Single FETs, MOSFETs

Product Overview The OSG60R099KSZF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Z series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. Integrated with a fast recovery diode (FRD), it offers minimized reverse recovery time, making it ideal for resonant switching topologies that demand higher efficiency, reliability, and

Product Overview The UJ4C075044B7S is a 750V, 44mW G4 SiC FET, engineered with a unique 'cascode' circuit configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device. This design offers standard gate-drive characteristics, making it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. It excels in applications requiring fast switching and standard gate drive, such as EV charging, switch mode power

OSPF12N65 650V N-CHANNEL MOSFETThe OSPF12N65 is a 650V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSPF12N65Revision: Rev 21.2.10Package: TO

Product OverviewThe OSP150N08G is an N-Channel Power Trench MOSFET from OSEN, designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is suitable for DC to DC converters and synchronous rectification.Product AttributesBrand: OSENPublication Order Number: OSP150N08GRevision: 21.2.10Certifications: RoHS compliantTechnical SpecificationsParametersUnitValueCondi

Product OverviewThe BSS84 is a P-Channel Enhancement Mode Power MOSFET designed for high-density applications. It features an advanced trench process technology for ultra-low on-resistance and is housed in a small outline SOT-23 plastic package. This device is halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: Parker Microelectronics ()Origin: Shenzhen, ChinaPackage Type: SOT-23 Small Outline Plastic PackageCertifi

Product OverviewThe IRFZ44NPBF is a 60V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive, and tested avalanche energy. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: IRFZ44NPBFPackage: TO-220Technical SpecificationsParametersUnitCo

Product OverviewThe AO3400 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 small outline plastic package. It features a high-density cell design for ultra-low on-resistance, utilizing advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: Origin: Shenzhen, ChinaPackage: SOT-23 Small Outline Plastic PackageCertifications: UL: 94V-0, Halogen free, RoHS

Product OverviewThe AO3415 is a P-Channel Enhancement Mode Power MOSFET from Parker Microelectronics, designed with an advanced trench process technology. It features a high-density cell design for ultra-low on-resistance and is housed in a small outline SOT-23 plastic package. This MOSFET is ideal for applications such as battery protection, load switching, and power management.Product AttributesBrand: (Parker Microelectronics)Package: SOT-23 Small Outline Plastic PackageCer

Product OverviewThe PJM04DP30DFA is a Dual P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(ON), making it suitable for applications such as PWM, load switching in portable devices, and general power management. With a VDS of -30V and ID of -4.1A, it offers a maximum RDS(on) of 60m at VGS=-10V.Product AttributesBrand: Pingjing SemiconductorProduct Code: PJM04DP30DFAPackage Type: DFN2x2A-6LRevision: 1

Product Overview The Niu Hang NPS13N50F is a 500V N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power applications. It features low RDS(ON) and ultra-low gate charge, making it suitable for adapters, PCs, PDs, chargers, LED drivers, and switched-mode power supplies (SMPS), including uninterruptible power supplies (UPS). This RoHS compliant component is 100% UIS and RG tested, ensuring reliability and performance in demanding environments. Product

Product OverviewThe PPJT138K is a 50V N-Channel Enhancement Mode MOSFET featuring ESD protection. It is designed with advanced trench process technology, making it ideal for battery-operated systems, solid-state relays, and drivers for relays, displays, and memories. This MOSFET offers low on-state resistance at various gate-source voltages and drain currents, ensuring efficient operation. It is ESD protected up to 2KV HBM and compliant with EU RoHS 2011/65/EU directive and

Product OverviewThe AO3401 is a P-Channel Enhancement Mode Power MOSFET housed in a SOT-23 Small Outline Plastic Package. It features a high-density cell design for ultra-low on-resistance, advanced trench process technology, and is halogen-free and RoHS compliant. This MOSFET is suitable for various power management applications requiring efficient switching and low conduction losses.Product AttributesBrand: (Parker Microelectronics)Origin: Shenzhen, ChinaCertifications: UL:

Product Overview The SFG10S10PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor. Built on Oriental Semiconductors unique device design, it offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and

Product OverviewThe PJA3441-AU is a 40V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced Trench Process Technology, AEC-Q101 qualification, and is lead-free in compliance with EU RoHS 2.0. The device is housed in a SOT-23 package.Product AttributesBrand: Panjit International Inc.Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC 61249 standard (Green molding compound)Package Type: SOT-23Packing Type: 3K pcs / 7

Product OverviewThe OSEN OSH50N50 is a 500V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. This MOSFET is tested for avalanche energy and is suitable for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by .cn domain

Product OverviewThe PPJA3411-AU is a 20V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, AEC-Q101 qualification, and compliance with EU RoHS 2.0. This MOSFET offers low RDS(ON) at various gate-source voltages, making it suitable for efficient power management.Product AttributesBrand: Panjit International Inc.Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per

PJM08C60PA N and P-Channel Complementary Power MOSFETThe PJM08C60PA is a complementary N-Channel and P-Channel Power MOSFET designed for high power and current handling capabilities. Featuring advanced trench technology and a low on-resistance, this device offers fast switching speeds and is available in a lead-free SOP-8 surface mount package. It is suitable for various applications requiring efficient power management.Product AttributesBrand: PingJingSemiOrigin: ChinaMateri

Product Overview The OSG65R260FSF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS S series. This high voltage MOSFET utilizes charge balance technology to deliver outstanding low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. Optimized for aggressive EMI standards, it is designed for ease of use in smaller power supply systems, meeting both efficiency and EMI requirements. Key

Product Overview The NSH079N15C from Guangdong Niuhang Specification Electronic Technology Co., Ltd. is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for improved efficiency, low gate charge for fast switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested and is suitable for DC/DC converters, synchronous rectification, high-frequency circuits,

PJM3407PSA P-Channel Enhancement Field Effect Transistor The PJM3407PSA is a P-channel enhancement mode field-effect transistor designed with a high-density cell structure for ultra-low on-resistance (RDS(on)). It offers low gate charge and is suitable for load switch and PWM applications. Key features include VDS=-30V, ID=-4.1A, and RDS(on)=50m (Typ.)@VGS=-10V. Product Attributes Brand: Pingjingsemi Product Code: PJM3407PSA Package: SOT-23 Technical Specifications Parameter