Single FETs, MOSFETs
power management device PJSEMI PJM65H0D5NSA N Channel Enhancement Mode Power MOSFET for electronics
Product OverviewThe PJM65H0D5NSA is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers, and general power management applications. It features fast switching, low gate charge, low RDS(on), and low reverse transfer capacitances, making it an ...
switching 100V N channel MOSFET OSEN IRF3710PBF ideal for power supplies and electronic lamp ballasts
Product OverviewThe IRF3710PBF is a 100V N-CHANNEL MOSFET designed for high efficiency and ruggedness. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability. This MOSFET is suitable for applications such as high efficiency switch mode power supplies, ...
PANJIT PJW4N06A AU 60V N Channel MOSFET with Ultra Low On Resistance and Continuous Drain Current 4A
Product OverviewThe PPJW4N06A-AU is a 60V N-Channel Enhancement Mode MOSFET designed for various applications. It features an advanced trench process technology and a high-density cell design for ultra-low on-resistance, making it suitable for power management solutions. This AEC-Q101 qualified ...
700V Power MOSFET OSEN OSPF70R550 Designed for Switch Mode Power Supplies and Power Factor Correction
Product OverviewThe OSPF70R550 is a 700V Super-Junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high efficiency switch mode power supplies, power ...
Fast switching 30V N channel MOSFET OSEN A09T with enhanced ruggedness and low level drive capability
A09T 30V N-CHANNEL MOSFETThe A09T is a 30V N-channel MOSFET designed for high efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high efficiency switch ...
Versatile PAKER 2N7002K NChannel MOSFET for Battery Protection and 5V Logic Level Control Circuits
Product OverviewThe 2N7002K is an N-Channel Advanced Power MOSFET featuring split gate trench MOSFET technology and a high-density cell design for low RDS(ON). Its advanced design offers excellent heat dissipation in a small SOT-23 package, making it suitable for various applications including ...
P Channel MOSFET PJSEMI PJM3401JPSC featuring moisture sensitivity level 3 and halogen free construction
Product OverviewThe PJM3401JPSC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is halogen and antimony free and has a Moisture Sensitivity Level 3. This MOSFET is suitable for load switch and PWM applications, offering VDS=-30V, ID=-4.1A, and low RDS(on) values ...
P Channel Enhancement Mode MOSFET PJSEMI PJM09P30DF Ideal for Load Switching and PWM Power Control
Product OverviewThe PJM09P30DF is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switching, PWM applications, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for ...
20V N Channel MOSFET OSEN 2302 offering fast switching speed and ruggedness for electronic lamp ballasts
Product OverviewThis 20V N-Channel MOSFET offers fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. It is ideal for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: ...
20V MOSFET PANJIT PJT7600 R1 00001 Featuring Trench Process Technology and ESD Protection for Electronic
Product Overview The PPJT7600 is a 20V complementary enhancement mode MOSFET featuring ESD protection. It is specifically designed for switch load and PWM applications, utilizing an advanced Trench Process Technology. This device is lead-free, compliant with EU RoHS 2011/65/EU, and manufactured with ...
Green molding compound 20V n channel mosfet PANJIT PJT7808 R1 00001 for pwm and switch load circuits
Product OverviewThe PPJT7808 is a 20V N-Channel Enhancement Mode MOSFET designed for low voltage drive applications. Featuring advanced trench process technology and ESD protection, it is specially suited for switch load and PWM applications. This product is lead-free and manufactured with a green ...
N Channel Enhancement Mode Power MOSFET with Ultra Low On Resistance PAKER SI2302 SOT 23 Package
Product OverviewThe SI2302 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package and is halogen-free and RoHS compliant. This advanced trench process technology MOSFET offers ...
PANJIT PJA3460-AU R1 000A1 60V N-Channel MOSFET with green molding compound and low RDS ON resistance
Product OverviewThe PPJA3460-AU is a 60V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It features low on-state resistance (RDS(ON)) at various gate voltages, advanced trench process technology, and is specially designed for switch load and PWM applications. This ...
N channel MOSFET PJSEMI PJM139NSA offering rugged design low gate charge and ESD protection ideal for battery powered devices
Product OverviewThe PJM139NSA is an N-Channel Enhancement Mode Power MOSFET designed for rugged and reliable performance. It features low gate charge and RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications requiring direct logic-level interface with TTL/CMOS, ...
N Channel Enhancement Mode MOSFET PJSEMI PJM2312JNSA with Low RDS on and 6A Continuous Drain Current
Product OverviewThe PJM2312JNSA is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology. It is designed for applications such as load switching, PWM applications, and power management. The device is RoHS and Reach compliant, and is Halogen and Antimony ...
SiC FET Qorvo UJ3C065080T3S featuring excellent reverse recovery and compatibility with standard gate drivers
SiC FET 650V - 80m Product Overview This SiC FET device is built upon a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si ...
High Current Dual N Channel MOSFET PJSEMI PJM8205DNSG SOT 23 6 with 20V Drain Source Voltage Rating
Product OverviewThe PJM8205DNSG is a Dual N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge due to its advanced trench process technology. It offers high power and current handling capabilities, with key specifications including VDS= 20V and ID= 5A, and RDS(on)< ...
Low On Resistance Complementary N Channel and P Channel MOSFET PJSEMI PJM08C40PA for Power Switching
Product OverviewThe PJM08C40PA is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, halogen and antimony free, and Moisture Sensitivity Level 3. This device ...
N Channel Enhancement Mode Power MOSFET with High Density Cell Design PAKER SI2328 in SOT 23 Package
Product OverviewThe SI2328 is an N-Channel Enhancement Mode Power MOSFET from Parker Microelectronics, designed for high-density cell applications. It features an ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is housed in a SOT-23 ...
Low On Resistance Enhancement Mode MOSFET ORIENTAL SEMI OSG70R750DF for Power Conversion Applications
Product Overview The OSG70R750DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching ...
