Single FETs, MOSFETs

Product Overview MJD15N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology. This MOSFET offers a 650V breakdown voltage, 15A continuous drain current, and a typical on-resistance of 0.28 at VGS = 10V. It is designed for easy gate switching control and has undergone 100% avalanche testing. Its key applications include LED Lighting, LCD & PDP TV, Power Adaptors, Boost PFC Switches, and HB, AHB, or LLC Topologies.

Product Overview The MU3014D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for high-performance applications, including load switching, PWM applications, and power management. It is 100% EAS guaranteed and boasts a 30V drain-source voltage and 180A continuous drain current. Product Attributes Brand: Miracle Technology Co., Ltd. Technology

Product DescriptionThe MP11P20 is a P-channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for applications such as Switch Mode Power Supply (SMPS), high-speed switching, and general-purpose use. Key features include fast switching, 100% avalanche testing, and improved dv/dt capability.Product AttributesBrand: MNS-KXOrigin: Shenzhen Minos

Product OverviewThe MDT08N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design and fully characterized avalanche performance contribute to its stability and reliability.Product AttributesBrand: MNS (implied from www.mns-kx

Product Overview The MPF20N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 20A, and a low on-resistance of 0.50 (Max.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for adaptors, standby power supplies, and switching power supplies. Product Attributes Brand: Miracle

Product Overview The MU4004X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers excellent RDS(on) and low gate charge, with a guaranteed 100% EAS rating. This MOSFET is designed for applications such as load switches, PWM applications, and power management, providing reliable performance with key specifications including 40V drain-source voltage and 40A continuous drain current. Product Attributes Brand:

Product OverviewThe IRF630N is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is a suitable device for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include fast switching, low Crss, 100% avalanche tested, and improved dv/dt capability. This product is RoHS compliant

Product OverviewThe MPT120N08 is an 85V N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching.Product AttributesBrand: MNS-KX (derived from www.mns-kx.com)Certifications: RoHS productTechnical SpecificationsParameterValueUnitConditionsProduct

Product Overview The MJQ30N65F is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology. This MOSFET offers a 650V breakdown voltage, a continuous drain current of 30A, and a low on-resistance of 105m (typ.) at VGS = 10V. It is designed for easy gate switching control and is 100% avalanche tested. Ideal applications include server power, telecom power, EV charging, solar inverters, UPS, and various power supply topologies

Product Overview The MPP10N65A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 650V drain-source voltage, 10A continuous drain current, and a low on-resistance of 0.80 (typ.) at VGS = 10V. This MOSFET is characterized by low Crss and fast switching speeds, making it suitable for adapter applications, including LCD/PDP adapters and E-Bike chargers. It has undergone 100% avalanche testing for reliability.

Product DescriptionThe IRFZ44N is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product Overview The MU3009D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Featuring advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and power management. This MOSFET boasts a 30V drain-source voltage and a continuous drain current of 50A, with a typical RDS(ON) of 6.4m at VGS = 10V. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Advanced

Product Overview The NPS18N50F is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures reliability, making it suitable for demanding applications such as AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. This

Product Overview The MU3012Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Trench Technology. It offers excellent RDS(ON) and low gate charge, making it suitable for demanding applications such as load switching, PWM applications, and power management. This MOSFET is 100% EAS guaranteed and features a 30V drain-source voltage and a continuous drain current of 80A. Product Attributes Brand: Miracle Technology Co., Ltd.

Product OverviewThe MPF40N25 is a silicon N-channel Enhanced MOSFET designed using advanced MOSFET technology. This technology minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal device for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNSOrigin: Shenzhen Minos (implied from contact information)Material: SiliconCertifications: RoHS productTechnical

Product OverviewThe MPT110N8F6 is an N-Channel Enhanced Power MOSFET utilizing advanced double trench technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and high-speed switching applications, offering low on-resistance, fast switching, low gate charge, and high avalanche ruggedness.Product AttributesBrand: Shenzhen Minos (MNS-KX)Certifications: RoHSTechnical Specificati

Product Overview The NSH045N100S is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures robust reliability. This MOSFET is ideal for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS),

Product Overview The Niuhang NPS7N65S is an N-Channel Enhancement Mode Power MOSFET designed for high-frequency circuits and switching power supplies. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested and is suitable for AC/DC converters, adaptors, chargers, and LED drives. Product Attributes Brand: Niuhang Trademark: NH Product Line Code: FF (subject to actual changes

Product OverviewThe IRFZ24N is a N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent

PD632BA - N-Channel Enhancement Mode Field Effect Transistor The PD632BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It offers high performance with a low on-state resistance and significant current handling capabilities. This transistor is suitable for power switching and amplification circuits. Product Attributes Brand: NIKO-SEM Package: TO-252 Certifications: Halogen-Free & Lead-Free Technical Specifications