Single FETs, MOSFETs
650V Breakdown Voltage Power MOSFET Miracle Power MPC16N65 Ideal for Switching Mode Power Supplies
Product Overview The MPC16N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component is designed for high-efficiency applications, featuring a 650V breakdown voltage, 16A continuous drain current, and a low on-resistance of 0.45 (typ.) at VGS = 10V. It offers fast switching characteristics and is 100% avalanche tested. Ideal for use in adapters, standby power supplies, and switching mode power supplies. Product Attributes Brand: Miracle Technology Co.,
P Channel Enhancement Mode MOSFET MIRACLE POWER MU2002X with 20V Drain Source Voltage and 55A Current
Product Overview The MU2002X is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Designed for high power and current handling, this MOSFET features a -20V drain-source voltage and a continuous drain current of -55A at 25C. It is suitable for applications such as load switching and PWM control. The product is 100% UIS and DVDS tested and is lead-free. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: P-Channel Enhancement Mode MOSFET
High Current N Channel MOSFET MIRACLE POWER MPQ50N30 Suitable for Power Management and DC DC Converters
Product Overview The MPQ50N30 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency switching applications. It features a 300V breakdown voltage, a continuous drain current of 50A at 25C, and a low on-resistance of 65m (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low Crss, and is 100% avalanche tested, making it suitable for high-efficiency switch mode power supplies, DC-DC converters, power management for inverter
Power MOSFET MIRACLE POWER MS8003C with 80V Drain Source Voltage and 100 Percent EAS Guaranteed
Product Overview The MS8003C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features an 80V drain-source voltage and a continuous drain current of 313A at 25C, with a low on-resistance of 1.5m (typ.) at VGS = 10V. This MOSFET is designed for excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It is RoHS-compliant and halogen-free, with 100% EAS guaranteed. Product Attributes Brand:
High voltage N Channel Power MOSFET MIRACLE POWER MPW04NA5 with 4A continuous current and low RDS ON resistance
Product Overview The MPW04NA5 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. It features a high breakdown voltage of 1500V and a continuous drain current of 4A. This MOSFET offers low ON resistance (RDS(ON) Typ. = 3.5 @ VGS = 10V), fast switching, low gate charge, and is 100% tested for single pulse avalanche energy. It is ideally suited for power switch circuits in adaptors and chargers. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: N
power control solution Minos IRF530 Power MOSFET with advanced trench technology and TO 220 packaging
Product OverviewThe IRF530 is an N-Channel Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of applications including power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity, and an excellent package for heat
switching transistor Minos MDT9N20 silicon MOSFET designed for high frequency power supply circuits
Product OverviewThe MDT9N20 is a silicon N-channel Enhanced MOSFET utilizing advanced MOSFET technology. It is designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is well-suited for applications such as SMPS, high-speed switching, and general-purpose use.Product AttributesBrand: MNSMaterial: SiliconCertifications: RoHS productTechnical SpecificationsParameterValueUnitDescriptionVDS200VDrain-to-Source VoltageID9ACont
Power MOSFET Minos MPG08N68S Featuring High EAS and Excellent Thermal Performance for Industrial Circuits
Product OverviewThe MPG08N68 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high density cell design ensures ultra-low Rdson, and the special process technology provides high ESD capability and good stability with high EAS. The device is fully
High speed switching silicon MOSFET Minos MP20N40 ideal for SMPS and avalanche energy applications
Product DescriptionThe MP20N40 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction loss, enhance switching performance, and improve avalanche energy. It is ideally suited for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key features include fast switching, low Crss, 100% avalanche tested, and improved dv/dt capability.Product AttributesBrand: MNS (Shenzhen Minos Technology Co., Ltd.
High Current P Channel Enhancement Mode MOSFET MIRACLE POWER MU3018Y with Low RDS ON and Gate Charge
Product Overview The MU3018Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with a guaranteed 100% EAS rating. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing a -30V drain-source voltage and a continuous drain current of -54A at 25C. Product Attributes Brand: Miracle Technology Co., Ltd. Product
Robust Minos MDT60N06D 60V N Channel Power MOSFET offering high pulsed drain current and heat dissipation
Product OverviewThe MDT60N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high density cell design, fully characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.Product
Low On Resistance MOSFET MIRACLE POWER MSA001B with High Continuous Current and Switching Capability
Product Overview The MSA001B is an N-Channel Enhancement Mode MOSFET manufactured by Miracle Technology Co., Ltd. It offers a high voltage rating of 110V and a continuous drain current of 294A at 25C, with a low typical on-resistance of 2.0m at VGS = 10V. This MOSFET is designed for applications requiring excellent RDS(on) and low gate charge, featuring 100% EAS guaranteed performance. It is also halogen-free and RoHS-compliant, making it suitable for load switching, PWM
N Channel MOSFET MIRACLE POWER MU3001X 30V 64A Continuous Drain Current Low On Resistance
Product Overview The MU3001X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a 30V drain-source voltage and a continuous drain current of 64A at 25C, with a low on-resistance of 4.1m (typ.) at VGS = 10V. This device is characterized by its reliable and rugged design, fast switching speed, and is 100% EAS guaranteed. A green device option is also
Silicon P Channel Power MOSFET Minos MDT40P10D for Power Switching Adapters and Chargers Applications
Product OverviewThe MDT40P10D is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of applications including power switching, adapters, and chargers.Product AttributesBrand: MNS (www.mns-kx.com)Origin: Shenzhen, ChinaMaterial: SiliconTechnical SpecificationsParameterTest ConditionsMinTypMaxUnitsAbsolute Maximum RatingsVDS Drain-to-Source Breakdown Voltage-100VID Drain Current (continuous)at
N Channel Enhancement Mode MOSFET MIRACLE POWER MS4004D with High Drain Current and Low Gate Charge
Product Overview The MS4004D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced shielded-gate technology, offering excellent RDS(ON) and low gate charge. This MOSFET is guaranteed for 100% EAS and is suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Advanced Shielded
Power Control Using Miracle Power MU4005X N Channel Enhancement Mode MOSFET With 40V Drain Source Voltage And Low RDS
Product Overview The MU4005X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 40V drain-source voltage, 50A continuous drain current, and a low typical on-resistance of 4.7m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteeing 100% EAS. It is suitable for applications such as load switches, PWM applications, and power management. Product Attributes Brand: Miracle
High Avalanche Voltage N Channel Power MOSFET Minos MDT30N06L with Low Gate Charge and Excellent RDS
Product OverviewThe MDT30N06L is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design, characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.Product
Enhanced Power MOSFET Minos MPT052N10P Featuring Low Conduction Loss and High Avalanche Ruggedness
Product DescriptionThe MPT052N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal device for synchronous rectification and high-speed switching applications, offering low on-resistance, fast switching speeds, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. The product is RoHS
High Current Silicon MOSFET Minos MD70N30 Suitable for General Purpose and High Frequency Switching
Product OverviewThe MD70N30 is a silicon N-Channel Enhanced MOSFET designed for high-frequency switching applications. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy, making it suitable for SMPS, high-speed switching, and general-purpose applications. This RoHS-compliant product is available in a TO-3P package.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaCertifications: RoHSTechnical SpecificationsParameterValueUnitsC
Lateral DMOS transistor MICROCHIP LND150N3 G with integral source drain diode and drive requirements
Product OverviewThe LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS technology. It features ESD protection on the gate and is ideal for high voltage applications such as normally-on switches, precision constant current sources, voltage ramp generation, and amplification. Key advantages include freedom from secondary breakdown, low power drive requirements, ease of paralleling, excellent thermal stability, an integral
