Single Bipolar Transistors
Dual Transistor Component Including NPN and PNP Types CBI BC847PN Suitable for Electronic Applications
Product Overview This product is a plastic-encapsulated dual transistor package containing two isolated NPN and PNP transistors. It is designed for various electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is available in a SOT-363 package. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Transistor Configuration: Dual Transistor
PNP Silicon Epitaxial Planar Transistor CBI MPSA94U for in High Voltage Electronic Amplifier Circuits
Product Overview This PNP Silicon Epitaxial Planar Transistor is designed for high voltage switching and amplifier applications. It offers robust performance with a high collector-emitter voltage rating and is suitable for various electronic circuits requiring reliable amplification and switching capabilities. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-89 Technical Specifications Parameter Symbol Value Unit Conditions
Electronic PNP Transistor CBI BC807-40W in SOT-323 Package Featuring Epitaxial Planar Die Technology
Product Overview The SOT-323 Plastic-Encapsulated Transistors are designed for automatic insertion, featuring an epitaxial planar die construction. They are complementary to the BC817W series. These PNP transistors are suitable for various electronic applications requiring reliable performance and compact packaging. Product Attributes Package Type: SOT-323 Transistor Type: PNP Construction: Epitaxial planar die Complementary To: BC817W Origin: Heyuan China Base Electronics
Microwave NPN Silicon Transistor CBI MMBTSC3356W-3G Suitable for VHF UHF and CATV Band Applications
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications in the VHF, UHF, and CATV bands. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for various performance requirements. The transistor is suitable for applications requiring low noise figures and reliable performance within specified operating conditions. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor
Plastic Encapsulated Transistor CBI FMMT591 Low Equivalent On Resistance for Electronic Circuits
Product Overview These plastic-encapsulate transistors are designed for low equivalent on-resistance applications. They are suitable for various electronic circuits requiring reliable performance. The marking "591" is used for identification. Product Attributes Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Symbol Parameter Value Unit Test Conditions MAXIMUM RATINGS (Ta=25 unless otherwise noted) VCBO Collector-Base Voltage -80 V VCEO
General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC846CW with Voltage and Current Ratings
Product Overview This document details the NPN Silicon Epitaxial Planar Transistor series, including models BC846W, BC847W, BC848W, BC849W, and BC850W. These transistors are designed for general purpose and switching applications. Key characteristics include various voltage ratings, current handling capabilities, and DC current gain (hFE) across different grades (AW, BW, CW). The series offers specific performance parameters such as collector-emitter saturation voltage (VCE
Power Amplification and Switching Dual Transistor CBI MMDT2227DW with Epitaxial Planar Die Construction
Product Overview This product is a plastic-encapsulated dual transistor, featuring one 2222A NPN and one 2907A PNP transistor in a single package. It is ideal for power amplification and switching applications. The device utilizes epitaxial planar die construction and is marked as K27 for the NPN type. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-363 Construction: Epitaxial planar die Configuration: Dual Transistor (NPN + PNP)
PNP Plastic Encapsulated Transistor CBI BC860CW Suitable for Switching and AF Amplifier Applications
Product Overview These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Transistor (PNP) Encapsulation: Plastic Package: SOT-323 Technical Specifications Parameter Symbol Model Value Unit Collector Base Voltage -VCBO BC856W 80 V
NPN Transistor CBI MMBT4081RW Designed for Electronic Applications Requiring Consistent Current Gain
Product Overview This NPN transistor offers excellent hFE linearity and serves as a complement to the 2A1576A. It is designed for various electronic applications requiring precise current gain and stable performance. Product Attributes Type: Transistor (NPN) Package: SOT-323 Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 60 V Collector
High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design
Product Overview This document details NPN Darlington Transistors, manufactured by Heyuan China Base Electronics Technology Co., Ltd. These transistors are designed for high current gain applications. Key features include a high collector current rating and a wide operating temperature range. They are suitable for various electronic applications requiring efficient current amplification. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type
Compact dual transistor module CBI BC846DW featuring two NPN transistors in single SOT-363 package
Product Overview This plastic-encapsulated dual transistor offers two NPN transistors within a single package, significantly reducing component count and board space. It ensures no mutual interference between the transistors, making it suitable for various electronic applications. The device is designed for efficient operation and reliability. Product Attributes Type: Dual Transistor (NPN+NPN) Package: SOT-363 Origin: Heyuan China Base Electronics Technology Co., Ltd.
SOT23 Plastic Package Transistor CBI MMBTSA1037 PNP Silicon Epitaxial Planar for Various Electronics
Product Overview This PNP Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different performance requirements. The transistor is housed in a compact SOT-23 plastic package. Special requests for different pin configurations can be accommodated. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: PNP Silicon Epitaxial
General purpose NPN transistor CBI S9014 plastic surface mount SOT23 package complementary to S9015
Product Overview The S9014 is an NPN transistor designed for general-purpose applications. It is complementary to the S9015 transistor. This component is housed in a plastic surface-mounted SOT-23 package with 3 leads. Product Attributes Complementary to S9015 Marking: J6 Package: SOT-23 Technical Specifications Parameter Symbol Test Conditions MIN TYP MAX Units Maximum Ratings (TA=25 unless otherwise noted) Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V
NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial Planar SOT523 Package
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three DC current gain groups (Q, R, and S) and is housed in a plastic surface-mounted SOT-523 package with 3 leads. Product Attributes Origin: Heyuan China Base Electronics Technology Co., Ltd. Material: Silicon Epitaxial Planar Package Type: Plastic surface mounted package; 3 leads SOT-523 Transistor Type: NPN Technical
Compact dual PNP transistor solution CBI BC856DW ideal for space constrained electronic applications
Product Overview This product features two PNP transistors integrated into a single package, offering a compact solution that reduces component count and board space. The dual transistor design ensures no mutual interference between the individual transistors, providing reliable performance. It is suitable for applications requiring two complementary PNP transistors in a space-constrained environment. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd
High Reliability Dual NPN Transistor CBI MMDT2222ADW Featuring SOT363 Package for Electronic Circuits
Product Overview This product features plastic-encapsulated transistors with complementary PNP types available, specifically the MMDT2907ADW. It is designed for switching applications, offering defined delay, rise, storage, and fall times. The device also exhibits characteristics suitable for amplification and general-purpose electronic circuits, with parameters like DC current gain (hFE), collector-emitter saturation voltage (VCE(sat)), and transition frequency (fT) detailed
amplification switching dual transistor plastic encapsulated CBI MMDT3906V with epitaxial planar die
Product Overview This DUAL TRANSISTOR (PNP+PNP) is constructed with epitaxial planar die, making it ideal for low power amplification and switching applications. It is a plastic-encapsulated transistor designed for reliable performance. Product Attributes Type: DUAL TRANSISTOR (PNP+PNP) Construction: Epitaxial planar die Encapsulation: Plastic-Encapsulate Transistors Origin: Heyuan China Base Electronics Technology Co., Ltd. Marking: K3N Technical Specifications Parameter
SOT323 Plastic Encapsulated NPN Transistor CBI S9013W Offering High Collector Current and Linear HFE
Product Overview The SOT-323 Plastic-Encapsulate Transistor S9013W is an NPN transistor designed for applications requiring high collector current and excellent HFE linearity. It is suitable for general-purpose amplification and switching circuits. Product Attributes Type: Transistor (NPN) Package: SOT-323 Marking: J3 Technical Specifications Symbol Parameter Test Conditions Min Typ Max Unit MAXIMUM RATINGS (Ta=25 unless otherwise noted) VCBO Collector-Base Voltage 40 V VCEO
Durable low current low voltage PNP transistor CBI 2N3906U for electronic component applications
Product Overview This PNP transistor is designed as a compliment to the 2N3904U, offering low current and low voltage capabilities. It is suitable for various electronic applications requiring a reliable PNP transistor. Product Attributes Marking: 2A Package: Plastic-Encapsulate Transistors Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Symbol Parameter Test Conditions Value Units MAXIMUM RATINGS (Ta=25 unless otherwise noted) VCBO
Electronic component CBI BC847AW NPN silicon epitaxial planar transistor for diverse circuit designs
Product Overview This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models with varying voltage and current ratings, making it suitable for diverse electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Planar Transistor Technical Specifications Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit Absolute Maximum Ratings (Ta =
