Single FETs, MOSFETs

Product Overview The MSA002B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers a 110V drain-source voltage and a continuous drain current of 220A at 25C. It features excellent RDS(on) and low gate charge, with a typical RDS(on) of 2.2m at VGS = 10V. The device is 100% EAS guaranteed and is Halogen-free and RoHS-compliant. It is suitable for applications such as Load Switches, PWM applications, and Power Management. Product Attributes

Product OverviewThe MPF12N65 is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications, including power switching, hard switched, and high-frequency circuits, as well as Uninterruptible Power Supplies.Product AttributesBrand: MNSOrigin: Shenzhen, ChinaPackage: TO-220FTechnical SpecificationsParameterSymbolTest ConditionMinTypMaxUnitDrain-source Breakdown

Product Overview The MPF07N65A is an N-Channel Power MOSFET designed for high-performance switching applications. It features a 650V drain-source voltage, 7A continuous drain current, and a low on-resistance of 1.15 (typ.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche tested reliability. This MOSFET is suitable for various applications such as adapters, LCD panel power supplies, e-bike chargers, and switching mode power supplies.

Product OverviewThe MPT052N08S is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal component for synchronous rectification and high-speed switching applications.Product AttributesBrand: MNS (implied from www.mns-kx.com)Certifications: RoHS productOrigin: Shenzhen, China (implied from contact information)Technical

Product OverviewThe IRFB3306 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an

Product Overview The MU2302T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as load switching, PWM applications, and power management. This lead-free component offers 20V drain-source voltage and continuous drain current of 4.0A at 25C, with low static drain-source on-resistance. Product Attributes Brand: Miracle Technology Co., Ltd.

Product Overview The MS6001Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for high-frequency switching and synchronous applications, this MOSFET offers a robust and reliable solution for DC/DC converters. It features a 60V drain-source voltage, a continuous drain current of 111A at 25C, and a low on-resistance of 2.3m (typ.) at VGS = 10V. The device is characterized by its fast switching speed and is 100% EAS guaranteed, ensuring

Product OverviewThe MPF9N90 is a high-performance N-Channel Power MOSFET utilizing advanced technology to achieve excellent RDS(ON) and a wide range of applications. Key features include a high VDS of 900V, low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing. It is suitable for power switching applications, adapters, and chargers.Product AttributesBrand: MNS-KXOrigin: Shenzhen Minos Technology Co., Ltd.Technical SpecificationsP

Product Overview The MSA001C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance applications. It features a 110V drain-source voltage, a continuous drain current of 294A at 25C, and a low on-resistance (RDS(on)) of 2.0m typ. at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is halogen-free and RoHS-compliant, making it suitable for load switch, PWM, and power management

Product OverviewThe AO3400S is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. It is suitable for load switch and general applications, featuring high power and current handling capability. The device is lead-free and RoHS compliant.Product AttributesBrand: Shenzhen Minos (implied from website and contact info)Origin: China (implied from contact info)Certifications: RoHS CompliantTech

Product Overview The MU3400T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management. It is also lead-free. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Enhancement Mode MOSFET Technology: Advanced Trench Technology Environmental: Lead

Product OverviewThe MDT70N03 is a high-performance Silicon N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and Uninterruptible Power Supplies. Key advantages include a high-density cell design for ultra-low Rdson, fully characterized avalanche energy, good stability, and excellent heat

Product Overview The MJP29N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching control. It is 100% avalanche tested and rated at 500V and 29A, with a typical RDS(on) of 113m at VGS = 10V. This MOSFET is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies. Product Attributes Brand: Miracle

Product Overview The MDT35P10D is a P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON) performance. It is suitable for a wide range of applications, offering low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing. Key features include VDS=-110V and ID=-35A. Product Attributes Brand: SHENZHEN MINOS TECHOLOGY CO.,LTD Origin: China (implied by company name and website) Model: MDT35P10D

Product Overview The MU3407V is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It is designed for general applications and is suitable for use as a load switch. This RoHS and Halogen-Free compliant device offers a drain-source voltage of -30V and a continuous drain current of -4.3A, with a typical on-resistance of 39m at VGS = -10V. Product Attributes Brand: Miracle Technology Co., Ltd. Compliance: RoHS and Halogen-Free Package Type: SOT-23-3L Technical

DN2625: N-Channel Depletion-Mode Vertical DMOS FET The DN2625 is a low-threshold, depletion-mode (normally-on) transistor designed for high-speed switching and amplification applications. It features an advanced vertical DMOS structure for enhanced power handling and a positive temperature coefficient inherent in MOS devices, preventing thermal runaway. This device is ideal for applications requiring high breakdown voltage, high input impedance, low input capacitance, and

Product Overview The MU3010D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Trench Technology. It offers a 30V drain-source voltage and 80A continuous drain current, featuring a low typical on-resistance of 4.2m at VGS = 10V. Designed for efficiency and performance, this lead-free MOSFET is ideal for load switching, PWM applications, and power management solutions. Product Attributes Brand: Miracle Technology Co., Ltd.

Product Overview The MU3007Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 30V drain-source voltage and a continuous drain current of 160A at 25C. This MOSFET offers very low on-resistance (RDS(ON) of 1.5m typ. at VGS = 10V), fast switching, 100% avalanche testing, and improved dv/dt capability. It is suitable for applications such as Load Switches, PWM applications, and Power Management. Product Attributes Brand: Miracle Technology

Product DescriptionThe MPT037N08 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.Product AttributesBrand: MNS (derived from www.mns-kx.com)Certifications: RoHSTechnical SpecificationsOrdering CodePackageVDS (V)RDS(on) @ VGS=10V (m

Product OverviewThe MPT04N10P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for Battery Management Systems (BMS) and high-current switching applications.Product AttributesBrand: MNS (Shenzhen Minos Technology Co., Ltd.)Certifications: RoHSTechnical SpecificationsParameterSymbolValueUnitsConditionsDrain-to-Source