Single FETs, MOSFETs

Product OverviewThe NIKO-SEM PK664BA is an N-Channel Enhancement Mode Field Effect Transistor designed for power applications. It features a PDFN 5x6P package, offering Halogen-Free & Lead-Free compliance.Product AttributesBrand: NIKO-SEMModel: PK664BAPackage: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsABSOLUTE MAXIMUM RATINGSDrain-Source VoltageVDS30VGate-Source VoltageVGS±20VContinuous Drain

Product OverviewThe PJM12P20DF is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance (RDS(ON)), making it suitable for applications requiring high performance and reduced power loss. Its robust design and specific electrical characteristics make it ideal for load switching and PWM applications.Product AttributesBrand: PingJingSemiPart Number: PJM12P20DFPackage Type: DFN2x2-6LMarking Code:

Product OverviewP-Channel Logic Level Enhancement Mode Field Effect Transistor designed for various applications. This device offers advantages such as Halogen-free & Lead-Free compliance, making it suitable for environmentally conscious designs.Product AttributesBrand: NIKO-SEMModel: PV563BAPackage: SOP-8Certifications: Halogen-free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsLimitUnitDrain-Source Breakdown VoltageV(BR)DSSVGS = 0V, ID = -250A-40VGate

Product Overview The Oriental Semiconductor OSG55R160FZF is an N-Channel Power MOSFET from the GreenMOS Z series, engineered with charge balance technology for exceptional low on-resistance and reduced gate charge. This MOSFET is designed to minimize conduction losses, deliver superior switching performance, and offer robust avalanche capability. Integrated with a fast recovery diode (FRD), it minimizes reverse recovery time, making it ideal for resonant switching topologies.

Product Overview The NSH110N15D is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. It is ideal for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives,

Product Overview The OSG80R300FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. Leveraging charge balance technology, this MOSFET offers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. It provides superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key applications

N-Channel Enhancement Mode Field Effect Transistor PM606BA The PM606BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-23(S) package and is Halogen-Free & Lead-Free. Product Attributes Brand: NIKO-SEM Package: SOT-23(S) Certifications: Halogen-Free & Lead-Free Technical Specifications Parameter Symbol Test Conditions Limit Units ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS TA = 25 C Unless Otherwise

Product Overview The SFS06R045UNF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Overview The BSS138 is a 50V N-Channel Enhancement Mode MOSFET with ESD protection, designed for battery-operated systems and solid-state relays. It features advanced Trench Process Technology for ultra-low on-resistance and very low leakage current. Applications include drivers for relays, displays, lamps, solenoids, and memories. Product Attributes Brand: Panjit International Inc. Package: SOT-23 Certifications: EU RoHS 2.0, IEC 61249 standard (Green molding

Product Overview The NSH110N15C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested. It is suitable for DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board

Product Overview The OSG70R600FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is engineered for superior switching performance and robust avalanche capability, making it ideal for high power density applications demanding the highest efficiency standards. Key applicatio

Product OverviewThe OSPF18N50H is a 500V N-channel MOSFET from OSEN, designed for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It features fast switching speed, high input impedance, low level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness.Product AttributesBrand: OSENPublication Order Number: OSPF18N50HRevision: Rev 21.2.10Package: TO-220FTechnical SpecificationsParametersSymbolRatingsUn

Product Overview The SFS08R03GNF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on proprietary device design for superior performance. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The high Vth series is specifically optimized for high-voltage systems requiring gate driving voltages greater than 10V. This MOSFET is ideal for applications such as switched-mode power supplies, motor drivers,

Product Overview The Niuhang NSS085N100C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-frequency circuits, motor drives, and automotive electronics. It features Niuhang's Advanced SGT Technology, offering low reverse transfer capacitances and low gate charge for reduced switching losses. This MOSFET is suitable for synchronous rectification applications and is 100% UIS and DVSD tested. Product Attributes Brand: Niuhang Electronic Specification

Product OverviewThe AO4407-L is a P-Channel enhancement MOS Field Effect Transistor designed for various power management applications. It features low RDS(on) due to its high-density cell design, fast switching capabilities, and a reliable, rugged construction. This transistor is avalanche rated and offers low leakage current, making it suitable for PWM applications, load switching, power management in portable/desktop PCs, and DC/DC conversion.Product AttributesMaterial:

Product OverviewThe PJM20N60SQ is a N-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features advanced trench technology, offering a low RDS(on) of less than 35m at VGS=10V and a high continuous drain current of 20A. This RoHS and Reach compliant component is halogen and antimony free, suitable for uninterruptible power supply systems.Product AttributesBrand: PingjingsemiCertifications: RoHS and Reach Compliant, Halogen and Antimony

Product Overview The NPS1N60S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, it features low RDS(ON) for reduced power loss, low gate charge for high-speed switching, and high EAS for robust performance. This MOSFET is ideal for applications such as AC/DC converters, adapters, chargers, LED drivers, high-frequency circuits, and switching power supplies. Product

Product OverviewThe OSP18N20 is a 200V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: ChinaProduct Order Number: OSP18N20Revision:

OSD65R1K0 650V Super-junction Power MOSFET The OSD65R1K0 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: OSD65R1K0 Certifications:

Product OverviewThe IRFP90N20DPBF is a 200V N-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low-level drive, and tested avalanche energy with improved dv/dt capability. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by .net.cn domain)Model Number: