Single FETs, MOSFETs
Fast switching trench technology p channel mosfet huashuo ao3407a suitable for power switching needs
Product Overview The AO3407A is a P-channel, 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for various small power switching and load switch applications. This device meets RoHS and Green Product requirements ...
80 Amp N Channel MOSFET HUASHUO HSH80N20 200 Volt Suitable for Buck Converter Applications
Product Overview The HSH80N20 is a high-performance N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed ...
P Channel MOSFET HUASHUO HSBA0139 with Low Gate Charge and Excellent Continuous Drain Current Rating
Product Overview The HSBA0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed ...
power conversion N channel MOSFET HUASHUO HSH044N25 with low gate charge and high cell density trench technology
Product Overview The HSH044N25 is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product ...
SOT 23 Package P Channel MOSFET High Diode HD2305 Featuring TrenchFET Technology for Power Circuits
Product Overview The HD2305 is a P-Channel MOSFET from High Diode Semiconductor, designed for power applications. This TrenchFET Power MOSFET, available in a SOT-23 package, offers a drain-source voltage of -12V and low on-state resistance. It is suitable for use in load switching for portable ...
Low Gate Charge 60V N Channel MOSFET HUASHUO HSBB6056 Fast Switching Suitable for Motor Control Systems
Product Overview The HSBB6056 is a N-Channel 60V Fast Switching MOSFET designed with Advanced Trench MOS Technology. It offers low gate charge and low RDS(ON), making it suitable for applications such as Motor Control, DC/DC Converters, and Synchronous Rectifier applications. This device is 100% EAS ...
Robust Switching MOSFET HUAYI HYG065N07NS1P with 2990 Picofarad Input Capacitance and Low On Resistance
Product OverviewThe HYG065N07NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 5.5 m (typ.) at VGS = 10V, 70V/100A rating, and 100% avalanche tested for ...
switching MOSFET HUASHUO HSS1N20 featuring super low gate charge and excellent switching performance
Product Overview The HSS1N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
power MOSFET HUASHUO HSBA3048 featuring 30V rating and advanced trench technology for power management
Product Overview The HSBA3048 is a high-performance N-Channel, 30V Fast Switching MOSFET designed for efficient power management applications. Featuring advanced trench technology, low gate charge, and high current capability, this MOSFET is ideal for power management in desktop computers and DC/DC ...
100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable for Motor Driver Circuits
Product Overview The HSH0076A is a N-Channel 100V Fast Switching MOSFET designed for high-frequency applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS guaranteed performance. This MOSFET is suitable for motor drivers, Battery Management ...
N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain current and RoHS compliant design
HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET The HYG180N10LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 16.5m (typ.) at VGS = 10V and 20m (typ.) at VGS = 6V, a 100V drain-source voltage, and 46A ...
Trench technology based HUASHUO HSM4006 N channel MOSFET for synchronous buck converter applications
Product Overview The HSM4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product ...
Load Switching Device High Diode HD2312 N Channel MOSFET with 20V Drain Source Voltage and 5A Current
Product Overview The HD2312 is a high-performance N-Channel MOSFET in a SOT-23 package, designed for power applications. It features excellent RDS(on) and low gate charge, making it suitable for DC/DC converters and load switching in portable devices. This TrenchFET Power MOSFET offers reliable ...
High Cell Density Trench Technology MOSFET HUASHUO HSM9926 Dual N Channel 20V Fast Switching Device
Product Overview The HSM9926 is a dual N-channel 20V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% ...
power electronics MOSFET HUAKE SMT8N60 600V N Channel with low Crss and fast switching capability
Product OverviewThe SMT8N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt ...
Power Switching Device HUAYI HY3810NA2W N Channel Enhancement Mode MOSFET with Low On Resistance
HY3810NA2W N-Channel Enhancement Mode MOSFET The HY3810NA2W is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages including 100V/180A rating, low on-resistance of 4.2m (typ.) at VGS = 10V, and ...
Load Switch P Channel MOSFET HSS4P06 with 60V Drain Source Voltage and Low Gate Charge Performance
Product Overview The HSS4P06 is a P-Channel 60V fast-switching MOSFET designed for high cell density and excellent RDS(ON) and efficiency. It is ideal for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and offers 100% EAS guaranteed, ...
P Channel Enhancement Mode MOSFET High Diode HD3401 with Low RDS ON and High Current Capability
High Diode Semiconductor HD3401 P-Channel MOSFET Product Overview The HD3401 is a P-Channel Enhancement Mode Field Effect Transistor from High Diode Semiconductor. It features a high dense cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This ...
N Channel MOSFET 100V Fast Switching HUASHUO HSBB0056 with Low Gate Charge and Halogen Free Compliance
Product Overview The HSBB0056 is a N-Channel 100V Fast Switching MOSFET designed for high-speed circuit applications. It offers guaranteed 100% EAS, low RDS(ON), and low gate charge, making it suitable for portable equipment and battery-powered systems. This MOSFET is also RoHS and Halogen-Free ...
HSU15P15 P Channel Fast Switching MOSFET Offering Superior RDS ON and Gate Charge Characteristics
Product Overview The HSU15P15 is a P-Channel Fast Switching MOSFET designed with advanced trench MOSFET technology. It offers excellent RDS(ON) and gate charge, making it suitable for a wide variety of applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed ...
