Single FETs, MOSFETs

Product DescriptionThe MPG40N10P is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity.Product

MPD07N65A N-Channel Power MOSFET The MPD07N65A is an N-Channel Power MOSFET designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 7A, and a low on-resistance of 1.15 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds and low Crss, making it suitable for adapter power supplies, LCD panel power, e-bike chargers, and switching mode power supplies. It is 100% avalanche tested for enhanced reliability.

Product Overview The MU0001D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It is 100% EAS guaranteed. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N-Channel Enhancement Mode MOSFET Technology:

Product DescriptionThe MD3N150 is a Silicon N-Channel Power MOSFET engineered with advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key advantages include low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen, ChinaTechnical SpecificationsOrdering CodePackagePr

Product Overview The MS0004C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 100V drain-source voltage and 120A continuous drain current with a typical on-resistance of 3.6m at VGS = 10V. This MOSFET offers ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC (SR) sub-systems, and power management in

Product Overview The MJD07N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring CRM(CQ) Super_Junction technology. It offers superior performance with low RDS(ON) for on-state efficiency and a low FOM for fast switching efficiency. This MOSFET is designed for applications including chargers, power supplies, LED/LCD/PDP TV and monitor lighting, and solar/renewable/UPS-micro inverter systems. Product Attributes Brand: Miracle Technology Co., Ltd.

Product Overview The Niuhang Electronic NSS045N100C is an N-Channel Enhanced Shielded Gate Trench Power MOSFET designed for high-efficiency and high-speed switching applications. It features low RDS(ON) for optimal efficiency, low gate charge for rapid switching, and high EAS for enhanced reliability. This MOSFET is 100% UIS and RG tested, making it suitable for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery

Product Overview The MSA003B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a high voltage rating of 110V and a continuous drain current of 181A at 25C, with a low on-resistance of 3.1m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is designed for applications such as load switching, PWM applications, and power management. The device is Halogen-free and RoHS-compliant. Product

Product DescriptionThe MD100N20 is a silicon N-channel Enhanced MOSFET, developed using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is an ideal transistor for applications such as Switched-Mode Power Supplies (SMPS), high-speed switching, and general-purpose use.General FeaturesVDS=200V, ID=100ARDS(ON) < 28m @ VGS=10VFast SwitchingLow Crss100% avalanche testedImproved dv

Product OverviewThe MPG30P10P is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers.Product AttributesBrand: MNSOrigin: Shenzhen Minos (implied from contact info)Material: SiliconColor: Not specifiedCertifications: Not specifiedTechnical SpecificationsParameterTest ConditionsMinTypMaxUnitsAbsolute Maximum RatingsVDSS Drain-to

Product Overview The MU4006X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage and 70A continuous drain current, with a low typical on-resistance of 4.3m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, leveraging advanced trench technology and a 100% EAS guaranteed rating. It is well-suited for load switching, PWM applications, and power management. Product Attributes Brand: Miracle

Product OverviewThe IRFZ44NS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. It is 100%

Product Overview The MU6002D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It offers a 60V breakdown voltage and a continuous drain current of 50A, with a typical on-resistance of 12m at VGS = 10V. This MOSFET is designed for excellent RDS(on) and low gate charge, featuring 100% EAS guaranteed performance. It is a halogen-free and RoHS-compliant component suitable for load switching, PWM applications, and power management. Product Attributes Brand:

MDT12N10L N-Channel Power MOSFETThe MDT12N10L is an N-Channel Power MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications, offering high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. This device is suitable for power switching applications, hard

Product Overview The MU3016Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers robust performance with a -30V drain-source voltage and a continuous drain current of -100A. It features a low gate charge and high power and current handling capability, making it ideal for DC/DC converters, high-frequency switching, and synchronous rectification applications. The device is 100% UIS Tested and 100% DVDS Tested. Product Attributes Brand:

Product OverviewThe MPG30N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation

Product Overview The MU2305T is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, offering a continuous drain current of -4.1A and a drain-source voltage of -20V. It is also lead-free. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Advanced Trench

MPF16N65 N-Channel Power MOSFET Product Overview The MPF16N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. Featuring a 650V breakdown voltage, 16A continuous drain current, and a low on-resistance of 0.55 (Max.) at VGS = 10V, this MOSFET offers fast switching speeds and 100% avalanche tested reliability. It is ideal for use in adapters, standby power supplies, and switching mode power supplies. Product

Product OverviewThe D15NF10L-MNS is an N-Channel Power MOSFET from MNS, utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is designed for a wide range of applications requiring high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability with high EAS. The MOSFET features an excellent package for good heat dissipation, making it suitable for power switching, hard switched and high

Product OverviewThe MPF13N50 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications including power switching, adapters, and chargers, offering low ON resistance and low reverse transfer capacitances. The device is 100% tested for single pulse avalanche energy.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen Minos Technology Co., Ltd.Technical SpecificationsSymbolP