Single FETs, MOSFETs

Product Overview The MU3001T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device is designed for efficient load switching and Pulse Width Modulation (PWM) applications. It boasts a 30V drain-source voltage, a continuous drain current of 5.7A, and a low typical on-resistance of 19m at VGS = 10V. The MU3001T is compliant with RoHS and Halogen-Free standards, making it a suitable choice for environmentally conscious designs. Product Attributes

Product OverviewThe PE600BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a 30V Drain-Source Voltage, a low 9.8m On-State Resistance, and a high continuous drain current of 32A. This transistor is available in a PDFN 3x3P package, offering Halogen-Free & Lead-Free compliance.Product AttributesBrand: NIKO-SEMPackage: PDFN 3x3PCertifications: Halogen-Free & Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsM

Product OverviewThe MPT053N10 is an N-Channel Enhanced Power MOSFET designed for high-speed switching applications and motor drivers. It utilizes advanced double trench technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. Key features include low on-resistance, fast switching, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness.Product AttributesBrand: MNS (derived from www.mns-kx.com)Certifications

Product Overview The MP180N06 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design, fully characterized avalanche voltage and current, and good stability contribute to its performance. The device is available in TO-220 and TO-263

Product OverviewThe MPG50N06 is a high-performance Silicon N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and is suitable for a wide range of power switching and load switch applications. Key features include a VDS of 60V, a continuous ID of 50A, and low ON resistance. The device is 100% avalanche energy tested, ensuring reliability in demanding applications.Product AttributesBrand: MNS (derived from www.mns-kx.com)Origin: Shenzhen

Product DescriptionThe MDT15P10D is a 100V P-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

MU3015Y P-Channel Enhancement Mode MOSFET Product Overview The MU3015Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance power management applications. It features a -30V drain-source voltage, a continuous drain current of -130A, and a low on-resistance of 1.9m (typ.) at VGS = -10V. This MOSFET offers low gate charge, 100% UIS and DVDS tested, and high power and current handling capability, making it suitable for load

Product Overview MJD08N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and suitable for applications such as PD Adaptors, LED lighting, LCD & PDP TVs, and single-ended flyback or two-transistor forward topologies. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Power MOSFET Series: MJD08N70 Technical Specifications

Product DescriptionThe MPT03N08W is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal device for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNS-KXCertifications: RoHSTechnical SpecificationsParameterValueUnitsConditionsProduct CodeMPT03N08-WPackageTO

Product Overview The MS0006Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, as well as DC/DC converters. It features a 100V drain-source voltage, 140A continuous drain current, and a low typical on-resistance of 3.8m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, is halogen-free and RoHS-compliant, and is 100% EAS guaranteed. Product Attributes Brand:

Product Overview The IRF540NS-MNS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include a VDS of 100V, ID of 35A, and RDS(ON) < 30m at VGS=10V. The high-density cell design contributes to lower Rdson, while its fully characterized

Product Overview The MS0005L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology for superior performance. It features a high voltage rating of 100V and a continuous drain current of 325A at 25C, with a low on-resistance of 1.2m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for demanding applications such as power management in computing, CE, IE 4.0, and communication

Product OverviewN-Channel Logic Level Enhancement Mode Field Effect Transistor P45N02LDG is designed for various applications requiring efficient switching and power control. It features a TO-252 (DPAK) package and lead-free construction, suitable for modern electronic designs.Product AttributesBrand: NIKO-SEMModel: P45N02LDGPackage: TO-252 (DPAK)Plating: Lead-FreeTechnical SpecificationsParameterSymbolTest ConditionsMinTypicalMaxUnitsABSOLUTE MAXIMUM RATINGSGate-Source

Product OverviewThe MD70N10 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications due to its fast switching, 100% avalanche testing, and improved dv/dt capability. Key applications include Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC) systems.Product AttributesBrand: MINOSOrigin: Shenzhen, ChinaMaterial: Silicon N

Product Overview The NJH65R600S is an N-Channel Enhancement Super Junction MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for improved efficiency and low gate charge for faster switching. Its high EAS rating ensures reliability, making it suitable for AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. This MOSFET is 100% UIS and RG tested. Product Attributes Brand:

Product DescriptionThe MD59N30 is an N-Channel Enhanced MOSFET designed using advanced MOSFET technology to minimize conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNS-KXOrigin: Shenzhen Minos Technology Co., Ltd.Certifications: RoHS productPackage: TO-3PNTechnical SpecificationsParameterValueU

Product OverviewThe IRFP4227 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design for excellent RDS(ON). It offers low ON resistance, low reverse transfer capacitances, and is 100% avalanche energy tested. This MOSFET is suitable for power switching and load switch applications.Product AttributesBrand: MNS-KX (implied from URL and logo)Origin: Shenzhen Minos (Shenzhen Minos reserves the right to make changes...)Package: TO-247Technical

Product Overview The NPS16N60F is a 600V N-Channel Enhancement Mode Power MOSFET from Niu Hang Semiconductor. It features low RDS(ON), ultra-low gate charge, and is RoHS compliant. This MOSFET is 100% UIS and RG tested, making it suitable for applications such as adapters, PCs, PD chargers, LED drivers, and switched-mode power supplies (SMPS), including Uninterruptible Power Supplies (UPS). Its robust design and electrical characteristics ensure reliable performance in

Product OverviewThe MPG08N68 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched, and high-frequency circuits, as well as uninterruptible power supplies. Its design emphasizes high ESD capability, high density cell for ultra-low Rdson, and fully characterized avalanche voltage and current for good stability and uniformity

Product Overview The MPW50N30 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency switching applications. It features a 300V drain-source voltage, 50A continuous drain current, and a low on-resistance of 65m (typ.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing. This MOSFET is ideal for use in high-efficiency switch-mode power supplies, DC-DC converters, power management for inverter