Single FETs, MOSFETs
High cell density complementary MOSFET HUASHUO HSBA4903 series with RoHS and Green Product compliance
Product Overview The HSBA4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4903 series is RoHS and ...
N channel enhancement mode mosfet huayi hy3403p offering switching performance and lead free construction
Product OverviewThe HY3403P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a low on-resistance (RDS(ON)) of 2.2m typ. at VGS=10V and 2.7m typ. at VGS=4.5V, a high continuous drain current of 140A, and is 100% ...
Fast switching MOSFET HUASHUO HSBA100P04 P channel device with low gate charge and high reliability
Product Overview The HSBA100P04 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, ...
Trench N Channel MOSFET Featuring Low Gate Charge HUASHUO HSU8048 Ideal for Synchronous Rectification
Product Overview The HSU8048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous rectification applications. This product meets RoHS and Halogen-Free compliance, with ...
Power Switching MOSFET HUAYI HYG028N10NS1B N Channel Enhancement Mode with 100V and 230A Specifications
Product Overview The HYG028N10NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET from Hymexa, designed for power switching applications. It features a 100V/230A rating with a low on-resistance of 2.6m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ...
30V Dual N Channel MOSFET HSBB3214 Fast Switching with Low Gate Charge and Enhanced CdVdt Performance
Product Overview The HSBB3214 is a dual N-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is ...
20V P channel MOSFET HUASHUO HSW3415 featuring trench technology low gate charge and fast switching for power supplies
Product Overview The HSW3415 is a P-channel, 20V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone ...
Fast Switching 100V Dual N Channel MOSFET HUASHUO HSBA0256 Featuring SGT MOS Technology Green Option
Product Overview The HSBA0256 is a dual N-channel, 100V fast-switching MOSFET from HS-Semi. It features SGT MOS Technology, 100% EAS guaranteed, and fast switching speed, making it suitable for battery-powered systems, portable equipment, and hard switching/high-speed circuits. A green device option ...
Trench Technology Based P Channel MOSFET HUASHUO IRLML6401 20V Fast Switching for Power Applications
Product Overview The IRLML6401 is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has ...
N Channel Enhancement Mode MOSFET HUAYI HY4504P with 250A Current and Low On Resistance Rating
Product OverviewThe HY4504P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a high current capability of 250A and a low on-resistance of 2.3m (typ.) at VGS=10V. Devices are ...
Power Management N Channel MOSFET HUASHUO HSP4048 40V Fast Switching Suitable for DC DC Converters
HSP4048 N-Ch 40V Fast Switching MOSFETs The HSP4048 is an N-channel, 40V fast switching MOSFET designed for high-performance applications. It features advanced trench technology, low gate charge, and high current capability, making it suitable for demanding power management tasks. This MOSFET is ...
P channel 30V fast switching MOSFET HUASHUO HSBA3115 with super low gate charge and trench technology
Product Overview The HSBA3115 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS ...
Trenched N Channel MOSFET HUASHUO HSP120N08 suitable for high current and fast switching requirements
Product Overview The HSP120N08 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, ...
High cell density trenched N channel MOSFET HSK5N04 ideal for synchronous buck converter applications
Product Overview The HSK5N04 is a high cell density trenched N-channel MOSFET offering excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. These fast-switching MOSFETs meet RoHS and Green Product requirements, are 100% EAS guaranteed, and have full ...
Single N Channel Enhancement Mode MOSFET HUAYI HY1603C2 with Avalanche Tested Reliability Features
HY1603C2 Single N-Channel Enhancement Mode MOSFETThe HY1603C2 is a high-performance, single N-Channel enhancement mode MOSFET designed for various switching and power management applications. It offers low on-state resistance (RDS(ON)) of 4.1m (typ.) at VGS = 10V and 5.2m (typ.) at VGS = 4.5V, with ...
P channel MOSFET HUASHUO HSL6115 featuring super low gate charge and excellent CdVdt effect decline
Product Overview The HSL6115 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS ...
Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS
Product Overview The HSY012N10 is a N-Channel 100V Fast Switching MOSFET designed for high-performance applications. Featuring super low RDS(ON) and advanced high cell density SGT MOS technology, this MOSFET offers guaranteed 100% EAS performance. It is ideal for use in motor drivers, UPS systems, ...
Switching MOSFET HUAYI HYG053N10NS1C2 N Channel Enhancement Mode 100V 95A Power Management Component
Product OverviewThe HYG053N10NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high current capability of 100V/95A with a low on-resistance of 4.6 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ...
Power Management MOSFET HUAYI HYG023N03LR1C2 Single N Channel Enhancement Mode for DC DC Converters
Product OverviewThe HYG023N03LR1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-state resistance (RDS(ON)) at various gate-source voltages and is 100% avalanche tested for reliabilit...
Power switching mosfet HUAYI HY19P03B featuring low resistance and high current for power management
Product OverviewThe HY19P03P/B is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It features a high continuous drain current of -90A and low on-state resistance (RDS(ON)) of 4.7m (typ.) at VGS = -10V. This device is 100% avalanche ...
