Single FETs, MOSFETs
P Channel Enhancement Mode MOSFET HUAYI HY15P03C2 for High Frequency Buck Converters and Power Tools
Product OverviewThe HY15P03C2 is a single P-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, networking DC-DC power systems, and power tool applications. It features low on-state resistance (RDS(ON)) of 4.8m typ. at VGS=-10V and 6.8m typ. at VGS=-4.5V, along with a reliable and rugged design. Halogen-free and RoHS compliant devices are available.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Halogen Free (RoHS
Power supply MOSFET HUAKE SMF2N60 600V N Channel with low gate charge and 100 percent avalanche tested performance
Product OverviewThe SMF2N60 is a 600V N-Channel MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching mode power supplies and active power factor correction applications.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMF2N60Document Version: B/0Document Date: 2017.08Technical SpecificationsParameterSymbolTest
P channel MOSFET HUASHUO HSP110P04 featuring high cell density and low gate charge for fast switching
Product Overview The HSP110P04 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It features super low gate charge, excellent Cdv/dt effect decline, and is available as a Green Device. Product Attributes
synchronous buck converter P channel MOSFET HUASHUO HSH100P06 with full function reliability approval
Product Overview The HSH100P06 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDSON and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET Certifications: RoHS, Green Product Reliability: 100% EAS
30 volt p channel mosfet HUASHUO HSU60P03 featuring low gate charge and excellent cdvdt effect for power supply circuits
Product Overview The HSU60P03 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This RoHS and Green Product compliant MOSFET is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P-Ch MOSFET
HUASHUO HSST3139 p channel mosfet featuring fast switching speed and low rds on for power conversion
Product Overview The HSST3139 is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. Key features include super low gate charge, low threshold voltage, and suitability for high-side switching. Product Attributes Brand: HS
Fast switching p channel mosfet huashuo hss6107 60 volt with green device compliance and low gate charge
Product Overview The HSS6107 is a P-channel 60V fast-switching MOSFET featuring high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This product meets RoHS and Green Product requirements and is available as a Green Device. Key advantages include 100% EAS Guaranteed, super low gate charge, and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product
power switching P channel MOSFET HUASHUO HSS2P10 featuring trench technology and compact SOT 23 package
Product Overview The HSS2P10 is a P-channel Fast Switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a SOT-23 package. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET
30V P channel MOSFET HUASHUO HSU100P03 featuring fast switching and low gate charge trench technology
Product Overview The HSU100P03 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench
HYG065N07NS1D MOSFET with 70 Volt Drain Source Voltage and 70 Ampere Continuous Drain Current Rating
Product OverviewThe HYG065N07NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It features low on-resistance (RDS(ON)= 6m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged construction. Available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYMEXTAOrigin: ChinaCertifications: RoHS Compliant, Halogen FreeTechnical SpecificationsModelPackage
synchronous buck converter MOSFET HUASHUO HSCB3014 with trenched N channel and low conduction losses
Product Overview The HSCB3014 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed, ensuring full function reliability. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET Technology: Advanced high cell density Trench technology
Durable Single N Channel Enhancement Mode MOSFET HUAYI HYG045N03LA1C2 with Low On State Resistance
Product OverviewThe HYG045N03LA1C2 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-state resistance (RDS(ON)) at different gate-source voltages, 100% avalanche tested, and a reliable, rugged construction. Halogen-free options are available.Product AttributesBrand: HUAYIOrigin: ChinaCertifications: RoHS compliant, Halogen freeTechnical SpecificationsModelFeatureParameterRating UnitMinTyp.MaxTest ConditionsHYG045N03LA1C2Single
650V N Channel MOSFET HUAKE SMF8N65 featuring low Crss and avalanche energy for switching power supplies
Product OverviewThe SMF8N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers excellent performance with low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMF8N65Date: 2017.08Technical SpecificationsSymbolParameterTest ConditionsMinTypMaxUnitAbsolute
Switching Solutions HUASHUO HSU4002 N Channel MOSFETs with Low Gate Charge and High Current Capacity
HSU4002 N-Ch 40V Fast Switching MOSFETs The HSU4002 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. These MOSFETs offer fast switching capabilities and meet RoHS and Green Product requirements, with 100% EAS guaranteed for reliable performance. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench
600V N Channel MOSFET HUAKE SMF8N60 optimized for switching mode power supplies and power factor correction
Product OverviewThe SMF8N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering efficient and reliable performance.Product AttributesBrand: HUAKE semiconductorsProduct Type: N-Channel MOSFETModel: SMF8N60Package: TO-220FTechnical SpecificationsSymbolPar
Dual P channel 30V fast switching MOSFET HUASHUO HSM4963 for synchronous buck converter applications
Product Overview The HSM4963 is a dual P-channel, 30V fast-switching MOSFET designed for high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. The device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It provides super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Certifications:
Fast switching N channel MOSFET HUASHUO HSM20N02 designed for battery protection and power management
Product Overview The HSM20N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for applications such as battery protection and power management. Product Attributes Brand: HS-Semi
Power Management MOSFET HUAYI HYG120P06LR1D P Channel Device with 55 Ampere Current Rating and RoHS
HYG120P06LR1D/U/V P-Channel MOSFET The HYG120P06LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for power management applications. It offers a robust and reliable solution with key features including a -60V/-55A rating, low on-resistance (RDS(ON) = 12.5m typ. @ VGS = -10V), and 100% avalanche testing. This device is suitable for DC/DC converters, load switching, and motor control applications. Halogen-free and Green (RoHS compliant) options are available. Product
Low On Resistance Dual N Channel MOSFET HYG090ND06LS1C2 with High Current Capability and Reliability
Product OverviewThe HYG090ND06LS1C2 is a Dual N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance of 8.0 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. This device is available in Halogen Free and Green (RoHS Compliant) versions.Product AttributesBrand: HYG (Huayi Microelectronics Co., Ltd.)Origin: ChinaCertifications: RoHS Compliant, Halogen
Power MOSFET Hangzhou Silan Microelectronics SVF2N60RM 600V 2A Low Gate Charge Fast Switching Device
Product Overview The SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced technology ensures minimal on-state resistance, superior switching performance, and robust high-energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers. Product Attributes Brand: Silan
