Single Bipolar Transistors
CBI S8050 0.8A NPN transistor with 0.8A continuous collector current and compact SOT23 surface mount
Product Overview This NPN transistor is designed for general-purpose applications and is complementary to the S8550. It offers a continuous collector current of 0.8A and a collector dissipation of 0.3W. The device is housed in a plastic surface-mounted SOT-23 package. Product Attributes Marking: J3Y Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units Collector-Base Voltage
Dual PNP Transistor in Plastic Encapsulated SOT363 Package CBI MMDT4403DW for Amplification Switching
Product Overview This product features epitaxial planar die construction, making it ideal for low power amplification and switching applications. It is a dual PNP+PNP transistor housed in a plastic-encapsulated SOT-363 package. Product Attributes Construction: Epitaxial Planar Die Package Type: SOT-363 Encapsulation: Plastic Type: Dual Transistor (PNP+PNP) Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min
NPN transistor CBI S8050 designed for switching and amplification in electronic circuit applications
Product Overview The S8050T is an NPN transistor designed for general-purpose applications. It is a complementary part to the S8550T, offering a continuous collector current of 0.5A. This transistor is suitable for various electronic circuits requiring amplification or switching functions. Product Attributes Marking: J3Y Complementary to: S8550T Technical Specifications Parameter Symbol Test Conditions Min Typ Max Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector
Medium Power Amplification and Switching Dual Transistor CBI MMDT5551DW NPN NPN Epitaxial Planar Die
Product Overview This is a DUAL TRANSISTOR (NPN+NPN) with Epitaxial Planar Die Construction. A complementary PNP type (MMDT5401) is available. It is ideal for medium power amplification and switching applications. Product Attributes Brand: CJ-ELE Model: MMDT5551DW Construction: Epitaxial Planar Die Type: Dual Transistor (NPN+NPN) Complementary PNP Type Available: MMDT5401 Technical Specifications Parameter Symbol Condition Min Max Unit Collector-Base Voltage V(BR)CBO IC=100A,
Stable NPN Transistor CBI C945W Featuring Low Noise and Precise hFE Linearity for Electronic Designs
Product Overview This NPN transistor, complementary to the A733W, offers excellent hFE linearity and low noise characteristics. It is designed for various applications requiring reliable performance. Product Attributes Marking: CR Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min Typ Max Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50
Durable PNP transistor CBI 2SA1013U with high voltage rating and continuous collector current support
Product Overview This PNP transistor is designed for high voltage applications and offers a large continuous collector current capability. It is suitable for various electronic circuits requiring robust performance. Product Attributes Marking: 1013 Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: Plastic-Encapsulate Transistors (SOT-89) Technical Specifications Parameter Symbol Test Conditions Value Unit MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Surface mount PNP transistor CBI SS8550 in SOT23 plastic package for electronic circuit applications
Product Overview The SS8550 is a PNP transistor designed as a complimentary part to the SS8050. It is housed in a SOT-23 plastic surface-mounted package with 3 leads. This transistor is suitable for various electronic applications requiring a PNP type component. Product Attributes Marking: Y2 Package: SOT-23 Package Type: Plastic surface mounted package; 3 leads Transistor Type: PNP Technical Specifications Parameter Symbol Test Conditions Min Max Units Collector-Base Voltage
PNP transistor CBI MMBT3906W with 150 degree junction temperature and 40 volt collector base voltage
Product Overview The MMBT3906W is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers reliable performance with specified characteristics for DC current gain, cutoff currents, and breakdown voltages. Product Attributes Marking Code: 3N Technical Specifications Parameter Symbol Value Unit Absolute Maximum Ratings (Ta = 25 C) Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V
PNP Transistor CBI S9012T Designed for Electronic Applications Requiring Stable hFE Linearity
Product Overview This PNP transistor is designed as a complementary component to the S9013T, offering excellent hFE linearity. It is suitable for various electronic applications requiring reliable transistor performance. Product Attributes MARKING: 2T1 Type: TRANSISTOR (PNP) Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO
Compact SOT363 package dual NPN transistor CBI MMDT4401DW ideal for electronic circuit amplification
Product Overview This NPN epitaxial planar die construction transistor is ideal for low power amplification and switching applications. It is a dual transistor package featuring two NPN transistors in a single SOT-363 package, designed for efficient performance in various electronic circuits. Product Attributes Construction: Epitaxial Planar Die Package Type: SOT-363 Transistor Type: NPN + NPN (Dual Transistor) Encapsulation: Plastic Origin: Heyuan China Base Electronics
General purpose PNP transistor CBI BC807-25 designed for performance in automated electronic assembly
Product Overview A general-purpose PNP bipolar transistor ideally suited for automatic insertion. It features an axial planar die construction and has a complementary NPN type available (BC817). This transistor is designed for various electronic applications requiring reliable performance and ease of integration into automated manufacturing processes. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Technical Specifications
Dual transistor NPN NPN type CBI EMX1 featuring SOT-563 package for compact and interference free operation
Product Overview The SOT-563 DUAL TRANSISTOR (NPN+NPN) is a plastic-encapsulated device featuring two independent 2SC2412K chips within a single SOT-563 package. This configuration eliminates interference between transistor elements and allows for mounting with standard SOT-563 automatic mounting machines, significantly reducing mounting costs and required board area. It is designed for applications requiring compact dual NPN transistor solutions. Product Attributes Type:
High reliability PNP transistor CBI S8550 with 0.5A collector current and 0.2W power dissipation
Product Overview The S8550T is a PNP bipolar junction transistor designed as a complementary part to the S8050T. It features a continuous collector current of 0.5A and a collector power dissipation of 0.2W. This transistor is suitable for applications requiring a continuous collector current of up to 0.5A and is marked with '2TY'. Product Attributes Type: PNP Transistor Marking: 2TY Complementary to: S8050T Package: SOT-523 Technical Specifications Symbol Parameter Test
Stable 5 volt output voltage regulator CBI 78L05 suitable for surface mount electronic applications
Product Overview This product is a voltage regulator designed for stable output voltage. It operates within a specified input voltage range and offers precise regulation under various load and line conditions. Its compact SOT-23 package makes it suitable for surface-mounted applications. Product Attributes Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Value Unit Test Conditions Min Typ Max ABSOLUTE MAXIMUM RATINGS Input
Medium power NPN transistor CBI BCX53 suitable for driver stages in audio amplifiers and general purpose
Product Overview The BCX51, BCX52, and BCX53 series are NPN plastic-encapsulated transistors designed for low voltage and high current applications. They serve as medium power general-purpose devices and are suitable for driver stages in audio amplifiers. These transistors are NPN complements to the BCX54, BCX55, and BCX56 series. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89 Technical Specifications Model VCBO (V) VCEO (V)
General purpose NPN transistor CBI SS8050 with SOT23 package and 1.5 amp collector current rating
Product Overview The SS8050 is an NPN transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. This device is housed in a SOT-23 plastic surface-mounted package with 3 leads. Product Attributes Marking: Y1 Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector
Compact Dual PNP Transistor CBI MMDT5401DW for Medium Power Amplification and Switching Applications
Product Overview This dual PNP transistor, complementary to the MMDT5551DW, is designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for space-constrained designs. The device offers robust performance with high breakdown voltages and controlled current gain. Product Attributes Type: Dual Transistor (PNP+PNP) Package: SOT-363 Plastic-Encapsulate Transistors Complementary to: MMDT5551DW Origin: Heyuan
Low Frequency NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKR Featuring SOT89 Package Design
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for low-frequency applications. It features a SOT-89 package and is classified into hFE ranks P, Q, and R, with corresponding marking codes DKP, DKQ, and DKR. The transistor offers robust performance with specified absolute maximum ratings and electrical characteristics at 25C. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-89 Origin: Heyuan China Base Electronics
Electronic switching transistor CBI BC857AW NPN silicon epitaxial planar for general purpose circuits
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, suitable for a wide range of electronic circuits. The transistors are manufactured by Heyuan China Base Electronics Technology Co., Ltd. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Planar Transistor Technical Specifications
PNP transistor CBI MMBT3906 featuring epitaxial planar die construction and SOT23 three lead package
Product Overview The MMBT3906 is a PNP Epitaxial Planar Die Construction transistor. It is the complementary type to the NPN transistor MMBT3904. Designed for general-purpose applications, this transistor is supplied in a SOT-23 plastic surface-mounted package with 3 leads. Product Attributes Type: PNP Transistor Construction: Epitaxial Planar Die Package: SOT-23 (Plastic surface mounted package; 3 leads) Complementary Type: MMBT3904 (NPN) Technical Specifications Symbol
