Single FETs, MOSFETs
High cell density trench technology MOSFET HUASHUO HSBA6224 dual N channel 60V fast switching device
Product Overview The HSBA6224 is a dual N-channel 60V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product ...
650V N Channel MOSFET HUAKE SMF5N65 with 5A continuous drain current and avalanche tested reliability
Product OverviewThe SMF5N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers a continuous drain current of 5.0A at 25C, low gate charge, low Crss, 100% avalanche tested, fast ...
High cell density trench technology P channel MOSFET HUASHUO HSBB2627 designed for power conversion
Product Overview The HSBB2627 is a P-channel MOSFET featuring high cell density and trenched technology, designed to offer excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with full functional reliability approval. ...
High Cell Density Trenched MOSFET HUASHUO HSBA4006 Offering Fast Switching and Low RDS ON for Power Electronics
Product Overview The HSBA4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with ...
High cell density trench technology P channel mosfet HUASHUO HSM4435 with 30 volt rating and low gate charge
Product Overview The HSM4435 is a P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
P channel 30V fast switching MOSFET HUASHUO HSM3115 ideal for synchronous buck converter applications
Product Overview The HSM3115 is a P-channel 30V fast switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
650V N Channel MOSFET HUAKE SMF14N65 featuring low Crss and 100 percent avalanche testing for power electronics
Product OverviewThe SMF14N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche testing, fast switching, and improved dv/dt capability, offering a ...
Low On Resistance N Channel MOSFET HUAKE SMF10N60 Suitable for High Frequency Switching Applications
Product OverviewThe SMF10N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a ...
P channel MOSFET HUASHUO HSH047P06 with 60V drain source voltage and full function reliability approval
Product Overview The HSH047P06 is a P-channel 60V fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS ...
Fast switching P channel MOSFET 40V voltage rating HUASHUO HSL4113 designed for power conversion solutions
Product Overview The HSL4113 is a P-channel, 40V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This RoHS and Green Product compliant MOSFET is 100% EAS guaranteed ...
Trenched N channel MOSFET HUASHUO HSBB3002 offering low R DS ON and gate charge for power conversion
Product Overview The HSBB3002 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
Power MOSFET Hangzhou Silan Microelectronics SVF7N60F for in High Voltage AC DC Power Supply Systems
Product OverviewThe SVF7N60F/S/D is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology ensures minimal on-state resistance, superior switching performance, and enhanced robustness ...
650V N Channel Super Junction Power MOSFET HUAKE HCF65R360 with Low Gate Charge and Fast Switching
Product OverviewThe HCF65R360 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high frequency switching mode power supplies and active power ...
HSCB20D03 Dual P Channel MOSFET with Advanced Trench Technology and Excellent C dv dt Effect Decline
Product Overview The HSCB20D03 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements and offers super low gate charge, excellent Cdv/dt effect decline...
Power Control with HUAKE SMT20N60 600V N Channel MOSFET Featuring Low Gate Charge and High Drain Current
SMT20N60 600V N-Channel MOSFETThe SMT20N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a continuous drain current of 20.0A, a low on-resistance of 350m (typ) at VGS=10V, ...
N Channel Super Junction Power MOSFET HUAKE HCD65R600 650V with Fast Switching and Low Crss Characteristics
Product OverviewThe HCD65R600 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high-frequency switching mode power supplies and active power ...
Power Management N Channel MOSFET HUASHUO HSU6066 with Fast Switching and 60 Volt Drain Source Voltage
Product Overview The HSU6066 is an N-Channel Fast Switching MOSFET designed for various applications. It offers robust performance with a drain-source voltage of 60V and a continuous drain current of 72A. This device is engineered for fast switching capabilities, making it suitable for power ...
Fast switching dual P channel MOSFET HUASHUO HSM3303 30V with excellent CdV dt effect and RoHS compliance
Product Overview The HSM3303 is a dual P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% ...
Fast Switching P Channel MOSFET HUASHUO HSH30P15 with Low Gate Charge and High Cell Density Design
Product Overview The HSH30P15 is a P-Channel Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS guaranteed and ...
High Cell Density Dual N channel Fast Switching MOSFET HUASHUO HSCA2030 with Excellent Gate Charge Characteristics
Product Overview The HSCA2030 is a high-performance dual N-channel Fast Switching MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for most small power switching and load switch applications. This MOSFET meets RoHS and Green ...
