Single FETs, MOSFETs

Product Overview The OSG65R260FSF_NB is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. It offers low RDS(on), low gate charge, and fast switching capabilities with excellent avalanche characteristics. This MOSFET is designed for high-efficiency applications such as active power factor correction and switching mode power supplies, including server power supplies and chargers. Its features include extremely low

Product OverviewThe OSH50N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. This MOSFET is ideal for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: http://www.osen.net.cnPublication Order Number: [OSH50N20]Revision: Rev 21.2

Product Overview The NSS085N100P5 is a high-performance N-channel 100V Enhancement Mode Power MOSFET from Niu Hang. It features advanced trench MOSFET technology, offering low RDS(ON) and ultra-low gate charge for efficient power handling. This RoHS Compliant component is 100% UIS and RG Tested, providing high power and current handling capabilities. It is suitable for a range of applications including PD Charger V-BUS, SMPS 2nd Synchronous Rectifier, MB/VGA Vcore, BLDC Motor

Product OverviewThe PJM20P30TE is a P-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications. It features advanced trench technology, 100% avalanche testing, and RoHS compliance, making it suitable for power management solutions. Its robust design ensures reliable performance in demanding applications.Product AttributesBrand: PingjingsemiCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical Specificatio

Product OverviewThe PK632BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various power switching applications. It offers high current capability and low on-resistance, making it suitable for demanding electronic circuits.Product AttributesBrand: NIKO-SEMPackage: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitABSOLUTE MAXIMUM RATINGSVDS30VVGS±20VID (TC = 25 °C)78AID (TC = 100 °C)49AIDM

Product OverviewThis 60V P-Channel Enhancement Mode MOSFET in a SOT-23 package offers advanced trench process technology. It is specially designed for applications such as relay drivers and speed line drives. The device features low on-resistance and is compliant with EU RoHS 2011/65/EU directive and IEC61249 Std. (Halogen Free) green molding compound.Product AttributesBrand: Panjit International Inc.Package: SOT-23Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen

Product OverviewThe PJM60N20TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology, 100% avalanche tested, and RoHS compliant. It is halogen and antimony free, with a moisture sensitivity level of 3. This MOSFET is ideal for load switch and PWM applications, as well as general power management.Product AttributesBrand: PingJingSemiCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical SpecificationsParamet

Product OverviewThe PJM10N40PA is an N-Channel Enhancement Mode Power MOSFET designed for efficient load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable choice for various electronic designs.Product AttributesBrand: Pingjing SemiconductorOrigin: ChinaCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 3Technical

Product Overview Product AttributesBrand: 4N90SJPackage: Technical SpecificationsModelGateDrainSource4N90SJ1232504101957_orisilicon-OSM4N90SJ_C42464481.pdf

Product OverviewThe PJ8205 is an N-Channel Power MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers high power and current handling capability, making it suitable for various power management applications.Product AttributesBrand: Pingjing SemiconductorOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max

Product OverviewThe PPJW7N06A is a 60V N-Channel Enhancement Mode MOSFET utilizing Advanced Trench Process Technology. It is specially designed for switch load and PWM applications, offering low RDS(ON) values at various gate-source voltages and drain currents. This MOSFET is lead-free in compliance with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 standard.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2.0, IEC 61249Material:

PJM3415PDFA P-Channel Enhancement Mode Power MOSFETThe PJM3415PDFA is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications such as PWM, load switching, and general power management, offering a VDS of -20V and an ID of -4A with RDS(on) < 50m @VGS= -4.5V.Product AttributesBrand: PingjingsemiModel: PJM3415PDFAPackage:

Product OverviewThe PJQ4465AP-AU is a 60V P-Channel Enhancement Mode MOSFET designed for high-efficiency switching applications. It features low on-resistance (RDS(ON)), high switching speed, and low gate charge, making it suitable for various automotive and industrial applications. This AEC-Q101 qualified component is compliant with EU RoHS 2.0 and manufactured using a green molding compound.Product AttributesBrand: Panjit International Inc.Origin: Not specifiedMaterial: Not

Product OverviewThe PJM3018NSA is an N-Channel Enhancement Mode Power MOSFET designed for switching applications. It features low RDS(ON), a surface mount package, and ESD protection up to 2KV (HBM). With a VDS of 30V and ID of 0.5A, it offers a cost-effective solution for various electronic designs.Product AttributesBrand: PJM (implied by product code PJM3018NSA)Package: SOT-23ESD Protected (HBM) up to 2KVTechnical SpecificationsParameterSymbolTest ConditionMin.Typ.Max

Product Overview The OSG65R290xEF series are Enhancement Mode N-Channel Power MOSFETs from Oriental Semiconductor, designed with advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are ideal for applications requiring low RDS(on) and FOM, extremely low switching loss, excellent stability and uniformity, and ease of driving. Key applications include lighting, server power supplies, and

Product OverviewThe PPJD50N10AL is a 100V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers high current handling capabilities and is compliant with EU RoHS 2011/65/EU directive and uses a Green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)Package: TO

Product OverviewNIKO-SEM PK6B2BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high performance with a low on-resistance and efficient switching characteristics, making it suitable for power management solutions.Product AttributesBrand: NIKO-SEMModel: PK6B2BAPackage: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitDrain-Source Breakdown VoltageV(BR)DSSVGS =

Product OverviewThe PJM04P30SQ is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include VDS of -30V, ID of -4.1A, and RDS(on) < 65m @VGS= -10V.Product AttributesBrand: PingJingSemiPackage Type: SOT-89Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitDrain-Source Breakdown Voltage-V(BR

Product OverviewThe PE537BA is a P-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers advantages such as logic-level gate drive and a PDFN 3x3P package, making it suitable for space-constrained designs. This transistor is Halogen-free & Lead-Free.Product AttributesBrand: NIKO-SEMModel: PE537BAPackage: PDFN 3x3PCertifications: Halogen-free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUni

Product OverviewThe OSEN OSP65NF06 is a 60V N-channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt performance with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSP65NF06Revision: Rev 21.2.10Package: TO