Single FETs, MOSFETs

Product OverviewThe 8205A is a N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, providing high power and current handling capability.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO., LTDMaterial: Plastic-EncapsulateCertifications: Lead free product is

Product OverviewThe HKTG50N03 is an N-channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speed, and is easily designed for drive circuits and paralleling. This MOSFET is suitable for various electronic designs requiring reliable and high-performance switching characteristics.Product AttributesBrand: HKT (HEKETAI)Product Type: MOSFET (N-CHANNEL)Case Material: Molded PlasticUL Flammability Classification Rating: 94V

Product Overview The HSM3206 is a dual N-channel, 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key benefits include super low gate charge and excellent CdV/dt effect decline, supported by advanced high cell density

Product Overview The HSS2012 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET Technology:

Product Overview The HSCE1218 is a P-channel, 12V, fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full functional reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product

Product Overview The HSY1502 is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 150V drain-source voltage and a super low RDS(ON) due to its advanced high cell density Trench technology. Key advantages include 100% EAS guaranteed and availability of a green device option. This MOSFET is ideal for motor drivers, UPS systems, power tools, and synchronous rectification in SMPS. Product Attributes Brand: HSY Technology: Advanced high

Product OverviewThe SVF12N60F/S/K is an N-channel enhancement mode power MOS field effect transistor from Silan Microelectronics, utilizing proprietary F-CellTM structure VDMOS technology. This design offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBrand:

Product OverviewThe BSS123 is a high voltage N-channel MOSFET designed for various switching applications. It features a high-density cell design for extremely low RDS(ON), making it suitable for small servo motor controls, power MOSFET gate drivers, and general switching applications. This surface mount device comes in a SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDModel: BSS123Package: SOT-23Case Material: Molded PlasticUL Flammability

HKTQ30P03 Low Voltage P-Channel MOSFETThe HKTQ30P03 is a P-channel MOSFET designed for low power DC to DC converter and load switch applications. It features ultra-low on-resistance, making it highly efficient for these uses. This surface mount device is housed in a PDFN3333 package.Product AttributesBrand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTDOrigin: Not specifiedCase Material: Molded PlasticFlammability Classification: UL 94V-0Marking: Q30P03Email: hkt@heketai.comTechnical

Product Overview The HSK3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements, with full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device. Product Attributes Brand: HSK

Product Overview The HSS3401A is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline. Product Attributes

Product Overview The HD2302 is an N-Channel MOSFET from High Diode Semiconductor, designed as an extreme fast switch. It features excellent RDS(on) and low gate charge, making it suitable for power applications. This TrenchFET Power MOSFET is encapsulated in a SOT-23 plastic package. Product Attributes Brand: High Diode Semiconductor Model: HD2302 Type: N-Channel MOSFET Package: SOT-23 Plastic-Encapsulate Technology: TrenchFET Power MOSFET Technical Specifications Parameter

Product OverviewThe HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a 40V/170A rating with low on-resistance (RDS(ON) = 2.1 m typ. @VGS = 10V) and is 100% avalanche tested for reliability and ruggedness. This device is available in lead-free and green (RoHS compliant) versions.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Certifications: RoHS Compliant, Halogen

Product OverviewThe HOOYI HY1106S is an N-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers reliable and rugged performance with features like Avalanche Rating and Lead Free/Green Device availability, compliant with RoHS standards.Product AttributesBrand: HOOYIModel: HY1106SCertifications: RoHS Compliant, Lead Free, Green Devices AvailablePackage Type: SOP-8Technical SpecificationsParameterSymbolTest

Product Overview This P-Channel Power MOSFET, designed with Trench Technology, offers low RDS(ON), low gate charge, and low gate resistance. It is ideal for load switch and PWM applications, providing a V(BR)DSS of -30V and a continuous drain current (ID) of -4.2A at 25. The device is encapsulated in a SOT-23 plastic package. Product Attributes Brand: HIGH DIODE SEMICONDUCTOR Package Type: SOT-23 Technology: Trench Technology Power MOSFET Technical Specifications Parameter

Product OverviewThe AO3402 is an N-channel, low voltage MOSFET designed for PWM and load switch applications. It features ultra-low on-resistance and is available in a surface-mount SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticUL Flammability Classification Rating: 94V-0Technical SpecificationsParameterSymbolValueUnitConditionsDrain-source voltageVDS30VGate-source voltageVGS12VContinuous drain currentID4ATA=25CID3

Product OverviewThe S8205A is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for synchronous rectifier applications. It features low on-resistance, low gate charge, and is available in a surface mount SOT-23-6 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticClassification Rating: UL 94V-0Email: hkt@heketai.comTechnical SpecificationsParameterSymbolMinTypMaxUnitConditionsDrain-Source breakdown voltageV(BR

Product Overview The HSM3202 is a dual N-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density

Product Overview The 2N7002K is a high-density, N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a low RDS(on), high saturation current capability, and is rugged and reliable. This MOSFET is ESD protected and suitable for load switching in portable devices and DC/DC converters. Product Attributes Brand: High Diode Semiconductor Product Type: N-Channel MOSFET Marking: 2N7002K Package: SOT-23 Plastic-Encapsulated Technical

Product Overview This 20V N-Channel MOSFET, housed in a SOT-23 package, utilizes Trench Technology for low on-resistance (RDS(on)) and low gate charge. It features ESD protection and is suitable for applications such as load switching and DC/DC converters. The device is RoHS compliant. Product Attributes Brand: HIGH DIODE SEMICONDUCTOR Package Type: SOT-23 Technology: Trench Technology Power MOSFET Certifications: RoHS COMPLIANT Technical Specifications Parameter Symbol Test