Single FETs, MOSFETs
MATSUKI ME35N10 G N Channel MOSFET Power Transistor Offering High Cell Density and Low On Resistance
Product OverviewThe ME35N10 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device exceptionally suitable for low-voltage applications. It offers superior on...
P Channel MOSFET semiconductor device MATSUKI MESS84-G in SOT 23 package for electronic applications
Product OverviewP-Channel MOSFET MESS84 is a semiconductor device designed for various electronic applications. It is housed in a SOT-23 package.Product AttributesPackage: SOT-23Marking Code: MONTH CODETechnical SpecificationsDevice NamePackageMonth CodeYearMarking CodeMESS84SOT-23E2007, 2009MMESS84...
Fast switching transistor MCC MCU80N06A-TP with improved DGW capability and UL 94V0 flammability rating
Product Overview This product offers fast switching capabilities with improved D(G)W capability and a moisture sensitivity level of 1. It meets UL 94V-0 flammability rating and is available in a lead-free finish, RoHS compliant. The product is suitable for various applications requiring efficient ...
P Channel Enhancement Mode MOSFET LRC LP3407LT3G with 30V Voltage Rating and Low On State Resistance
Product Overview The LP3407LT1G and S-LP3407LT1G are 30V P-Channel Enhancement-Mode MOSFETs designed for automotive and other applications with unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, ensuring high reliability and suitability for demanding ...
Megain MGP040N06N semiconductor device used in power electronics and industrial automation equipment
Product OverviewThe MGP040N06N is a product from Megain, as indicated by the provided documentation. Further details regarding its function, usage, advantages, and application scenarios are not explicitly stated in the provided text.Product AttributesBrand: MegainTechnical SpecificationsModelRevWebs...
Power MOSFET Minos MPG180N03P Offering Low RDS ON and Fast Switching for Battery Protection Circuits
Product OverviewThe MPG180N03P is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications, providing fast switching, ...
P Channel MOSFET MCC MCAC25P10YHE3 TP with Continuous Drain Current 70A and ±20V Gate Source Voltage
Product Overview The MCAC25P10YHE3 is a P-CHANNEL MOSFET featuring Split Gate Trench MOSFET Technology, designed for excellent heat dissipation and high-density cell design for low RDS(ON). This AEC-Q101 Qualified device is Halogen Free, RoHS Compliant, and meets UL 94 V-0 flammability rating. It is ...
30 Volt N Channel MOSFET LRC LN3432LT1G Featuring Low RDS on and Halogen Free Material Compliance
Product Overview The LN3432LT1G is an N-Channel 30-V (D-S) MOSFET designed for various power applications. It features low RDS(on) trench technology, low thermal impedance, and fast switching speeds. This MOSFET is suitable for applications such as Power Routing, DC/DC Conversion, and Motor Drives. ...
MEM2310XG N Channel DMOS Trench Transistor Featuring Ultra Low On Resistance and High Speed Switching
Product OverviewThe MEM2310X is an N-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is specifically designed for low-voltage applications and low power dissipation in a subminiature SOT23 surface mount package. ...
Power MOSFET Device MATSUKI ME4435 P Channel Logic Enhancement Mode for Battery Powered Applications
Product OverviewThe ME4435 is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as ...
MOSFET MCC MCQ9435-TP featuring low thermal resistance and high voltage breakdown for power circuits
Product Overview This product is a MOSFET designed for various applications, featuring a Lead-Free Finish and RoHS Compliance. It meets UL 94V-0 flammability rating and is Halogen Free, designated as a Green device. The product offers a wide operating temperature range from -55C to +150C, with a low ...
MS170N25HGF4 N Channel MOSFET Featuring Fast Intrinsic Diode and High Power Dissipation Capability
Product OverviewThe MS170N25HGF4 H1.01 by Maspower is an N-Channel MOSFET featuring low RDS(on) and high current handling capability. It includes a fast intrinsic diode and is avalanche rated, making it suitable for demanding power applications such as DC-DC converters, UPS systems, AC motor drives, ...
Power MOSFET MATSUKI ME80N75T Featuring Logic Enhancement Mode and High Continuous Drain Current Capability
Product OverviewThe ME80N75T is an N-Channel logic enhancement mode power field effect transistor designed using high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, offering super high density cell design for extremely low RDS(ON). It provides ...
High Voltage N Channel MOSFET MCC MCU20N06B TP with 60 Volt Drain Source Voltage and RoHS Compliance
Product Overview The MCU20N06B is an N-channel MOSFET designed with a high-density cell structure for ultra-low RDS(on). It features fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This MOSFET utilizes special process technology for high ESD ...
power electronics component Megain MGW40N120N 1200V N Channel Silicon Carbide MOSFET for switching applications
Product OverviewThe MGW40N120N is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-performance power electronics applications. It features an optimized package with a separate driver source pin, offering high blocking voltage with low on-resistance, high-speed switching with low ...
P Channel DMOS trench technology transistor MATSUKI ME45P04 for battery powered circuit applications
Product OverviewThe ME45P04-G is a P-Channel logic enhancement mode power field effect transistor utilizing high cell density, DMOS trench technology. This advanced design significantly minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular ...
Silicon N Channel Power MOSFET Minos MD20N50 with Low Conduction Resistance and Fast Switching Speed
Product DescriptionThe MD20N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. It is suitable for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and ...
switching MASPOWER MS100N60ICB3 N channel MOSFET with low RDSon and high current handling capability
Product OverviewThe MS100N60ICB3(C0) from Maspower is a high-performance N-channel MOSFET designed for demanding power applications. It features ultra-low RDS(on) of 33.5m (typ.) and ultra-low gate charge, along with 100% UIS tested reliability. This RoHS compliant component is ideal for power ...
Power MOSFET Minos MP13N50 with 60 Watts Total Dissipation and 175 Degree Maximum Operating Temperature
Product OverviewThe MP13N50PF is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of power switching applications, including adapters and chargers.Product AttributesVersion: A01Technical SpecificationsSymbolPara...
Power field effect transistor MATSUKI ME2307 P Channel type designed for operation in portable devices
Product OverviewThe ME2307 is a P-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and ...
