Single FETs, MOSFETs

Product OverviewThis 20V N-Channel MOSFET features a surface mount package, low RDS(on), and operates at low logic level gate drive with ESD protection. It is designed for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting applications.Product AttributesBrand: SLKORMicroModel: SL2302MPackage: SOT-723Technical SpecificationsParameterSymbolTest ConditionMin.Typ.Max.UnitAbsolute Maximum RatingsVDS20VVGS

Product OverviewThis N-channel enhancement mode power MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It is RoHS compliant and designed for efficient power management applications.Product AttributesBrand: SLKORMicro (implied by URL)Certifications: RoHSTechnical SpecificationsParameterSymbolConditionsMin.Typ.Max.UnitGeneral DescriptionDrain-Source VoltageVDS30VGate-Source VoltageVGS±20VDrain Current-Continuous (TC=25)ID150ADrain

Product OverviewThe SL60P03D is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and comes in an excellent package for good heat dissipation.Product AttributesBrand: SLKORMicroModel: SL60P03DPackage: TO-252Origin: Not specifiedMaterial: Not specifiedCo

SL4468A N-Channel MOSFETThe SL4468A is an N-Channel MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. This MOSFET is suitable for various power switching applications.Product AttributesBrand: slkormicroModel: SL4468APackage: SOP-8Technical SpecificationsSymbolParameterConditionMinTypMaxUnitAbsolute Maximum

Product Overview The SP3407T2 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It offers robust performance with key electrical characteristics optimized for efficient operation. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package: SOT-23 Device Code:

Product OverviewThe SL4612B is a 60V N-Channel and P-Channel MOSFET designed for high power and current handling capabilities. It features a lead-free product acquisition and comes in a surface mount SOP-8 package. This device is ideal for applications such as battery protection, load switching, and power management.Product AttributesBrand: SLKORMicroModel: SL4612BPackage: SOP-8Certifications: Lead free product acquiredTechnical SpecificationsParameterConditionN-Channel MinN

Product Overview The SP60N05GTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies (UPS). The device is available in a TO-263 package.

Product OverviewThe 2N7002KDW is an N-Channel MOSFET featuring a high-density cell design for low RDS(ON). This voltage-controlled small signal switch offers high saturation current capability and ESD protection, making it suitable for various applications. Its epoxy meets UL 94 V-0 flammability rating.Product AttributesBrand: SLKORMicro (implied by website)Model: 2N7002KDWCertifications: UL 94 V-0 flammability ratingTechnical SpecificationsSymbolParameterConditionsMinTypMaxU

Product OverviewThe SL5N50D is an N-Channel MOSFET designed for high-performance applications. It features low RDS(ON) of 1.5 (Max) at VGS=10V, low gate charge (Typical 18.5nC), improved dv/dt capability, and is 100% avalanche tested. This MOSFET is suitable for various power switching applications requiring efficient and reliable performance.Product AttributesBrand: SLKORMicroModel: SL5N50DPackage: TO-252Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxUnitsMAX

Product Overview The SP60N02AGTO is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for power switching applications, DC-DC converters, and power management systems. It is supplied in a TOLL package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd

Product Overview The SL276N04M is an N-Channel Enhancement Mode MOSFET designed for high-performance power applications. It features fast switching speed, reliability, and ruggedness, making it suitable for DC-to-DC converters, switch mode power supplies, and brushless DC motor control. This component is ROHS Compliant & Halogen-Free, 100% UIS and Rg Tested, and has a Moisture Sensitivity Level of MSL1. Product Attributes Brand: SLKORMicro Certifications: ROHS Compliant &

Product OverviewThe IRL540NPBF-VB is a N-Channel 100-V (D-S) MOSFET featuring Trench Power MOSFET technology for low thermal resistance and high junction temperature capability. It is designed for various applications requiring efficient power switching.Product AttributesBrand: VBsemiCertifications: RoHS Compliant, Halogen-FreeTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitStatic CharacteristicsDrain-Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 250

Product OverviewP-Channel Enhancement-Mode MOS FETs designed for various electronic applications. These devices offer reliable performance with key electrical characteristics detailed below.Product AttributesBrand: SLKormicroModel: SL3409Package: SOT-23Technical SpecificationsCharacteristicSymbolMinTypMaxUnitNotesDrain-Source Breakdown VoltageBVDSS-30--V(ID = -250uA,VGS=0V)Gate Threshold VoltageVGS(th)-1.4--2.4V(ID = -250uA,VGS= VDS)Diode Forward Voltage DropVSD---1V(IS= -1A

Product Overview The SP40N02BGNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, PWM applications, and DC-DC converters. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP40N02BGNK Device Code: 40N02BG

Product Overview The SP40N08TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for efficient power management, it features fast switching, low gate charge, and low RDS(on) at various gate drive voltages (8m at 10V and 11m at 4.5V). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology

Product Overview The 2N7002T is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities in a surface mount package. It features ESD protection up to 2KV and is suitable for applications such as battery switches and DC/DC converters. This device offers a low on-resistance and is available in a SOT-523 package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: 2N7002T

Product OverviewThe FKN0008 is a high cell density trenched N-channel MOSFET designed for excellent RDSON and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.Product AttributesGreen Device AvailableMeets RoHS and Green Product requirementsTechnical

Product OverviewThe AOD2210-VB is a high-performance N-Channel Trench Power MOSFET designed for primary side switching applications. It features a 175 C junction temperature rating, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers a low on-resistance and is compliant with RoHS Directive 2002/95/EC.Product AttributesBrand: VBsemiCertifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A, IEC 61249-2-21)Technical SpecificationsParameterSymbol

Product OverviewN-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. This voltage-controlled small signal switch offers low input capacitance, fast switching speed, and low input/output leakage. It is suitable for battery-operated systems, solid-state relays, and direct logic-level interface with TTL/CMOS.Product AttributesBrand: SLKORMicroModel: NTR4003NTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitAbsolute Maximum

Product OverviewThis P-Channel 60-V (D-S) MOSFET features Trench Power MOSFET technology and is 100% UIS tested. It is designed for load switch applications.Product AttributesBrand: VBsemiOrigin: TaiwanCertifications: RoHS compliantTechnical SpecificationsParameterSymbolTest ConditionsMin.Typ.Max.UnitP-Channel 60-V (D-S) MOSFETDrain-Source VoltageVDS-60VGate-Source VoltageVGS±20VContinuous Drain Current (TC = 25 C)ID-70AGate-Source Threshold VoltageVGS(th)VDS = VGS, ID = -