Single FETs, MOSFETs

Product Overview The AO3407A is a P-channel, 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HS-Semi Product

Product Overview The HSH80N20 is a high-performance N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Product Type: N-Channel Fast Switching MOSFETs Certifications: RoHS, Green Product Reliability: 100% EAS

Product Overview The HSBA0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability. Product Attributes Brand: HS-SMEI Technology: Advanced Trench MOSFET Certifications: RoHS, Green Product Reliability: 100% EAS Guaranteed Technical

Product Overview The HSH044N25 is a high-performance N-channel MOSFET featuring an extreme high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell

Product Overview The HD2305 is a P-Channel MOSFET from High Diode Semiconductor, designed for power applications. This TrenchFET Power MOSFET, available in a SOT-23 package, offers a drain-source voltage of -12V and low on-state resistance. It is suitable for use in load switching for portable devices and DC/DC converters. Key electrical characteristics include a continuous drain current of -4.1A and various on-state resistance values depending on gate-source voltage and

Product Overview The HSBB6056 is a N-Channel 60V Fast Switching MOSFET designed with Advanced Trench MOS Technology. It offers low gate charge and low RDS(ON), making it suitable for applications such as Motor Control, DC/DC Converters, and Synchronous Rectifier applications. This device is 100% EAS Guaranteed and available in a Green Device option. Product Attributes Brand: HS-Semi Technology: Advanced Trench MOS EAS Guaranteed: 100% Availability: Green Device Available

Product OverviewThe HYG065N07NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low on-resistance of 5.5 m (typ.) at VGS = 10V, 70V/100A rating, and 100% avalanche tested for reliability and ruggedness. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYGOrigin: China (Huayi Microelectronics Co., Ltd.

Product Overview The HSS1N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available as a Green Device. Key features include super low gate charge and excellent Cdv/dt effect decline, benefiting from advanced high cell density trench technology.

Product Overview The HSBA3048 is a high-performance N-Channel, 30V Fast Switching MOSFET designed for efficient power management applications. Featuring advanced trench technology, low gate charge, and high current capability, this MOSFET is ideal for power management in desktop computers and DC/DC converters. It is RoHS and Halogen-Free compliant, ensuring environmental responsibility. Product Attributes Brand: HS-Semi Certifications: RoHS and Halogen-Free Compliant

Product Overview The HSH0076A is a N-Channel 100V Fast Switching MOSFET designed for high-frequency applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS guaranteed performance. This MOSFET is suitable for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device version is available. Product Attributes Brand: HS-Semi Technology: Advanced high cell

HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET The HYG180N10LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 16.5m (typ.) at VGS = 10V and 20m (typ.) at VGS = 6V, a 100V drain-source voltage, and 46A continuous drain current. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available (RoHS Compliant). It is particularly suitable for high

Product Overview The HSM4006 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell

Product Overview The HD2312 is a high-performance N-Channel MOSFET in a SOT-23 package, designed for power applications. It features excellent RDS(on) and low gate charge, making it suitable for DC/DC converters and load switching in portable devices. This TrenchFET Power MOSFET offers reliable performance with a Drain-Source Voltage of 20V and a continuous drain current of 5A. Product Attributes Brand: High Diode Semiconductor Package Type: SOT-23 Plastic-Encapsulate MOSFET

Product Overview The HSM9926 is a dual N-channel 20V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key advantages include super low gate charge and excellent CdV/dt effect decline, leveraging advanced high cell density

Product OverviewThe SMT8N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power electronics designs.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMT8N60Document Version: B/0Document

HY3810NA2W N-Channel Enhancement Mode MOSFET The HY3810NA2W is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key advantages including 100V/180A rating, low on-resistance of 4.2m (typ.) at VGS = 10V, and 100% avalanche tested. This device is available in Halogen-Free and Green (RoHS Compliant) options, making it suitable for environmentally conscious designs. It is ideal for use in

Product Overview The HSS4P06 is a P-Channel 60V fast-switching MOSFET designed for high cell density and excellent RDS(ON) and efficiency. It is ideal for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and offers 100% EAS guaranteed, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density trench technology. Product Attributes Brand: HSS (implied by "www.hs-semi.cn") Product

Product Overview The HSBB0056 is a N-Channel 100V Fast Switching MOSFET designed for high-speed circuit applications. It offers guaranteed 100% EAS, low RDS(ON), and low gate charge, making it suitable for portable equipment and battery-powered systems. This MOSFET is also RoHS and Halogen-Free compliant. Product Attributes Brand: HS-Semi Product Type: N-Channel MOSFET Voltage Rating: 100V Switching Speed: Fast Switching Compliance: RoHS and Halogen-Free Technical Specificati

High Diode Semiconductor HD3401 P-Channel MOSFET Product Overview The HD3401 is a P-Channel Enhancement Mode Field Effect Transistor from High Diode Semiconductor. It features a high dense cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability. This MOSFET is suitable for load/power switching and interfacing applications. Product Attributes Brand: High Diode Semiconductor Model: HD3401 Type: P-Channel Enhancement Mode Field

Product Overview The HSU15P15 is a P-Channel Fast Switching MOSFET designed with advanced trench MOSFET technology. It offers excellent RDS(ON) and gate charge, making it suitable for a wide variety of applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Product Technical Specifications Part Number Channel Type Voltage (V) Current