Single Bipolar Transistors
PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications
Product Overview These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Material: Plastic-Encapsulate Type: Transistor (PNP) Package Type: SOT-323 Technical Specifications Model Parameter Value Unit Test Conditions BC856W Collector-Base Voltage
High Voltage NPN Silicon Transistor CBI MMBT13001 in SOT23 Package for Amplification and Switching
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general-purpose applications. It features a SOT-23 plastic package, making it suitable for surface mounting. The transistor offers robust performance with high breakdown voltages and controlled current gain, ideal for switching and amplification circuits in various electronic devices. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-23 Plastic Package Origin: Heyuan
SOT23 Package PNP Silicon Transistor CBI MMBT2907A for Switching and AF Amplifier Electronic Circuit
Product Overview The MMBT2907 / MMBT2907A is a PNP silicon epitaxial planar transistor designed for switching and AF amplifier applications. This transistor is categorized into groups based on its DC current gain. It is housed in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Transistor Type: PNP Silicon Epitaxial Planar Application: Switching and AF amplifier Technical Specifications Parameter Symbol MMBT2907 MMBT2907A Unit Absolute Maximum Ratings
High reliability transistor CBI MMBT5551T for medium power amplification and switching applications
Product Overview The MMBT5551T is a complementary NPN transistor designed for medium power amplification and switching applications. It offers excellent performance characteristics, making it an ideal choice for various electronic circuits requiring reliable amplification and switching capabilities. Product Attributes MARKING: G1 Technical Specifications Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V Collector
NPN Silicon Epitaxial Transistor CBI BC850B SOT23 Package Ideal for Switching Amplifier Circuits
Product Overview The BC846 to BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. Complementary PNP transistors in the BC856 to BC860 series are recommended for paired applications. These transistors are housed in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: NPN Silicon Epitaxial Transistor Complementary Type: PNP transistors BC856...BC860 Technical Specifications Parameter
High Gain NPN Transistor CBI 2SC1623 with Plastic Surface Mount Package and 50 Volt Breakdown Voltage
Product Overview The 2SC1623 is an NPN transistor featuring high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V). It is designed for applications requiring efficient amplification and switching. Product Attributes Marking: L6 Package Type: SOT-23 Package Outline: Plastic surface mounted package; 3 leads Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V Collector-Emitter
PNP Silicon Epitaxial Transistor CBI BC856AT Designed for Amplifier and Switching Electronic Circuit
Product Overview This PNP Silicon Epitaxial Transistor is designed for switching and amplifier applications. It offers a range of voltage and current ratings suitable for various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Material: Silicon Epitaxial Type: PNP Transistor Technical Specifications Parameter Symbol Model Value Unit Collector Base Voltage (Absolute Maximum Rating) -VCBO BC856T 80 V BC857T, BC860T 50 V BC858T,
Dual transistor PNP PNP CBI MMDT3906DW epitaxial planar die in SOT 363 package suitable for circuits
Product Overview This is a SOT-363 plastic-encapsulated dual transistor (PNP+PNP) designed for low power amplification and switching applications. It features epitaxial planar die construction and is suitable for various electronic circuits requiring PNP transistor functionality. Product Attributes Package Type: SOT-363 Construction: Epitaxial planar die Type: Dual Transistor (PNP+PNP) Marking: K3N Technical Specifications Parameter Symbol Test Conditions Value Units Maximum
General purpose NPN transistor CBI C945 with low noise and excellent hFE linearity in SOT23 package
Product Overview The C945 is an NPN transistor designed for general-purpose applications. It features excellent hFE linearity and low noise characteristics, making it suitable for various electronic circuits. This transistor is complementary to the A733 and is supplied in a SOT-23 package. Product Attributes Marking: CR Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units MAXIMUM RATINGS (TA=25
Compact SOT23 PNP transistor CBI S9015 designed for general purpose amplification and switching circuits
Product Overview The S9015 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It serves as a complementary device to the S9014 transistor and is housed in a compact SOT-23 package. This transistor offers a maximum collector current of 0.1A and a collector power dissipation of 0.2W. Product Attributes Marking: M6 Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter
High Voltage NPN Transistor CBI FMMT493 Featuring Compact SOT23 Plastic Encapsulation for Electronics
Product Overview The FMMT493 is an NPN transistor designed for various electronic applications. It offers complementary pairing with the FMMT593. Key features include a high collector-emitter voltage rating and a compact SOT-23 plastic-encapsulate package, making it suitable for surface mounting. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: Transistor (NPN) Complementary Type: FMMT593 Marking: 493 Package: SOT-23 Plastic-Encapsulate
PNP Transistor CBI SS8550W Featuring Maximum Collector Current 1.5A and Collector Emitter Voltage 25V
Product Overview This PNP transistor is a complementary component to the SS8050W, designed for various electronic applications. It offers a maximum collector current of -1.5 A and a collector power dissipation of 0.2 W. The device is suitable for operation within a junction temperature of 150 . Product Attributes Type: PNP Transistor Marking: Y2 Complementary to: SS8050W Technical Specifications Parameter Symbol Test Conditions Min Max Units Collector-Base Voltage VCBO (TA=25
CBI S8550 0.8A PNP transistor offering 0.8A collector current and housed in SOT23 package for general
Product Overview This PNP transistor, complimentary to the S8050, is designed for general-purpose applications. It offers a continuous collector current of 0.8A and a collector power dissipation of 0.3W. The transistor is housed in a SOT-23 package, making it suitable for surface mounting. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Technical Specifications Parameter Symbol Test Conditions Min Max Units Collector-Base
Plastic Encapsulated Dual Transistor Package Featuring CBI BC846PN NPN and PNP Transistors in SOT363
Product Overview This product is a plastic-encapsulated dual transistor package containing isolated NPN and PNP transistors. It is designed for electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is supplied in a SOT-363 package. Product Attributes Brand: CJ-elec (implied by website reference) Origin: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Model
Versatile plastic surface mounted NPN transistor CBI BC847A suitable for automatic insertion tasks
Product Overview This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. It offers reliable performance across various electrical characteristics, including breakdown voltages, current gains, and saturation voltages, within the SOT-23 package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Material: Plastic surface mounted package Pin
Plastic Encapsulated Dual Transistor Featuring CBI MMBT5451DW NPN and PNP for Amplification Switching
Product Overview This product features a plastic-encapsulated dual transistor, combining one NPN (5551) and one PNP (5401) transistor in a single package. It is constructed with an epitaxial planar die, making it ideal for low-power amplification and switching applications. The device offers robust performance with clearly defined maximum ratings and electrical characteristics for both NPN and PNP components. Product Attributes Type: Dual Transistor (NPN+PNP) Construction:
General purpose transistor CBI S9014 NPN type in plastic surface mounted SOT23 package with 3 leads
Product Overview The S9014 is an NPN transistor designed for general-purpose applications. It is complementary to the S9015 transistor. This device is housed in a plastic surface-mounted SOT-23 package with 3 leads. Product Attributes Complementary to S9015 Marking: J6 Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test conditions MIN TYP MAX UNIT MAXIMUM RATINGS (TA=25 unless otherwise noted) Collector-Base Voltage VCBO
Electronic Component PNP Transistor Semiconductor Device Collector Current 05A CBI S8550W
Product Overview This PNP transistor, complementary to the S8050, offers a collector current of 0.5A. It is suitable for various electronic applications requiring a PNP semiconductor component. The device is marked as 2TY and comes in a SOT-323 package. Product Attributes Marking: 2TY Package: SOT-323 Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min Max Units MAXIMUM RATINGS (TA=25 unless otherwise noted)
General Purpose NPN Silicon Transistor CBI BC847CW for Electronic Switching and Circuit Applications
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models with varying voltage and current ratings, making it suitable for diverse electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Planar Transistor Technical Specifications Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit Absolute Maximum Ratings (Ta =
Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High Collector Current Rating
Product Overview The 2SD1623 is a high-performance NPN transistor designed for various electronic applications. It features a low collector-to-emitter saturation voltage, large current capacity with a wide Area of Safe Operation (ASO), and fast switching speeds. This transistor is complementary to the 2SB1123 PNP transistors, making it suitable for a wide range of circuit designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN
