Single Bipolar Transistors
NPN and PNP Transistor Pair CBI MMDT4413DW Plastic Encapsulated 4401 4403 for Switching Applications
Product Overview This product features a complementary pair of plastic-encapsulated transistors, including one 4401-type NPN and one 4403-type PNP transistor. Designed with epitaxial planar die construction, these transistors are ideal for low-power amplification and switching applications. They are manufactured by Heyuan China Base Electronics Technology Co., Ltd. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Construction:
High Voltage NPN Silicon Planar Transistor CBI FMMT458 Featuring 400V VCEO and 225mA Collector Current
Product Overview This NPN Silicon Planar High Voltage Transistor is designed for high voltage applications. It offers robust performance with a 400V VCEO rating and a continuous collector current of 225 mA. The transistor is suitable for various electronic circuits requiring reliable high-voltage switching and amplification. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Planar High Voltage Transistor Technical Specifications
PNP transistor small surface mount package medium power amplification switching CBI MMBT5401W device
Product Overview This PNP plastic-encapsulated transistor is designed as a complementary component to the MMBT5551W. Featuring a small surface mount package, it is ideal for medium power amplification and switching applications. The transistor is marked with 'K4M'. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT323 Transistor Type: PNP Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit MAXIMUM RATINGS (Ta
General purpose low frequency power amplifier transistor CBI 2SD669U plastic encapsulated package type
Product Overview This is a low-frequency power amplifier, offered as a complementary pair with the 2SB649. It is designed for general-purpose amplification applications. The transistor is housed in a plastic-encapsulated package. Product Attributes Complementary Pair with 2SB649 Marking: D669 Package Type: Plastic-Encapsulated Transistor Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit
SOT23 Plastic Package PNP Transistor CBI BC857B Ideal for Switching and Amplifier Electronic Designs
Product Overview The BC856BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package, offering a compact solution for various electronic designs. Product Attributes Package Type: SOT-23 Plastic Package Technical Specifications Parameter Symbol BC856 BC857, BC860 BC858, BC859 Unit Absolute Maximum Ratings (Ta = 25 ℃) Collector Base Voltage -VCBO 80 50 30 V Collector Emitter
Electronic switching transistor CBI MMBT2222A NPN epitaxial planar die type in compact SOT23 package
Product Overview The MMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A). This transistor is housed in a SOT-23 package, a plastic surface-mounted package with 3 leads. It is suitable for various electronic applications requiring reliable switching and amplification. Product Attributes Type: NPN Transistor Construction: Epitaxial planar die Complementary Type: MMBT2907A (PNP) Package: SOT-23 (Plastic
NPN Transistor CBI S9013 with SOT23 Package Offering Performance and Excellent hFE Linearity
Product Overview The S9013 is an NPN transistor designed for general-purpose applications. It is complementary to the S9012 transistor and offers excellent hFE linearity. This transistor is housed in a plastic surface-mounted SOT-23 package with 3 leads. Product Attributes Complementary to S9012 Excellent hFE linearity MARKING: J3 Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Symbol Parameter Test Conditions MIN TYP MAX Units MAXIMUM
Electronic NPN Transistor with 05A Collector Current and 25V Collector Emitter Voltage CBI S8050W SOT323 Package
Product Overview This NPN transistor is a complementary component to the S8550, designed for applications requiring a collector current of up to 0.5A. It offers a collector-emitter voltage of 25V and a collector dissipation of 0.3W. The transistor is marked with 'J3Y' and is housed in an SOT-323 package. It is suitable for various electronic circuits where reliable NPN amplification or switching is needed. Product Attributes Marking: J3Y Complimentary to: S8550 Origin: Heyuan
Plastic Encapsulated Transistor CBI 2SC4177 Suitable for High Voltage Applications and Amplification
Product Overview This NPN transistor is designed for general-purpose amplification and offers high DC current gain. It is complementary to the 2SA1611 and is suitable for high voltage applications. Key features include high voltage ratings and a wide DC current gain range, with specific hFE ranks available for tailored performance. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Plastic-Encapsulated Transistors Complementary to:
NPN transistor CBI MMBT5551 for medium power switching and amplification applications in SOT23 package
Product Overview The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It serves as a complementary component to the MMBT5401 transistor. Product Attributes Marking: G1 Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter
PNP Silicon Epitaxial Transistor CBI BC857C in SOT23 Plastic Package for Switching Amplifier Circuits
Product Overview This product is a PNP Silicon Epitaxial Transistor designed for switching and amplifier applications. It is housed in a SOT-23 plastic package. The transistors offer various performance levels across different models, suitable for a range of electronic circuits requiring precise control and amplification. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Technical Specifications Parameter Symbol
PNP Silicon Epitaxial Transistor CBI BC856B SOT23 Package Suitable for Switching Amplifier Circuits
Product Overview The BC856...BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a compact SOT-23 plastic package, making them suitable for various electronic circuits where space efficiency is crucial. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: PNP Silicon Epitaxial Applications: Switching and Amplifier Technical Specifications Parameter Symbol BC856 BC857, BC860
SOT23 Package PNP Silicon Epitaxial Transistor CBI BC858C Ideal for Switching and Amplifier Circuits
Product Overview This document details PNP Silicon Epitaxial Transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package. They offer a range of models with varying voltage and current gain characteristics, suitable for diverse electronic circuit designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Material: Silicon Epitaxial Transistor Technical
NPN High Voltage Transistor CBI FCX458 Featuring 400V Collector Emitter Voltage for Industrial Electronics
Product Overview This NPN Silicon Planar High Voltage Transistor is designed for demanding applications requiring high voltage capabilities. It features a Collector-Emitter Voltage (VCEO) of 400V and a continuous collector current (IC) of up to 225mA. With its robust design and specified operating temperature range, this transistor is suitable for various industrial and electronic circuits where reliable high-voltage switching and amplification are essential. Product
Switching Transistor CBI MMBT4403 PNP Type with Stable Electrical Parameters and SOT23 Package
Product Overview This PNP transistor is designed for switching applications. It offers reliable performance with key electrical characteristics such as breakdown voltages and DC current gain. The device is housed in a compact SOT-23 package, making it suitable for surface mounting in various electronic circuits. Product Attributes Marking: 2T Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical
CBI BC80725W SOT323 Plastic Encapsulated PNP Transistor with Collector Emitter Breakdown Voltage 45V
Product Overview The SOT-323 Plastic-Encapsulated Transistor is an epitaxial planar die transistor ideally suited for automatic insertion. It offers complementary functionality to the BC817W. Key electrical characteristics include a collector-emitter breakdown voltage of -45V and a DC current gain (hFE) ranging from 100 to 600 depending on the specific rank. This transistor is designed for various electronic applications requiring reliable PNP transistor performance. Product
PNP Transistor CBI 2N2907AU Designed for General Purpose Switching and Audio Frequency Amplification
Product Overview This PNP Silicon Epitaxial Planar Transistor is designed for switching and AF amplifier applications. It is available in different groups based on its DC current gain, offering versatility for various electronic designs. The transistor is suitable for general-purpose amplification and switching tasks. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Value Unit Conditions Absolute Maximum
Small size NPN transistor CBI MMBT3904T with excellent current gain and breakdown voltage parameters
Product Overview The MMBT3904T is an NPN transistor in a SOT-523 plastic-encapsulated package. It serves as a complementary component to the MMBT3906T and is designed for applications requiring small package size. This transistor offers various electrical characteristics including breakdown voltages, cut-off currents, DC current gain (hFE) across different collector currents, saturation voltages, and transition frequency, making it suitable for general-purpose electronic
Plastic Encapsulated Transistor CBI 2N5401U Suitable for High Voltage Switching Applications
Product Overview The Plastic-Encapsulate Transistor (PNP) is designed for switching and amplification in high-voltage applications, particularly within telephony systems. It offers low current capabilities with a maximum of 500mA and high voltage handling up to 160V. Key features include its suitability for high-voltage scenarios and its low current characteristics. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89 Technical
NPN Silicon Epitaxial Transistor Model CBI BC848C in SOT23 Package for Switching Amplifier Functions
Product Overview This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. Complementary PNP transistors like the BC856...BC860 are recommended for specific applications. The transistor is housed in a SOT-23 Plastic Package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Transistor Package: SOT-23 Plastic Package Technical Specifications Parameter Symbol Model Value Units Collector
