Single FETs, MOSFETs

Product OverviewThe MD24N50 is a silicon N-Channel Enhanced Power MOSFET designed for high-performance applications. Leveraging advanced MOSFET technology, it offers reduced conduction losses, improved switching performance, and enhanced avalanche energy. This transistor is an ideal choice for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.Product AttributesBrand: MNS (www.mns-kx.com)Material: Silicon N-ChannelCertifications: RoHS

Product Overview The MU3004X is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered for high-frequency switching and synchronous applications, this MOSFET offers reliable and rugged performance with a fast switching speed. It is suitable for DC/DC converters and other demanding applications. The device is available as a Green Device and is 100% EAS Guaranteed. Product Attributes Brand: Miracle Technology Co., Ltd. Product Type: P-Channel

Product Overview The MS0002Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. Engineered with Miracle Technology, this MOSFET offers a 100V drain-source voltage and a continuous drain current of 91A at 25C, with a low on-resistance of 6.5m (typ.) at VGS = 10V. It is designed for high-frequency switching and synchronous applications, including DC/DC converters. Key features include reliable and rugged construction, fast switching speed, and a green

Product OverviewThe MDT40N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with

Product Overview The MPD05N50C is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 500V breakdown voltage, a continuous drain current of 3A, and a low on-resistance of 2.8 (typ.) at VGS = 10V. This MOSFET offers low Crss, fast switching speeds, and is 100% avalanche tested, making it suitable for adaptors, standby power supplies, switching power supplies, and LED power applications. Product Attributes

Product Overview The NVT015N10C is an N-Channel Enhancement Mode Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. It features NH's Advanced Planar DMOS Technology, offering low Rds(on) for reduced on-state loss and high EAS for enhanced reliability. This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as AC/DC converters, adaptors and chargers, PC power supplies, and LED drives and lighting. It is 100% UIS tested

Product Overview The MU3012D is an N-Channel Enhancement Mode MOSFET featuring Miracle Technology. It offers a 30V drain-source voltage and 100A continuous drain current, with a typical RDS(ON) of 2.9m at VGS = 10V. This MOSFET utilizes advanced trench technology for excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management scenarios. Product Attributes Brand: Miracle Technology Co., Ltd. Technology: Advanced Trench

Product Overview The MPF20N50 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-performance switching applications. It features a 500V breakdown voltage, a continuous drain current of 20A, and a low on-resistance of 0.24 (typ.) at VGS = 10V. With fast switching characteristics and 100% avalanche tested, this MOSFET is suitable for adaptors, standby power supplies, switching power supplies, and PFC applications. Product Attributes Brand: Miracle

Product OverviewThis N-Channel MOSFET is manufactured using MDD's advanced Power Trench technology, optimized for minimal on-state resistance and superior switching performance with a best-in-class soft body diode. It is designed for power management applications in telecom and industrial automation, including motor drives, uninterruptible power supplies, and DC/DC & AC/DC (SR) sub-systems. Key features include extremely low reverse recovery charge, a maximum RDS(on) of 7m at

Product Overview The MJF15N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is rated for 800V and 15A with a typical on-resistance of 0.25 at VGS = 10V. This device is 100% avalanche tested and is suitable for applications such as single-ended flyback or two-transistor forward topologies, including PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting. Product

Product OverviewThe MPG180N03S is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, providing fast switching, low on-resistance, and high avalanche ruggedness.Product AttributesBrand: MNS (derived from www.mns-kx.com)Certifications: RoHSTechnical SpecificationsParameterConditionsMin.Typ.Max

Product Overview The MPC05N50/NPC830 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-voltage applications, it features a 500V drain-source voltage rating and a continuous drain current of 5A at 25C. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for charger and standby power applications. Product Attributes Brand: Miracle Technology Co., Ltd. Product Line: MPC/NPC Series Channel Type: N

Product OverviewThe MEM2301XG Series is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. This device is particularly suited for low voltage applications, offering low power dissipation in a subminiature surface mount package (SOT23). Key features include -20V/-2.8A rating, low RDS(ON) values, and a high-density cell design for ultra-low on-resistance.Product AttributesBrand: MicroneOrigin:

Product OverviewThe MPF7N65 is a Silicon N-Channel Power MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It offers fast switching and improved dv/dt capability, making it suitable for a wide range of applications including Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and Power Factor Correction (PFC).Product AttributesBrand: MNS (Shenzhen Minos Technology Co., Ltd.)Origin: ChinaTechnical SpecificationsParamete

Product Overview The MJD08N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology for efficient and reliable performance. It offers 800V breakdown voltage, 8A continuous drain current, and a low on-resistance of 0.62 (Typ.) at VGS = 10V. This MOSFET is designed for easy gate switching control and is 100% avalanche tested, making it suitable for demanding applications such as PC power supplies, PD adaptors, LCD &

Product Overview The MJF08N80 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient and easy-to-control gate switching. Rated at 800V and 8A with a low typical on-resistance of 0.62 at VGS = 10V, this MOSFET is 100% avalanche tested. It is designed for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and single-ended flyback or two-transistor forward topologies. Product

Product OverviewThe MEM2307M3G is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology. It is designed to minimize on-state resistance and is particularly suited for low voltage applications, offering low power dissipation in a very small outline surface mount package (SOT23-3). Key applications include power management, load switching, and battery protection.Product AttributesBrand: MicroneOrigin: www.microne.com.cnPackage

Product Overview The MPF12N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 12A at 25C, and a low on-resistance (RDS(ON)) of 0.80 (Max.) at VGS = 10V. Key characteristics include low Crss, fast switching speeds, and 100% avalanche tested reliability. This MOSFET is suitable for a range of applications including adapters, LCD panel power

Product OverviewThe IRF5210 is a Silicon P-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers. Key features include low ON resistance, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.Product AttributesBrand: MNS-KXOrigin: Shenzhen, ChinaMaterial: SiliconCertifications: Not specifiedTechnical Specification

Product Overview The MPF07N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for power switch circuits in adaptors and chargers. It features a 700V drain-source voltage, a continuous drain current of 7A, and a typical on-resistance of 1.18 at VGS = 10V. This MOSFET offers low gate charge, fast switching speeds, and is 100% tested for single pulse avalanche energy, making it suitable for efficient power conversion applications. Product Attributes