Single FETs, MOSFETs

Silan Microelectronics SVF7N80T/F/KL/K/FD N-CHANNEL MOSFET The SVF7N80T/F/KL/K/FD is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.

Product Overview The HSBA0048A is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced Trench MOS Technology, it offers 100V drain-source voltage and a continuous drain current of up to 78A. This MOSFET is characterized by its fast switching speed, 100% EAS guaranteed performance, and availability in a Green Device option. It is ideal for high-frequency switching, synchronous rectification, and DC/DC converter applications

Product Overview The HSBA6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench

Product OverviewThe SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan

Product Overview The HSBA8048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous rectification. This device meets RoHS and Halogen-Free compliance and is 100% EAS guaranteed with full function reliability approval. Its advanced high cell density Trench technology ensures super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS

Product Overview The BSS138 is a high-density cell design N-Channel MOSFET in a SOT-23 package, offering extremely low RDS(on) for rugged and reliable performance. It is designed for direct logic-level interface with TTL/CMOS and is suitable for driving various loads including relays, solenoids, lamps, hammers, displays, memories, and transistors. This MOSFET is an ideal choice for battery-operated systems and solid-state relays. Product Attributes Brand: HIGH DIODE

Product Overview The HSP80N20 is a high-performance N-channel Fast Switching MOSFET featuring an extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Product Reliability: 100% EAS guaranteed, full function

Product OverviewThe HY3712 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 125V and a continuous current of 170A, featuring a low on-resistance of 6.3 m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS Compliant, Lead Free,

Product Overview The HSBB0210 is a dual N-channel 100V fast switching MOSFET featuring advanced trench MOS technology. It offers low Rds(on) and super low gate charge, making it suitable for hard switching and high-speed circuit applications. This device is 100% EAS guaranteed and available in a green device option. Ideal for portable equipment and battery-powered systems. Product Attributes Brand: HS Technology: Advanced Trench MOS Device Type: Dual N-CH MOSFET Environmental

Product Overview The HSBA6076 is a high cell density SGT N-channel MOSFET designed for fast switching applications. It offers excellent RDSON and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Product Reliability: 100% EAS guaranteed, full function reliability approved

Product OverviewThe FL8205 is an N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, providing high power and current handling capability.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDLead Free: YesPackage: TSSOP-8Technical SpecificationsParameterSymbo

Product OverviewThe SVD640T/D/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary S-RinTM structure VDMOS technology. This advanced technology offers minimized on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand: Silan

Product OverviewThe HY3215P/M/B/PS/PM is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance and is available in lead-free and green (RoHS compliant) versions. The device is reliable, rugged, and 100% avalanche tested.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead Free and Green Devices Available (RoHS Compliant)Certifications: RoHS CompliantTechn

Product Overview The HSL6107 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench

Product OverviewThe SVT042R5NL5(T) is an N-channel enhancement mode power MOS field-effect transistor manufactured using advanced LVMOS technology. It offers minimized on-state resistance and superior switching performance, making it ideal for UPS and Power Management for Inverter Systems. Key features include high current handling (240A), low voltage (40V), low gate charge, low Crss, fast switching, and improved dv/dt capability.Product AttributesBrand: Silan Microelectronic

Product OverviewThe HKTD120N04 is an N-CHANNEL Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is suitable for applications requiring efficient power handling and reliable operation.Product AttributesBrand: HOTTECH ELECTRONICS CO.,LTDOrigin: SHENZHENCase Material: Molded PlasticFlammability: UL 94V-0Technical SpecificationsParam

Product OverviewThe SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand:

Product Overview This is a 30V N-Channel MOSFET in a SOT-23 plastic-encapsulated package, designed for high-performance applications. It features TrenchFET technology for excellent RDS(on) and low gate charge, making it ideal for DC/DC converters, load switches for portable devices, and battery switches. The device is RoHS compliant. Product Attributes Brand: HIGH DIODE SEMICONDUCTOR Package Type: SOT-23 Technology: TrenchFET Power MOSFET Compliance: RoHS Compliant Diode Type

FDN338P P-Ch 20V Fast Switching MOSFETs The FDN338P is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. This MOSFET offers super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology. Product Attributes Brand: HS-Semi (implied by www.hs-semi

Product Overview The HSBA4016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS Product Type: N-Channel MOSFET Technology: Advanced high cell density Trench technology Certifications: