Single Bipolar Transistors
NPN Silicon Epitaxial Planar Transistor CBI MMUN2232 Featuring Integrated Resistors for Drive Circuits
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors, offering a compact solution for various electronic designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Material: Silicon Epitaxial Planar Package: SOT-23 Plastic Package Technical Specifications Model R1 (K) R2 (K) Collector Base Voltage (VCBO) Collector Emitter Voltage
NPN Plastic Encapsulated Transistor CBI S9018W for AM FM Amplifier and Local Oscillator Applications
Product Overview This NPN plastic-encapsulated transistor is designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It offers a high current gain and a typical transition frequency (fT) of 1.1 GHz. The device is marked with 'J8'. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: Transistor (NPN) Encapsulation: Plastic Technical Specifications Symbol Parameter Test Conditions Value Units Maximum Ratings (TA=25 unless
General purpose PNP transistor CBI SS8550 in SOT23 plastic surface mounted package with 3 leads
Product Overview The SS8550 is a PNP transistor, complementary to the SS8050. It is designed for general-purpose applications and is housed in a SOT-23 plastic surface-mounted package with 3 leads. The marking for this transistor is 'Y2'. Product Attributes Type: PNP Transistor Marking: Y2 Package: SOT-23 Package Type: Plastic surface mounted package; 3 leads Complementary to: SS8050 Technical Specifications Parameter Symbol Test Conditions Min Max Units MAXIMUM RATINGS (TA
General Purpose NPN Transistor CBI SS8050 with SOT89 Package and 0.5 Watt Collector Power Dissipation
Product Overview The SS8050 is a plastic-encapsulated NPN transistor designed for general-purpose applications. It serves as a compliment to the SS8550 transistor. Key features include a continuous collector current of 1.5 A and a collector power dissipation of 0.5 W. This transistor is suitable for various electronic circuits requiring amplification and switching functionalities. Product Attributes Type: NPN Transistor Package: SOT-89 Marking: Y1 Complementary Device: SS8550
Dual PNP Transistor SOT363 Package Featuring CBI BC857DW Ideal for Compact Electronic Circuits
Product Overview This product features two PNP transistors integrated into a single SOT-363 package. This dual transistor design offers advantages such as reducing component count and saving board space, with no mutual interference between the transistors. It is suitable for applications requiring PNP transistor functionality in a compact form factor. Product Attributes Package Type: SOT-363 Transistor Type: PNP + PNP (Dual Transistor) Marking: 3F Origin: Heyuan China Base
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits
Product Overview This NPN transistor, the MMBT3906, is an epitaxial planar die construction device designed for general-purpose applications. It offers complementary functionality to PNP transistors and is recommended for various electronic circuits. The transistor is housed in a compact SOT-23 plastic surface-mounted package with 3 leads. Product Attributes Complementary Type: PNP Transistor MMBT3906 Construction: Epitaxial Planar Die Marking: 1AM Package: SOT-23 (Plastic
General Purpose NPN Transistor CBI MMBTSC2412 with Low Collector Output Capacitance and Plastic SOT23 Package
Product Overview The MMBTSC2412 is an NPN transistor designed for general-purpose applications. It features low collector output capacitance (Cob) of 2.0 pF (Typ), making it suitable for various electronic circuits. This transistor is housed in a SOT-23 package. Product Attributes Marking: BR Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test Conditions Minimum Typical Maximum Units MAXIMUM RATINGS (TA=25 unless
NPN Silicon Epitaxial Planar Transistor CBI MMBT3904W Suitable for Switching Amplifier Applications
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It offers a range of DC current gain values across different collector currents and exhibits breakdown voltages suitable for general-purpose use. The device is available in a SOT-323 package, making it suitable for compact electronic designs. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Marking Code: 1E Origin: Heyuan China Base Electronics
Low noise amplifier transistor CBI MMBTSC3356-3G NPN silicon epitaxial planar type with SOT23 package
Product Overview The 1 MMBTSC3356 is an NPN silicon epitaxial planar transistor designed for low-noise amplifier applications in the VHF, UHF, and CATV bands. It is available in three DC current gain groups (Q, R, and S) and comes in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: NPN Silicon Epitaxial Planar Technical Specifications Parameter Symbol Value Unit Absolute Maximum Ratings (Ta = 25 C) Collector Base Voltage VCBO
Surface Mount NPN Transistor CBI S9014W Complementary To S9015W Suitable For Electronic Circuits
Product Overview This NPN transistor, designed for small surface mount applications, is complementary to the S9015W. It offers reliable performance with key electrical characteristics suitable for various electronic circuits. Product Attributes Complementary To: S9015W Package Type: SOT-323 Plastic-Encapsulate Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Maximum Ratings (Ta=25 unless
General purpose PNP transistor CBI S8550 with 0.5A collector current and plastic SOT23 package
Product Overview The S8550 is a PNP transistor designed for general-purpose applications. It is a complementary part to the S8050 transistor, offering a collector current of up to 0.5A. This transistor is housed in a plastic surface-mounted SOT-23 package with 3 leads, suitable for various electronic circuits. Product Attributes Marking: 2TY Package Type: SOT-23 Package Material: Plastic Lead Count: 3 Type: PNP Transistor Technical Specifications Symbol Parameter Conditions
PNP Transistor SOT523 Package Featuring CBI S8550 Suitable for Electronic Circuit Applications
Product Overview The S8550T is a PNP bipolar junction transistor (BJT) designed as a complementary component to the S8050T. It features a continuous collector current (IC) of 0.5A and is suitable for various electronic applications. The transistor is marked with '2TY' and is available in a SOT-523 package with clearly defined Base, Emitter, and Collector pins. Product Attributes Type: PNP Transistor Marking: 2TY Package: SOT-523 Complementary to: S8050T Technical Specificatio
Low Voltage High Current Plastic Encapsulated Transistor CBI BCX56-16U SOT-89 Package for Electronics
Product Overview The BCX54, BCX55, and BCX56 series are NPN transistors designed for low voltage and high current applications. They serve as ideal driver stages for audio amplifiers. These transistors are PNP complements to the BCX51, BCX52, and BCX53 series. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Plastic-Encapsulated Transistors Package: SOT-89 Technical Specifications Model Parameter Test Conditions Min Typ Max Unit BCX54
Medium Power Amplifier Transistor Suitable For Electronics CBI 2SD1766U NPN Silicon Epitaxial Planar
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for medium power amplification applications. It offers reliable performance with defined electrical characteristics and is suitable for various electronic circuits requiring amplification. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Function: Medium power amplifier Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Value Unit Notes
High DC Current Gain NPN Darlington Transistor CBI BCV27 in SOT23 Package for Electronic Performance
Product Overview NPN Darlington Transistors designed for preamplifier input applications. These transistors are available in a SOT-23 plastic package and offer high DC current gain. Product Attributes Package Type: SOT-23 Plastic Package Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Model Min. Typ. Max. Unit DC Current Gain hFE BCV27 (VCE = 5 V, IC = 1 mA) 4000 - - - BCV47 (VCE = 5 V, IC = 1 mA) 2000 - - - BCV27 (VCE = 5
SOT89 3L package PNP transistor CBI BCX53-16U for medium power low voltage high current applications
Product Overview The BCX51U, BCX52U, and BCX53U series are PNP transistors in a SOT-89-3L package, designed for low voltage and high current applications. These medium power, general-purpose transistors are suitable for driver stages of audio amplifiers. They are plastic-encapsulated and feature NPN complements to the BCX54U, BCX55U, and BCX56U series. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89-3L Transistor Type: PNP
NPN Transistor SOT23 Package Suitable for Switching and AF Amplifier Applications CBI BC848A Component
Product Overview This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. It offers reliable performance across various electrical characteristics, suitable for diverse electronic designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions BC846 BC847 BC848 Unit MAXIMUM RATINGS (TA=25 unless
Epitaxial planar die transistor CBI MMDT3904V KAP suitable for amplification and switching circuits
Product Overview This component features an epitaxial planar die construction, making it ideal for low power amplification and switching applications. It offers reliable performance with defined voltage and current ratings, suitable for various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Construction: Epitaxial planar die Technical Specifications Parameter Conditions Value Unit Collector-Base Voltage (V(BR)CBO) IC=10 A, IE
high voltage PNP transistor CBI MMBTA92 encapsulated in SOT23 plastic package for electronic designs
Product Overview The MMBTA92 is a high-voltage PNP transistor encapsulated in a SOT-23 plastic package. It is designed for applications requiring high voltage handling capabilities. Product Attributes Type: Transistor (PNP) Package: SOT-23 Plastic-Encapsulate Marking: 2D Technical Specifications Parameter Symbol Test Conditions Min Max Unit Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) -300 V Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) -300 V
Independent NPN NPN Silicon Epitaxial Planar Transistor CBI MMDT3052DW for Low Frequency Amplification
Product Overview The MMDT3052DW is a Silicon Epitaxial Planar Transistor featuring independent NPN+NPN transistor elements. It is designed for low-frequency amplification applications. Product Attributes Type: NPN+NPN Silicon Epitaxial Planar Transistor Marking: 5G Technical Specifications Parameter Symbol Value Unit Absolute Maximum Ratings (Ta = 25) Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA
