Single FETs, MOSFETs

Product OverviewThe PPJW4N06A-AU is a 60V N-Channel Enhancement Mode MOSFET designed for various applications. It features an advanced trench process technology and a high-density cell design for ultra-low on-resistance, making it suitable for power management solutions. This AEC-Q101 qualified component is compliant with EU RoHS 2.0 and uses a green molding compound, ensuring environmental responsibility.Product AttributesBrand: Panjit International Inc.Certifications: AEC

Product OverviewThe IRF3710PBF is a 100V N-CHANNEL MOSFET designed for high efficiency and ruggedness. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability. This MOSFET is suitable for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: IRF3710PBFRevision: 21.2.10Technical SpecificationsParametersUnitCondit

Product OverviewThe OSPF70R550 is a 700V Super-Junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: OSPF70R550Certifications: RoHS compliantTechnical SpecificationsSymbolParameter

A09T 30V N-CHANNEL MOSFETThe A09T is a 30V N-channel MOSFET designed for high efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENPublication Order Number: A09TRevision: 21.2.10Package: SOT-23Technical

Product OverviewThe 2N7002K is an N-Channel Advanced Power MOSFET featuring split gate trench MOSFET technology and a high-density cell design for low RDS(ON). Its advanced design offers excellent heat dissipation in a small SOT-23 package, making it suitable for various applications including voltage regulator modules, point-of-load modules, battery protection, load switching, brushed and brushless motor control, and 5V logic-level control. It also includes ESD protection

Product OverviewThe PJM3401JPSC is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is halogen and antimony free and has a Moisture Sensitivity Level 3. This MOSFET is suitable for load switch and PWM applications, offering VDS=-30V, ID=-4.1A, and low RDS(on) values at specified gate-source voltages.Product AttributesBrand: PingJingSemiOrigin: ChinaMaterial: Halogen and Antimony FreeCertifications: Moisture Sensitivity Level 3Technical

Product OverviewThe PJM09P30DF is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for load switching, PWM applications, and power management. This RoHS and Reach compliant, Halogen and Antimony Free component offers low on-resistance and is suitable for various power management scenarios.Product AttributesBrand: PingjingsemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 1Technical

Product Overview The PPJT7600 is a 20V complementary enhancement mode MOSFET featuring ESD protection. It is specifically designed for switch load and PWM applications, utilizing an advanced Trench Process Technology. This device is lead-free, compliant with EU RoHS 2011/65/EU, and manufactured with a green molding compound as per IEC61249 Std. (Halogen Free). The SOT-363 package is suitable for various electronic designs. Product Attributes Brand: Panjit International Inc.

Product OverviewThis 20V N-Channel MOSFET offers fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. It is ideal for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENModel: 2302Package: SOT-23Publication Order Number: [2302]Revision: 21.2.10Technical SpecificationsParametersSymbolRatingsUnitConditionsDrain-Source VoltageVDSS20VGate-Source

Product OverviewThe PPJT7808 is a 20V N-Channel Enhancement Mode MOSFET designed for low voltage drive applications. Featuring advanced trench process technology and ESD protection, it is specially suited for switch load and PWM applications. This product is lead-free and manufactured with a green molding compound, complying with EU RoHS and IEC61249 standards.Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free

Product OverviewThe SI2302 is an N-Channel Enhancement Mode Power MOSFET featuring a high-density cell design for ultra-low on-resistance. It is housed in a standard SOT-23 small outline plastic package and is halogen-free and RoHS compliant. This advanced trench process technology MOSFET offers high performance for various power management applications.Product AttributesBrand: (Parker Microelectronics)Origin: (Shenzhen)Package: SOT-23Certifications: UL 94V-0, Halogen free,

Product OverviewThe PPJA3460-AU is a 60V N-Channel Enhancement Mode MOSFET designed for efficient switching applications. It features low on-state resistance (RDS(ON)) at various gate voltages, advanced trench process technology, and is specially designed for switch load and PWM applications. This MOSFET is AEC-Q101 qualified, lead-free in compliance with EU RoHS 2.0, and uses a green molding compound.Product AttributesBrand: Panjit International Inc.Certifications: AEC-Q101

Product OverviewThe PJM139NSA is an N-Channel Enhancement Mode Power MOSFET designed for rugged and reliable performance. It features low gate charge and RDS(on), along with ESD protection up to 2KV (HBM). This MOSFET is suitable for applications requiring direct logic-level interface with TTL/CMOS, such as solid-state relays and battery-operated systems.Product AttributesBrand: PJMOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCertifications: Not specifiedTe

Product OverviewThe PJM2312JNSA is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology. It is designed for applications such as load switching, PWM applications, and power management. The device is RoHS and Reach compliant, and is Halogen and Antimony Free. It offers a VDS of 20V and ID of 6A, with low RDS(on) values.Product AttributesBrand: PingjingsemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture

SiC FET 650V - 80m Product Overview This SiC FET device is built upon a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-220-3L package, this device offers ultra-low gate charge and exceptional reverse recovery characteristics, making

Product OverviewThe PJM8205DNSG is a Dual N-Channel Enhancement Mode Power MOSFET featuring excellent RDS(on) and low gate charge due to its advanced trench process technology. It offers high power and current handling capabilities, with key specifications including VDS= 20V and ID= 5A, and RDS(on)< 25m @VGS= 4.5V. This MOSFET is designed for efficient power management applications.Product AttributesBrand: PingjingsemiMarking Code: 8205Technical SpecificationsParameterSymbolT

Product OverviewThe PJM08C40PA is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, halogen and antimony free, and Moisture Sensitivity Level 3. This device offers low on-resistance and is suitable for various power switching applications.Product AttributesBrand: PingJingSemiProduct Line: PJMPackage: SOP-8Certifications: RoHS, Reach

Product OverviewThe SI2328 is an N-Channel Enhancement Mode Power MOSFET from Parker Microelectronics, designed for high-density cell applications. It features an ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is housed in a SOT-23 small outline plastic package, making it suitable for various electronic applications.Product AttributesBrand: Parker Microelectronics ()Origin: Shenzhen, ChinaPackage Type: SOT

Product Overview The OSG70R750DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it optimized for extreme switching performance and high power density applications. Ideal for

2SK2225 Silicon N Channel MOS FETThe 2SK2225 is a Silicon N Channel MOS FET designed for high-speed power switching applications. It features a high breakdown voltage (VDSS = 1500 V), fast switching speeds, and low drive current, making it suitable for switching regulators and DC-DC converters. It offers no secondary breakdown and is available in a TO-3PFM package.Product AttributesBrand: RENESASPackage Code: PRSS0003ZA-APackage Name: TO-3PFMTechnical SpecificationsItemSymbol