Single Bipolar Transistors
Epitaxial Planar Die Plastic Encapsulated Transistor CBI MMDT9014DW Medium Power Amplification Device
Product Overview This plastic-encapsulated transistor features an epitaxial planar die construction and is ideal for medium power amplification and switching applications. A complementary PNP type, MMDT9015, is also available. The TGL6 is the marking for this transistor. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: Plastic-Encapsulated Transistor Construction: Epitaxial Planar Die Marking: TGL6 Complementary PNP Type: MMDT9015 Package:
Plastic Encapsulated Dual PNP Transistor CBI BC857BV with Epitaxial Die Construction SOT563 Package
Product Overview The BC857BV is a plastic-encapsulated dual PNP transistor featuring epitaxial die construction and an ultra-small surface mount package. Complementary NPN types are available. This transistor is designed for various electronic applications requiring reliable PNP amplification and switching. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Dual Transistor (PNP+PNP) Package Type: SOT-563 Marking Code: K5V Technical
Plastic encapsulated transistor model CBI 2SD1005 offering high breakdown voltage and consistent gain
Product Overview This NPN plastic-encapsulated transistor features a small flat package, high breakdown voltage, and excellent DC current gain linearity. It is suitable for applications requiring reliable performance and consistent gain characteristics. Product Attributes Brand: Not explicitly mentioned, but associated with Heyuan China Base Electronics Technology Co., Ltd. Origin: China Technical Specifications Parameter Symbol Test Conditions Min Typ Max Unit Collector-base
SOT23 Package NPN Silicon Epitaxial Transistor CBI BC848B for in Switching and Amplifier Circuits
Product Overview The BC846...BC850 series are NPN silicon epitaxial transistors designed for switching and amplifier applications. For complementary PNP types, the BC856...BC860 series is recommended. These transistors are housed in a SOT-23 plastic package. Product Attributes Package Type: SOT-23 Plastic Package Transistor Type: NPN Silicon Epitaxial Complementary Type: PNP transistors BC856...BC860 Technical Specifications Parameter Symbol BC846 BC847, BC850 BC848, BC849
NPN transistor CBI C1815 featuring SOT23 package ideal for switching and amplification applications
Product Overview The C1815 is an NPN bipolar junction transistor designed for general-purpose applications. It features a power dissipation capability and is marked with 'HF'. This transistor is suitable for various electronic circuits requiring amplification or switching functions. Product Attributes Type: NPN Transistor Marking: HF Package: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol Test Conditions Value Units Maximum Ratings
NPN Silicon Epitaxial Transistor CBI BC846AT for Switching and Amplifier Applications in Electronics
Product Overview NPN Silicon Epitaxial Transistors designed for switching and amplifier applications. These transistors are suitable for a range of applications requiring reliable performance in both switching and amplification tasks. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Type: NPN Silicon Epitaxial Transistor Technical Specifications Parameter Symbol BC846T BC847T, BC850T BC848T, BC849T Unit Value Collector Base Voltage VCBO 80 50 30 V
SOT89 plastic encapsulated PNP transistor CBI SS8550 for general purpose amplification and switching
Product Overview The SS8550 is a PNP bipolar transistor in a SOT-89 plastic-encapsulated package. It serves as a compliment to the SS8050 transistor and is marked with 'Y2'. This transistor is designed for general-purpose amplification and switching applications. Product Attributes Type: PNP Transistor Package: SOT-89 Plastic-Encapsulate Marking: Y2 Compliment to: SS8050 Technical Specifications Parameter Symbol Test Conditions Min Max Unit MAXIMUM RATINGS (Ta=25 unless
SOT23 Package PNP Silicon Epitaxial Transistor CBI BC860C Designed for Amplifier Circuit Integration
Product Overview This product is a PNP Silicon Epitaxial Transistor designed for switching and amplifier applications. It is housed in a SOT-23 plastic package, offering a reliable component for various electronic circuits. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Technical Specifications Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol BC856 BC857, BC860 BC858, BC859 Unit Collector Base Voltage
General Purpose NPN Silicon Epitaxial Planar Transistor CBI BC847BW Suitable for Switching Circuits
Product Overview The BC846W to BC850W series are NPN silicon epitaxial planar transistors designed for general purpose and switching applications. These transistors offer a range of voltage and current ratings suitable for various electronic circuits. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Application: General purpose and switching applications Technical Specifications Parameter Symbol BC846W BC847W BC848W BC849W BC850W Unit Absolute Maximum Ratings
Surface Mount NPN Transistor CBI S9014T with Collector Emitter Voltage 45V and Plastic Encapsulation
Product Overview This NPN transistor is designed for surface mount applications and serves as a complementary part to the S9015T. It offers a compact form factor suitable for various electronic circuits. Key electrical characteristics include a collector-base breakdown voltage of 50V, a collector-emitter breakdown voltage of 45V, and a collector current rating of 100mA. The transistor is classified by its DC current gain (hFE) into 'L' (200450) and 'H' (4501000) ranks.
Electronic Component CBI BC856C PNP Silicon Transistor in SOT23 Package for Amplifier and Switching
Product Overview This PNP Silicon Epitaxial Transistor is designed for switching and amplifier applications. Packaged in a SOT-23 plastic case, it offers reliable performance for various electronic circuits. Available in multiple models (BC856, BC857, BC858, BC859, BC860) with distinct characteristics, these transistors are suitable for general-purpose use. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package
Surface Mount NPN Transistor CBI MMBT4401W in SOT323 Package Ideal for Various Electronic Applications
Product Overview This NPN bipolar junction transistor (BJT) is designed for surface mount applications, offering a complementary function to the MMBT4403W. It is housed in a small SOT-323 package and is suitable for various electronic circuits requiring a compact and reliable NPN transistor. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-323 Transistor Type: NPN Technical Specifications Parameter Symbol Test Conditions Min Typ
Axial planar die PNP transistor CBI BC807-40 ideal for general purpose and automatic insertion processes
Product Overview This PNP transistor is ideally suited for automatic insertion due to its axial planar die construction. A complementary NPN type (BC817) is available. It is designed for general-purpose applications requiring reliable performance. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Construction: Axial planar die Technical Specifications Symbol Parameter Model Test Conditions Value Units Maximum Ratings (TA=25
High current gain NPN transistor CBI BC817-40W with low collector-emitter voltage in SOT-323 package
Product Overview This NPN transistor, housed in a SOT-323 package, is designed for general AF applications. It offers high collector current capabilities, high current gain, and a low collector-emitter saturation voltage. Key features include a high collector current of up to 0.5 A and a high current gain (hFE) ranging from 100 to 600. It is suitable for applications requiring efficient amplification and switching at audio frequencies. Product Attributes Package Type: SOT-323
SOT-89 Package NPN Silicon Epitaxial Planar Transistor CBI 2SC2881U for Power Amplification Circuits
Product Overview This is an NPN Silicon Epitaxial Planar Transistor designed for power amplification. It offers specific electrical characteristics and is housed in a SOT-89 package. The transistor is suitable for applications requiring precise current gain and voltage ratings. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-89 Origin: Heyuan China Base Electronics Technology Co., Ltd. Technical Specifications Parameter Symbol Value Unit Notes
Audio Amplifier Driver Stage NPN Transistor CBI BCX55-16U with Low Voltage and High Current Features
Product Overview This NPN transistor series offers PNP complements to the BCX51, BCX52, and BCX53 families. Designed for low voltage and high current applications, these transistors are ideal for driver stages in audio amplifiers. The series includes models BCX54, BCX55, and BCX56, with various current gain (hFE) ranks available, denoted by suffixes like -10 and -16. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Product Type: Transistor (NPN)
High Breakdown Voltage NPN Transistor CBI MMBTA42 in SOT23 Plastic Package with Low Saturation Voltage
Product Overview The MMBTA42 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features a high breakdown voltage and low collector-emitter saturation voltage. This transistor is complementary to the MMBTA92 (PNP) and is suitable for various applications requiring these characteristics. Product Attributes Package Type: SOT-23 Plastic-Encapsulated Transistor Type: NPN Marking Code: 1D Complementary To: MMBTA92 (PNP) Technical Specifications Parameter Symbol Test
NPN Silicon Epitaxial Planar Transistor CBI 2SC4672U DKQ Suitable for Electronic Circuit Applications
Product Overview This NPN Silicon Epitaxial Planar Transistor, designed for low-frequency applications, offers reliable performance with key electrical characteristics defined at 25C. It is suitable for various electronic circuits requiring precise current gain and breakdown voltage specifications. The transistor is housed in a SOT-89 package. Product Attributes Type: NPN Silicon Epitaxial Planar Transistor Package: SOT-89 Origin: Heyuan China Base Electronics Technology Co.,
Dual NPN transistor CBI MMDT3904DW in compact SOT363 package suitable for amplification and switching
Product Overview The MMDT3904DW is a SOT-363 plastic-encapsulated dual NPN transistor designed for low power amplification and switching applications. It features epitaxial planar die construction for reliable performance. Product Attributes Package: SOT-363 Transistor Type: Dual NPN (NPN+NPN) Marking Code: K6N Technical Specifications Symbol Parameter Test Conditions Min Typ Max Units MAXIMUM RATINGS (Ta=25 unless otherwise noted) VCBO Collector-Base Voltage 60 V VCEO
Surface mounted PNP transistor CBI S9015 in SOT23 package for various electronic circuit applications
Product Overview The S9015 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the S9014 transistor. This device is housed in a compact SOT-23 plastic surface-mounted package with 3 leads, making it suitable for various electronic circuits. Product Attributes Transistor Type: PNP Complementary to: S9014 Marking: M6 Package Type: SOT-23 (Plastic surface mounted package; 3 leads) Technical Specifications Parameter Symbol
