Single FETs, MOSFETs
220 Package Single N Channel Trench MOSFET MagnaChip Semicon MDP10N055TH for E Vehicle Applications
Product OverviewThe MDP10N055TH is a single N-Channel Trench MOSFET from Magnachip Semiconductor Ltd. It offers high performance with excellent on-state resistance and fast switching capabilities. This MOSFET is suitable for industrial applications including low power drives for e-bikes (e-vehicles)...
N Channel MOSFET Trench LV Technology MCC SI2304 TP Voltage Controlled Small Signal Switching Device
Product Overview The SI2304 is an N-Channel MOSFET featuring Trench LV MOSFET Technology, designed for voltage-controlled small signal switching applications. It is a "Green" device, Halogen Free, and meets UL 94 V-0 flammability rating. This RoHS compliant component is suitable for a wide operating ...
Power MOSFET MASPOWER MS140N30HGC0 with TO 247 package and 140 amperes continuous drain current
Product OverviewThe MS140N30HGB3/C0 is a high-performance Maspower MOSFET designed for power switching applications. It features a VDS of 300V and an ID of 140A with an ultra-low RDS(on) of less than 35m at VGS=10V, achieved through a high-density cell design. Key advantages include low gate charge ...
High voltage MASPOWER MS30N90ICE0 power semiconductor with low RDSon and easy drive characteristics
Product OverviewThe MS30N90ICE0/C0 is a high-performance power semiconductor from Maspower, designed for demanding applications. It features very low RDS(on) and Qg, ensuring efficient operation. The device is 100% avalanche tested and easy to drive, making it a practical choice for Uninterruptible ...
1.8 Volt Rated N Channel MOSFET LRC LSI1012LT1G with Low Threshold Voltage and Fast Switching Speed
Product Overview The LESHAN RADIO COMPANY, LTD. S-LSI1012LT1G is an N-Channel 1.8-V (G-S) Power MOSFET designed for high-side switching applications. It features TrenchFET technology, offering low on-resistance and a low threshold voltage for ease of driving and low-voltage operation. The device ...
Power field effect transistor MATSUKI ME4565A-G with N channel and P channel logic enhancement mode
Product OverviewThe ME4565A series are N- and P-Channel logic enhancement mode power field-effect transistors manufactured using high cell density DMOS trench technology. This technology is optimized to minimize on-state resistance, making these devices ideal for low-voltage applications such as ...
P Channel Trench MOSFET MagnaChip Semicon MDF3752TH featuring low gate charge and robust performance
MDF3752TH P-Channel Trench MOSFETThe MDF3752TH is a P-Channel Trench MOSFET from Magnachip Semiconductor Ltd., leveraging advanced Trench MOSFET Technology to deliver high performance in on-state resistance and switching characteristics. Its low RDS(ON) and low Gate Charge offer significant benefits ...
High voltage MOSFET MASPOWER MS15N170HGC0 designed for demanding switching and inverter applications
Product OverviewThe MS15N170HGC0 H1.01 Maspower is a high-performance power semiconductor designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitances, high-speed switching, and very low on-resistance. ...
Battery powered circuit transistors MATSUKI ME4565AD4 with high cell density DMOS trench technology
Product OverviewThe ME4565AD4 is a series of N- and P-Channel logic enhancement mode power field-effect transistors manufactured using high cell density DMOS trench technology. This technology minimizes on-state resistance, making these devices ideal for low-voltage applications such as power ...
MDD Microdiode Semiconductor MDDG04R01L 40V N Channel MOSFET with High Current Capacity and Low RDSon
Product OverviewThe MDDG04R01L is a 40V N-Channel Enhancement Mode MOSFET produced using MDD Semiconductor's advanced Power Trench process with Shielded Gate technology. It offers extremely low RDS(on) of 0.85 m at VGS = 10V, ID = 75A, and superior switching performance with a best-in-class soft ...
50 Volt N Channel Power MOSFET LBSS138WT1G Low Threshold Voltage 200 Milliamp Halogen Free Device
Product Overview The LBSS138WT1G and S-LBSS138WT1G are N-Channel Power MOSFETs designed for low voltage applications. The S-prefix variants are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications with stringent site and control change requirements. These ...
Double Trench N channel Power MOSFET Minos MPT012N08-T with Improved Switching Performance and Low RDS
Product OverviewThe MPT012N08-T is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy, making it ideal for Battery Management Systems (BMS) and high current ...
MDD Microdiode Semiconductor MDD30P04D 40V P Channel MOSFET with 100 percent UIS tested power device
Product OverviewThe MDD30P04D is a 40V P-Channel Enhancement Mode MOSFET designed for power management applications in telecom, industrial automation, motor drives, and uninterruptible power supplies. It utilizes Microdiode's advanced Power Trench technology, optimized for low on-state resistance ...
20V P Channel MOSFET with Trench Technology Featuring Low RDS ON and Fast Switching LRC LP4217T1G Device
Product Overview The LP4217T1G is a 20V P-Channel (D-S) MOSFET featuring low RDS(ON) trench technology, low thermal impedance, and fast switching speed. It is designed for applications such as Load Switches, DC/DC Conversion, and Motor Drives. The product complies with RoHS requirements and is ...
Compact surface mount P channel MOSFET MATSUKI ME2345A designed for loss in battery powered circuits
Product OverviewThe ME2345A is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as ...
MOSFET MagnaChip Semicon MDQ20N116PTFTH designed for high temperature power electronics applications
Product OverviewThe Magnachip MDQ20N116PTFTH is a single N-channel Trench MOSFET designed for high-performance applications. Featuring Trench power MOSFET technology, it offers enhanced avalanche ruggedness and improved diode reverse recovery time for increased efficiency. This MOSFET is ideal for ...
Low RDS ON P Channel 60V MOSFET LRC LP2309LT1G suitable for power management in notebooks and DSCs
Product Overview The LP2309LT1G is a P-Channel 60V (D-S) MOSFET designed for power management applications. It features a super high density cell design for extremely low RDS(ON), offering exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for power management in ...
MCC SI1012 TP N Channel MOSFET featuring halogen free and lead free epoxy package with ESD protection
Product Overview The SI1012 is an N-Channel MOSFET designed for various applications. It features a low threshold voltage, ESD protected gate, and is housed in a SOT-523 package. The epoxy material meets UL 94 V-0 flammability rating and it offers Moisture Sensitivity Level 1. This MOSFET is ...
N channel MOSFET MagnaChip Semicon MMIS90R1K4PTH with low gate threshold voltage and leakage current
Product OverviewThe MMIS90R1K4P is a power MOSFET from Magnachip Semiconductor, utilizing advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This device provides designers with the advantage of low EMI ...
Low On Resistance P Channel MOSFET MCC SI3401AHE3 TP with High DC Current Capability and Performance
Product Overview The SI3401AHE3 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(on) and exceptional on-resistance and maximum DC current capability. This AEC-Q101 qualified device features a high-density cell design and is Halogen Free and RoHS Compliant. It ...
