Product OverviewThis is a channel device in a package that achieves low on-resistance and continuous current at a specific gate-source voltage. It features low gate charge, low gate voltage, and high current conduction capability. Suitable for applications such as load switching and control.Product AttributesPackage: Technical SpecificationsModelGateDrainSourceOSM45N10 XXXXX / 45N10 YMLLL1232411220032_orisilicon-OSM45N10_C41417376.pdf