Single FETs, MOSFETs

Product Overview The HSBA4206 is a dual N-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDSON and gate charge, making it suitable for most synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS Product Type: Dual N-Channel MOSFETs Certifications: RoHS, Green Product Reliability:

Product Overview The HSU4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSU4903 series meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability. Product Attributes Brand: HS-Semi Technology: Advanced high cell density Trench technology

Product Overview The HSBB8008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It offers super low gate charge and excellent CdV/dt effect decline, leveraging advanced high cell density Trench technology for fast switching performance. Product

Product Overview The HSBB02P15 is a P-channel 150V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed. It is available as a Green Device and boasts super low gate charge with excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product Type:

Product Overview The HSU3016 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product OverviewThe HYG400N15NS1P&B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a 150V/40A rating with a low on-resistance of 34m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, ensuring reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant, Lead-Free, Green Devices

Product DescriptionThe SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product

Product Overview The 4953 is a P-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for load switch and PWM applications, providing high power and current handling capabilities. Product Attributes Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD Product Name: 4953 Certifications: Lead free product is acquired Package: SOP-8

Product Overview The HSU15810C is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 100V breakdown voltage and is optimized for fast switching characteristics. This MOSFET is suitable for general applications requiring efficient power management. Product Attributes Brand: HS-Semi Model Series: HSU15810C Channel Type: N-Channel Switching Type: Fast Switching Technical Specifications Parameter Condition Symbol Min Typ Max Unit Drain

Product OverviewThis N-CHANNEL Power MOSFET offers high performance with a 500V maximum drain-source voltage and 5A continuous drain current. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. The TO-252 package is constructed from molded plastic with UL flammability 94V-0 rating.Product AttributesBrand: SHENZHEN HOTTECH ELECTRONICS CO.,LTDModel Marking: D4N50 A HKTD4N50Origin: Shenzhen, ChinaMateri

Product Overview The HSBB15N15S is a high-performance N-channel MOSFET featuring an N-Ch 150V rating and fast switching capabilities. It utilizes an advanced high cell density Trench technology, offering excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate

Product Overview The HSW6113 is a P-channel, 60V fast-switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include a green device availability, super low gate charge, and excellent CdV/dt effect decline, leveraging

Product OverviewThe HKTD70N04 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is housed in a TO-252 package, offering a robust solution for power management needs.Product AttributesBrand: HOTTECHOrigin: SHENZHEN HOTTECH ELECTRONICS CO.,LTDMaterial: Molded PlasticFlammability: UL 94V-0Marking: D70N04Techn

SVD1055SA N/P Channel Enhancement Mode Field Effect TransistorThe SVD1055SA is an N/P channel enhancement mode power MOSFET manufactured using Silan Microelectronics' low-voltage planar VDMOS process technology. Its advanced process and cell structure provide low on-resistance, superior switching performance, and high avalanche breakdown tolerance. This product is widely applicable in electronic ballasts and low-power switching power supplies.Product AttributesBrand: Silan

Product Overview The HSH6115 is a P-channel, 60V fast-switching MOSFET designed for high-efficiency synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi

Product OverviewThe IRLML0060 is an N-channel MOSFET designed for surface mount applications. It features a drain-source voltage of 60V, a continuous drain current of 2.7A, and ultra-low on-resistance (

Product Overview This N-Channel MOSFET, compliant with RoHS 3, features a 30V drain-source voltage and low on-resistance, making it ideal for portable equipment due to its low voltage drive capability. It offers fast switching speeds and easily designed drive circuits, facilitating parallel configurations. Applications include interfacing and switching. Product Attributes Compliance: RoHS 3 Semiconductor Type: N-Channel MOSFET Diode Type: High Diode Marking: ABSOLUTE MAXIMUM

Product Overview The HSBA4094 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it ideal for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This MOSFET is 100% UIS and EAS tested, RoHS and Halogen-Free compliant, ensuring reliability and environmental responsibility. Product Attributes Brand: HS-Semi Model: HSBA4094 Type

Product OverviewThis document details various semiconductor components, including MOSFETs and diodes, presented in different package types such as TO-251-3S, TO-252-2L, TO-251-3L, and others. It provides pin configurations (S, G, D) and outlines technical specifications for these components, likely intended for use in electronic circuits and power management applications.Product AttributesBrand: Not specifiedOrigin: Not specifiedMaterial: Not specifiedColor: Not specifiedCert

IRLML6302 P-Channel Power MOSFETThe IRLML6302 is a P-Channel Power MOSFET featuring GenerationV technology, offering ultra-low on-resistance and a low profile (