Single FETs, MOSFETs
Fast switching MOSFET HUASHUO HSL0107 P channel 100V with high cell density trench technology and low RDS
Product Overview The HSL0107 is a P-channel, 100V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a green version. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Technology: Advanced high cell
Trench technology p channel mosfet HUASHUO SI2305 with low gate charge and excellent rdson performance
Product Overview The SI2305 is a P-channel, 20V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, a green device option, and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi
650V N Channel Super Junction Power MOSFET HUAKE HCF65R1K0 for High Frequency Switching Applications
Product OverviewThe HCF65R1K0 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching mode power supplies and active power factor correction applications.Product AttributesBrand: HUAKE semiconductorsProduct Code: HCF65R1K0Version: 1.0Technical SpecificationsSymbolParameterTest
Fast Switching N Channel MOSFET HUASHUO HSH4070 Featuring Advanced Trench Technology for Performance
Product Overview The HSH4070 is an N-Channel Fast Switching MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing applications. This RoHS and Halogen-Free compliant component is 100% UIS Tested for reliability. Product Attributes Brand: HSH Type: N-Channel MOSFET Switching Speed: Fast Certifications: RoHS
Power MOSFET Hangzhou Silan Microelectronics SVF13N50F N Channel Device for Switching Power Supplies
Product DescriptionThe SVF13N50T/F/FG/PN is an N-channel enhanced high-voltage power MOS field-effect transistor manufactured using Silan's F-CellTM planar high-voltage VDMOS process technology. Its advanced process and strip cell design structure provide low on-resistance, excellent switching performance, and high avalanche breakdown capability. This product is widely applicable in AC-DC switching power supplies, DC-DC converters, and high-voltage H-bridge PWM motor drivers
P Channel MOSFET HUASHUO HSM4113 Featuring Super Low Gate Charge and Excellent Switching Performance
Product Overview The HSM4113 is a P-Channel Fast Switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key benefits include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P
HUAKE SMF5N60 600V N Channel MOSFET optimized for high frequency switching and power factor correction
Product OverviewThe SMF5N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a continuous drain current of 5.0A, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.Product AttributesBrand: HUAKE semiconductorsProduct Type: N-Channel MOSFETModel: SMF5N60Voltage
High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications
Product Overview The HSU3018B is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology
N channel Fast Switching MOSFET HUASHUO HSL1N25 with RoHS certification and Green Product compliance
Product Overview The HSL1N25 is a high-performance N-channel Fast Switching MOSFET featuring an N-ch 250V rating and extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and
power transistor Hangzhou Silan Microelectronics SVF7N60CF with TO 220F 3L package and 7 amp rating
Product OverviewThe SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect transistor developed using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances performance by minimizing on-state resistance, improving switching characteristics, and providing superior high-energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers
N Channel 4A 600V Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAF for AC DC and DC DC Power Conversion
Product OverviewThe SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process minimizes on-state resistance, enhances switching performance, and provides superior high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product
trenched N channel MOSFET HUASHUO HSBA3016 with 100 percent EAS guaranteed full function reliability
Product Overview The HSBA3016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, making it suitable for demanding applications. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET Technology: Advanced
Trenched n channel mosfet HUASHUO HSP6040 featuring high cell density and excellent cdv dt effect decline
Product Overview The HSP6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent Rds(on) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
N channel MOSFET HUASHUO HSH200N02 featuring trench technology and full function reliability approval
Product Overview The HSH200N02 is a high-performance N-channel MOSFET featuring an advanced high cell density Trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is designed for power switching applications and provides excellent Cdv/dt effect decline. Product Attributes Brand: HSH
power conversion P channel MOSFET HUASHUO HSBA3119 featuring trench technology and high cell density
Product Overview The HSBA3119 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench
Fast switching MOSFET HUASHUO HSP0026 featuring high cell density trench technology and low conduction losses
Product Overview The HSP0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench
60V fast switching P channel MOSFET HUASHUO HSH6117 trench technology for synchronous buck converters
Product Overview The HSH6117 is a P-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Power management MOSFET HUASHUO HSBA3056 N Channel 30V Fast Switching with advanced Trench technology
Product Overview The HSBA3056 is a N-Channel 30V Fast Switching MOSFET designed for efficient power management. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop computers, isolated DC/DC converters in telecom and industrial applications, and general DC/DC converters. It is 100% EAS guaranteed and available as a Green Device. Product Attributes
trench MOSFET HUASHUO HSK12N02 featuring low RDS ON and high cell density for power switching solutions
Product Overview The HSK12N02 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This fast-switching MOSFET offers super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology. It meets RoHS and Green Product requirements with full function reliability approval. Product Attributes Brand: HS-Semi Product Line: HSK12N02
High cell density trench technology MOSFET HUASHUO HSM2202 dual N channel 20V fast switching device
Product Overview The HSM2202 is a dual N-channel 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Certificat
