Single FETs, MOSFETs

Product OverviewThe PJM10H03NSC is an N-Channel Enhancement Mode Power MOSFET designed for power switching applications and uninterruptible power supplies. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include a VDS of 100V and a continuous ID of 3A, with RDS(ON) as low as 136m (Typ.) at VGS = 10V.Product AttributesBrand: PingjingsemiModel: PJM10H03NSCType: N-Channel Enhancement Mode Power

Product OverviewThe PJT7828 is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and ESD protection. It is specially designed for applications such as relay drivers and speed line drives. This product complies with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).Product AttributesBrand: Panjit International Inc.Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)Technical

Product Overview The OSG60R580FTF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency

Product Overview The SFS06R03DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design for superior performance. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC

Product OverviewThe SI2301 is a P-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a standard SOT-23 small outline plastic package. This MOSFET is Halogen-free and RoHS compliant, making it suitable for various electronic applications.Product AttributesBrand: Parker Microelectronics ()Origin: Shenzhen, ChinaCertifications: UL: 94V-0, Halogen

Product OverviewThe ADS1194/6/8 family offers a highly integrated, low-power, 8-channel, 16-bit analog front-end for biopotential measurements. These devices enable the creation of scalable medical instrumentation systems with reduced size, power, and cost. They feature flexible input multiplexers, on-chip test signals, temperature and lead-off detection, and integrated amplifiers for Wilson Center Terminal (WCT) and Goldberger terminals (GCT) generation. Multiple devices can

Product OverviewThe PJM100N30TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free. This MOSFET is designed for applications such as load switching, battery protection, and uninterruptible power supplies, offering high performance with low on-resistance.Product AttributesBrand: PingJingSemiCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture Sensitivity

Product OverviewThe PJM20H02NSC is an N-Channel Enhancement Mode Power MOSFET designed for synchronous buck converter applications. It features advanced trench technology, offering robust performance with a VDS of 200V and ID of 1.5A. This RoHS and Reach compliant component is halogen and antimony free, with a Moisture Sensitivity Level of 3.Product AttributesBrand: PingJingSemiModel: PJM20H02NSCCertifications: RoHS, Reach Compliant, Halogen and Antimony FreeMoisture

UnitedSiC UJ4C075023K3S 750V, 23mW SiC FET Product Overview The UnitedSiC UJ4C075023K3S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. Utilizing a unique 'cascode' circuit configuration, it combines a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This allows for a direct 'drop-in replacement' for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device excels in

Product OverviewThe PPJC7401 is a 30V P-Channel Enhancement Mode MOSFET designed for switch load and PWM applications. It features advanced trench process technology, offering low on-state resistance at various gate-source voltages. This device is lead-free and manufactured with a green molding compound, complying with EU RoHS 2.0 and IEC 61249 standards.Product AttributesBrand: Panjit International Inc.Package: SOT-323Certifications: EU RoHS 2.0, IEC 61249 standardMaterial:

SiC FET UF4SC120030K4S Product Overview The UF4SC120030K4S is a 1200V, 30mW G4 SiC FET designed for high-performance switching applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off SiC FET device with standard gate-drive characteristics. This allows for seamless integration as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. The UF4SC120030K4S excels

Product OverviewThe PJM20DN30DL is a Dual N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% Avalanche Tested and RoHS Compliant, making it a reliable choice for various power management applications. This MOSFET offers low on-resistance and is halogen and antimony free, with a Moisture Sensitivity Level of 3.Product AttributesBrand: PJMTechnology: Advanced Trench TechnologyCertifications: RoHS Compliant, Halogen and Antimony FreeMoisture

Product OverviewThe PJM05DN20DFA is a Dual N-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low RDS(ON), making it suitable for applications requiring high performance and reduced power loss. With a VDS of 20V and ID of 5.5A, it offers a low RDS(on) of less than 28m at VGS=4.5V. This MOSFET is ideal for DC/DC converters and load switches in portable devices.Product AttributesBrand: Pingjing SemiconductorPackage

Product OverviewThe BSN20 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features advanced trench process technology and is housed in a compact SOT-23 small outline plastic package. This RoHS compliant and halogen-free component is ideal for various electronic applications requiring efficient power management.Product AttributesBrand: (Parker Microelectronics)Origin: (Shenzhen)Material: Epoxy UL:

Product OverviewThe PJM10H05PPA is a P-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is 100% avalanche tested, RoHS and Reach compliant, and halogen and antimony free. This MOSFET is designed for applications such as load switching, uninterruptible power supplies, and battery protection.Product AttributesBrand: PingjingsemiCertifications: RoHS and Reach CompliantMaterial: Halogen and Antimony FreeTechnical SpecificationsParameterSymbolTest

Product OverviewThe PJM3404NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering excellent RDS(on) and low gate charge. It is suitable for power management solutions.Product AttributesBrand: PingjingsemiPackage: SOT-23-3Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsDrain-Source VoltageVDS30VGate-Source VoltageVGS±20VDrain Current-ContinuousID5.8ADrain Current-PulsedIDMNote120

Product OverviewThe 2N7002K-L is a silicon N-Channel MOS Field-Effect transistor featuring a high-density cell design for low RDS(on). It functions as a voltage-controlled small signal switch with high saturation current capability and ESD protection. Its rugged and reliable design makes it suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: SZPIELENST.COMType: Siicon N-Channel MOS Field-Effect transistorPackage: SOT23Technical

Product OverviewThe PJM2312NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, and free from Halogen and Antimony. Designed for load switch and PWM applications, this MOSFET offers a VDS of 20V and a continuous ID of 5A, with low on-resistance (RDS(on) < 28m @VGS=4.5V).Product AttributesBrand: Pingjing SemiconductorOrigin: China (implied by domain)Certifications: RoHS and Reach Compliant, Halogen and Antimony

Product OverviewThe 2N7002-L is a silicon N-Channel MOS type field-effect transistor designed for voltage-controlled small signal switching. It features a high-density cell design for low RDS(on), a rugged and reliable construction, and high saturation current capability. This ESD-protected device is suitable for load switching in portable devices and DC/DC converters.Product AttributesBrand: SZPIELENST.COMMaterial: Silicon N-Channel MOS TypePackage: SOT23Technical Specificat

Product OverviewThe PJM2303PSA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications requiring efficient load switching, PWM control, and power management. This RoHS and Reach compliant component is halogen and antimony free, offering a moisture sensitivity level of 1.Product AttributesBrand: PingJingSemiCertifications: RoHS and Reach Compliant, Halogen and Antimony FreeMoisture Sensitivity Level: 1Technical