Single FETs, MOSFETs

Product Overview The IRFP460PBF is a 500V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. Product Attributes Brand: OSEN Publication Order Number: [IRFP460PBF] Revision: 21.2.10 Technical

Product Overview The MPF07N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 7A, and a low on-resistance of 1.1 (typ.) at VGS = 10V. Key advantages include low Crss and fast switching capabilities, making it suitable for adapters, LCD panel power supplies, e-bike chargers, and switching mode power supplies. The device is 100% avalanche tested

MPU04N65 N-Channel Power MOSFET The MPU04N65 is a 650V, 4A N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered for efficiency and reliability, it features low Crss, fast switching speeds, and is 100% avalanche tested. This MOSFET is ideally suited for applications such as chargers and standby power supplies, offering robust performance in demanding environments. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Power MOSFET Model:

Product OverviewThe IRF1404 is a 40V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.Product AttributesBrand: OSENOrigin: China (implied by URL)Package Type: TO-220Technical SpecificationsParameterSymbolMinTyp

Product OverviewThe PE5E4BA is an N-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed for protection and logic/load switch circuits. It features low RDS(on) for minimal conduction losses and an optimized gate charge for reduced switching losses. This device is PbFree, Halogen Free, and RoHS compliant, making it suitable for environmentally conscious applications.Product AttributesBrand: NIKO-SEMProduct Name: PE5E4BAType: N-Channel Enhancement Mode Field

Product OverviewThe YHJ-65P080DA is a normally-off Cascode GaN HEMT device designed for high-power applications. It offers high breakdown voltage, high current capability, and high operating speed, making it suitable for demanding power electronics systems. Its cascode configuration enhances performance and reliability.Product AttributesBrand: YHJOrigin: Jiangxi Yuhongjin Chip Technology Co., Ltd.Package Type: DFN 8x8 mmTechnical SpecificationsPart NumberDescriptionVDSS (min.

Product OverviewThe MDT30P10D is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications, including power switching and adapters/chargers, offering low ON resistance and low reverse transfer capacitances. The device is 100% tested for single pulse avalanche energy.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen Minos ()Material: SiliconCertifications: Not specifiedTec

Product Overview The MPF07N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-voltage applications. It features an 800V drain-source voltage rating, a continuous drain current of 7A, and a low on-resistance of 1.4 (typ.) at VGS = 10V. This MOSFET offers low gate charge and fast switching characteristics, making it suitable for various power supply applications including adapters, LCD panel power, e-bike chargers, and switching mode power

Product Overview The MJF11N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with advanced super junction technology. It offers a high breakdown voltage of 650V and a continuous drain current of 11A, with a low drain-source on-resistance of 0.32 (Typ.) at VGS = 10V. This MOSFET is designed for easy gate switching control and is suitable for various power applications including PFC stages, hard switching PWM stages, resonant switching PWM, PC power

Product Overview The MJQ30N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching control. Designed for high-performance applications, it offers a 650V breakdown voltage, 30A continuous drain current, and a low on-resistance of 0.095 (Typ.) at VGS = 10V. This enhancement mode MOSFET is ideal for use in UPS, EV Charging, Solar Inverters, and Server/Telecom Power supplies. Product Attributes Brand:

Product Overview The Niuhang Electronic NPS20N50C is an N-Channel Enhancement Mode Power MOSFET designed for high-reliability applications. Featuring NH's Advanced Planar DMOS Technology, it offers low Rds(on) for reduced on-state losses and high EAS for enhanced reliability, qualified according to JEDEC criteria. This MOSFET is suitable for AC/DC converters, adaptors and chargers, PC power supplies, and LED drives and lighting. Product Attributes Brand: Niuhang Electronic

Product Overview The MS8003L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology. It features a robust 80V drain-source voltage and a continuous drain current of 383A at 25C, with a low on-resistance (RDS(on)) of 1.0m typ. at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It is halogen-free and RoHS-compliant, with 100%

Product OverviewThe IRF640 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology reduces conduction loss, improves switching performance, and enhances avalanche energy. It is suitable for SMPS, high-speed switching, and general-purpose applications, offering features like fast switching, low Crss, 100% avalanche testing, and improved dv/dt capability. This is a RoHS product.Product AttributesBrand: Shenzhen Minos (implied by website

Product Overview The MU4007C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers a 40V drain-source voltage and a continuous drain current of 190A at 25C, with a low on-resistance of 3.3m (typ.) at VGS = 10V. This MOSFET is designed with excellent RDS(on) and low gate charge, making it suitable for applications such as load switches, PWM applications, and power management. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed. Product

Product Overview The MU4008Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers excellent RDS(on) and low gate charge, making it suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines. This MOSFET is halogen-free and RoHS-compliant, with 100% EAS guaranteed. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Enhancement

Product Overview The MPF10N65A is an N-Channel Power MOSFET designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 10A at 25C, and a low on-resistance of 0.80 (typ.) at VGS = 10V. Key advantages include low Crss and fast switching speeds, with 100% avalanche testing for enhanced reliability. This MOSFET is suitable for a variety of applications including adaptors, standby power supplies, switching power supplies,

Product OverviewThe MDT19N10L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.Product

Product OverviewThis N-Channel Enhancement Mode Field Effect Transistor, model PK6D0BA, is designed for general-purpose applications. It features a PDFN 5x6P package and is Halogen-Free & Lead-Free.Product AttributesBrand: NIKO-SEMPackage: PDFN 5x6PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolConditionsLimitUnitABSOLUTE MAXIMUM RATINGSVDS30VVGS20VIDTC = 25 C40ATC = 100 C25APulsed Drain CurrentIDM80AContinuous Drain CurrentTA = 25 C10ATA = 70

Product Overview The MU4003D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage, 50A continuous drain current, and a low on-resistance (RDS(on) Typ. = 8.0m@VGS = 10V). This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as load switches, PWM applications, and power management. The device is halogen-free and RoHS-compliant. Product Attributes Brand

Product Overview The MU3017Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This high-performance MOSFET offers a -30V drain-source voltage and -60A continuous drain current, with a low typical on-resistance of 5.3m at 10V gate-source voltage. It features low gate charge, 100% UIS tested, and 100% DVDS tested, ensuring high reliability and capability for handling power and current. Ideal for load switching, PWM applications, and power management.