Single FETs, MOSFETs
Low Gate Charge N Channel Enhancement Mode MOSFET Guangdong Hottech 8205A with High Current Handling
Product OverviewThe 8205A is a N-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. This device is well-suited for battery protection and other switching applications, ...
electronic switching with Guangdong Hottech HKTG50N03 N channel MOSFET featuring fast switching speed
Product OverviewThe HKTG50N03 is an N-channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speed, and is easily designed for drive circuits and paralleling. This MOSFET is suitable for various electronic designs requiring reliable and high...
dual N channel MOSFET HUASHUO HSM3206 featuring fast switching and RoHS compliance for power electronics design
Product Overview The HSM3206 is a dual N-channel, 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is ...
Load Switch N Channel MOSFET HUASHUO HSS2012 Featuring High Cell Density Trench Design and Switching
Product Overview The HSS2012 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super low gate ...
switching P channel mosfet HUASHUO HSCE1218 with low gate charge and high cell density trench design
Product Overview The HSCE1218 is a P-channel, 12V, fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has ...
150V Drain Source Voltage N Channel MOSFET HUASHUO HSY1502 with High Cell Density Trench Technology
Product Overview The HSY1502 is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 150V drain-source voltage and a super low RDS(ON) due to its advanced high cell density Trench technology. Key advantages include 100% EAS guaranteed and availability of a ...
Hangzhou Silan Microelectronics SVF12N60F power MOSFET optimized for DC DC converters and AC DC power supplies
Product OverviewThe SVF12N60F/S/K is an N-channel enhancement mode power MOS field effect transistor from Silan Microelectronics, utilizing proprietary F-CellTM structure VDMOS technology. This design offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse ...
Power MOSFET gate driver and switching device Guangdong Hottech BSS123 N channel MOSFET in SOT 23 package
Product OverviewThe BSS123 is a high voltage N-channel MOSFET designed for various switching applications. It features a high-density cell design for extremely low RDS(ON), making it suitable for small servo motor controls, power MOSFET gate drivers, and general switching applications. This surface ...
Low Voltage P Channel MOSFET Guangdong Hottech HKTQ30P03 for Load Switch and Converter Designs
HKTQ30P03 Low Voltage P-Channel MOSFETThe HKTQ30P03 is a P-channel MOSFET designed for low power DC to DC converter and load switch applications. It features ultra-low on-resistance, making it highly efficient for these uses. This surface mount device is housed in a PDFN3333 package.Product ...
200V P channel MOSFET HUASHUO HSK3P20 with trench technology and full function reliability approval
Product Overview The HSK3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements, with ...
P channel MOSFET HUASHUO HSS3401A fast switching 30V device with trench technology and low gate charge
Product Overview The HSS3401A is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements ...
TrenchFET Power MOSFET High Diode HD2302 N Channel with Low Gate Charge and Fast Switching Capability
Product Overview The HD2302 is an N-Channel MOSFET from High Diode Semiconductor, designed as an extreme fast switch. It features excellent RDS(on) and low gate charge, making it suitable for power applications. This TrenchFET Power MOSFET is encapsulated in a SOT-23 plastic package. Product ...
Power Management N Channel MOSFET HUAYI HY1106S with Low RDS ON and RoHS Compliance in SOP 8 Package
Product OverviewThe HOOYI HY1106S is an N-Channel Enhancement Mode MOSFET designed for power management applications, particularly in DC/DC converters. It offers reliable and rugged performance with features like Avalanche Rating and Lead Free/Green Device availability, compliant with RoHS standards...
Power transistor HUAYI HYG023N04LS1P N Channel MOSFET 40V 170A low on resistance for power devices
Product OverviewThe HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a 40V/170A rating with low on-resistance (RDS(ON) = 2.1 m typ. @VGS = 10V) and is 100% avalanche tested for reliability and ruggedness. This device is ...
Trench Technology P Channel MOSFET High Diode 3407 with Low Gate Charge and Continuous Drain Current
Product Overview This P-Channel Power MOSFET, designed with Trench Technology, offers low RDS(ON), low gate charge, and low gate resistance. It is ideal for load switch and PWM applications, providing a V(BR)DSS of -30V and a continuous drain current (ID) of -4.2A at 25. The device is encapsulated ...
Low voltage n channel mosfet Guangdong Hottech AO3402 with ultra low on resistance in sot 23 package
Product OverviewThe AO3402 is an N-channel, low voltage MOSFET designed for PWM and load switch applications. It features ultra-low on-resistance and is available in a surface-mount SOT-23 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticUL Flammabili...
Low On Resistance and Low Gate Charge Guangdong Hottech S8205A Dual N Channel Field Effect Transistor
Product OverviewThe S8205A is a Dual N-Channel Enhancement Mode Field Effect Transistor designed for synchronous rectifier applications. It features low on-resistance, low gate charge, and is available in a surface mount SOT-23-6 package.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO....
High cell density trench technology MOSFET HUASHUO HSM3202 dual N channel 30V fast switching device
Product Overview The HSM3202 is a dual N-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product ...
Low RDS on N Channel MOSFET High Diode 2N7002K ideal for load switching and DC DC converter circuits
Product Overview The 2N7002K is a high-density, N-Channel MOSFET designed for voltage-controlled small signal switching applications. It features a low RDS(on), high saturation current capability, and is rugged and reliable. This MOSFET is ESD protected and suitable for load switching in portable ...
20V N Channel MOSFET Featuring Low Gate Charge and ESD Protection High Diode 2300 for Load Switching
Product Overview This 20V N-Channel MOSFET, housed in a SOT-23 package, utilizes Trench Technology for low on-resistance (RDS(on)) and low gate charge. It features ESD protection and is suitable for applications such as load switching and DC/DC converters. The device is RoHS compliant. Product ...
