Single FETs, MOSFETs

Product Overview The HSCB2016 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced

Product Overview The HSBB6066 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced Trench MOS Technology, it offers low gate charge and low RDS(ON) for enhanced efficiency. This MOSFET is 100% EAS guaranteed and available in a Green Device option. Its key applications include motor control, DC/DC converters, and synchronous rectifier circuits, providing reliable and efficient power management solutions. Product

Product OverviewThe SMF18N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, with a typical RDS(on) of 270m@VGS=10V.Product AttributesBrand: HUAKE semiconductorsProduct Type: N-Channel MOSFETPackage: TO-220FTechnical SpecificationsParameterSymbolConditionsMinTypMaxUnitAb

Product OverviewThe SVD3205T/F/S is an N-channel enhancement mode power MOS field-effect transistor from Silan Microelectronics. Utilizing proprietary flat low-voltage structure VDMOS technology, it offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse capability in avalanche and commutation modes. This makes it ideal for applications such as electronic ballasts and low-power Switched-Mode Power Supplies (SMPS).Product AttributesBr

Product Overview The SVT085R5NT/S/L5/KL is an N-channel enhancement mode power MOS field effect transistor from Silan Microelectronics, utilizing LVMOS technology. It is engineered for minimal on-state resistance and superior switching performance, making it ideal for uninterruptible power supplies and inverter system power management. Key features include high current and voltage ratings, low gate charge, low Crss, fast switching, and improved dv/dt capability. Product

Product OverviewThe HCF65R180 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It features a low RDS(on) of 180m at VGS=10V, low gate charge, low Crss, and is 100% avalanche tested. This MOSFET offers fast switching speeds and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power factor correction applications.Product AttributesBrand: HUAKE semiconductorsProduct Line: CHIP:SVersion: 1

Product Overview The SMF2N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers excellent performance with features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power applications. Product Attributes Brand: HUAKE semiconductors Model: SMF2N65 Product Type: N-Channel

Product OverviewThe SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance reduction, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan

Product OverviewThe SMT12N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers advantages such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMT12N60Document Version: B/0Date: 2017.08Technical SpecificationsParameterSymbolTest ConditionsMinTypMaxU

Product OverviewThe SMP20N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features a low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is ideal for High Frequency Switching Mode Power Supplies and Active Power Factor Correction.Product AttributesBrand: HUAKE semiconductorsModel: SMP20N65Version: 1.0Technical SpecificationsSymbolParameterTest ConditionsMin

Product OverviewThe SVF7N65CF/D/MJ/MJL/K/T is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology minimizes on-state resistance, enhances switching performance, and provides superior withstand capability against high energy pulses in avalanche and commutation modes. It is widely employed in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers

IRLML2502 MOSFET (N-CHANNEL)The IRLML2502 is an N-channel MOSFET designed for fast switching and ultra-low on-resistance. It is a surface-mount device housed in a SOT-23 package, making it suitable for various electronic applications requiring efficient power management.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticFlammability Classification: UL 94V-0Origin: China (implied by company name and email)Technical SpecificationsParameter

Product Overview The HSU4119 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

SVT044R5NT/D/L5 N-CHANNEL MOSFETThe SVT044R5NT/D/L5 is an N-channel enhancement mode power MOS field effect transistor utilizing SILAN's LVMOS technology. This advanced process and cell structure are optimized for minimal on-state resistance and superior switching performance, making it ideal for UPS and Power Management for Inverter Systems.Product AttributesBrand: SILAN MicroelectronicsOrigin: HANGZHOU SILAN MICROELECTRONICS CO.,LTDCertifications: Pb free (for SVT044R5NT),

Product Overview The HSL3103 is a P-channel, 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HSL Product Type: P

HKTQ60N02 LOW VOLTAGE MOSFET (N-CHANNEL)The HKTQ60N02 is a low voltage N-channel MOSFET designed for high-efficiency power conversion. It features ultra-low on-resistance and is ideal for low power DC to DC converters and load switch applications.Product AttributesCase: PDFN3333Case Material: Molded PlasticUL Flammability Classification Rating: 94V-0Weight: 0.012 grams (approximate)Marking: Q60N02Manufacturer: SHENZHEN HOTTECH ELECTRONICS CO.,LTDTechnical SpecificationsSymbol

SMF7N70 700V N-Channel MOSFETThe SMF7N70 is a 700V N-Channel MOSFET from HUAKE semiconductors designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.Product AttributesBrand: HUAKE semiconductorsProduct Type: N-Channel MOSFETChip Version: UDocument Version: 1.0Technical

Product OverviewThe IRLML2803 is an N-Channel MOSFET designed for various electronic applications. It features a SOT-23 package, offering a compact solution with molded plastic construction and UL flammability classification 94V-0. This MOSFET provides efficient switching characteristics and is suitable for general-purpose use.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTDProduct Name: IRLML2803Type: N-CHANNEL MOSFETCase: SOT-23Case Material: Molded PlasticUL

SMH13N50 500V N-Channel MOSFETThe SMH13N50 is a 500V N-Channel MOSFET from HUAKE Semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers a low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable component for demanding power applications.Product AttributesBrand: HUAKE SemiconductorsProduct Type: N-Channel MOSFETChip Version: U, V1.0Technical Specificat

Product OverviewThe SVF10N65CF/K/FJH is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology ensures minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan