Single FETs, MOSFETs

Product Overview The HSM3006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approved. Its advanced high cell density trench technology ensures superior performance. Product Attributes Brand: HS-Semi Product Type:

Product Overview The HSBB4072 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench MOS technology, it offers low RDS(on) and is 100% EAS guaranteed. This MOSFET is ideal for use in Synchronous Rectification for SMPS, DC/DC Converters, and Or-ing circuits. It is available as a Green Device. Product Attributes Brand: HS-Semi Technology: Advanced Trench MOS Device Type: N-Channel MOSFET Switching Speed: Fast Environmental:

Product Overview The HSU6006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench

Product Overview The HSS3402A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It features super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology.

Product Overview The HSBA6115 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product OverviewThe HCF65R600 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for high frequency switching mode power supplies and active power factor correction applications.Product AttributesBrand: HUAKE semiconductorsProduct Series: HCF65R600Channel Type: N-ChannelTechnology: Super JunctionVersion: 1

Product Overview The HSBB4113 is a P-channel fast-switching MOSFET featuring high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. It is designed for high efficiency and performance in demanding power management scenarios. Product Attributes Brand: HS-Semi Product Type: P-Channel MOSFET

HY3010D/U/V N-Channel Enhancement Mode MOSFETThe HY3010D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various power applications. It features a high voltage rating of 100V and a continuous drain current of 60A, with a low on-state resistance of 10m (typ.) at VGS = 10V. This device is 100% avalanche tested, offering reliability and ruggedness. Available in Halogen Free and Green (RoHS Compliant) versions, it is suitable for portable equipment,

Product Overview The HSS2302A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. It features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology.

HSBA30N20 N-Ch 200V Fast Switching MOSFETs Product Overview The HSBA30N20 is a high-performance N-channel MOSFET designed for fast switching applications. Featuring proprietary new trench technology, it offers a low on-resistance of 43m typ. at VGS=10V and a low gate charge to minimize switching losses. Its fast recovery body diode makes it suitable for synchronous rectification in SMPS, motor control, and hard switching high-speed circuits. With a drain-source voltage rating

Product Overview The HSU20N15A is a high-performance N-channel MOSFET featuring an N-Ch 150V rating and fast switching capabilities. Designed with extreme high cell density, it offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt

Product OverviewThe HYG050N10NS1P is an N-Channel Enhancement Mode MOSFET designed for power switching applications and motor control. It features a high continuous drain current of 100V/135A, a low on-state resistance of 4.4m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability. Lead-free and green devices are available, compliant with RoHS standards.Product AttributesBrand: HYG (Huayi Microelectronics)Origin: ChinaMaterial: Lead-Free and Green Devices Available

HYG055N08NS1C2 N-Channel Enhancement Mode MOSFETThe HYG055N08NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers low on-resistance (RDS(ON)=4.8 m typ. @ VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS compliant versions are available.Product AttributesBrand: HYGPackage: PPAK5*6-8LCertifications: RoHS Compliant, Halogen-FreeTechnical

HYG110N11LS1C2 Single N-Channel Enhancement Mode MOSFET Product Overview The HYG110N11LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a low on-resistance (RDS(ON)) of 9.8 m typ. at VGS = 10V and 14.5 m typ. at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, making it RoHS compliant. This MOSFET is suitable for DC-DC power management, quick charger applications,

Product Overview The HSBB3313 is a dual P-channel, 30V fast switching MOSFET designed for high-efficiency applications. Featuring advanced Trench MOS Technology, these MOSFETs offer 100% EAS guaranteed performance and are available in a Green Device option. Ideal for battery-powered systems and portable equipment, the HSBB3313 provides reliable and fast switching capabilities. Product Attributes Brand: HS Device Type: Dual P-Channel MOSFET Technology: Advanced Trench MOS

Product Overview The HSU4016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full functional reliability approval. Product Attributes Brand: HS-Semi Product Type: N-Ch Fast Switching MOSFETs Certifications: RoHS, Green Product Reliability: 100%

Product Overview The HSU15N10 is a high-performance N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It features extreme high cell density, providing excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench

Product Overview The HSBB3052 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. It offers super low gate charge and excellent CdV/dt effect decline due to its advanced high cell density trench technology. Product Attributes Brand: HS-Semi Certificati

Product OverviewThe HYG016N04LS1W is an N-Channel Enhancement Mode MOSFET designed for switching applications, inverters, and power tools. It features low on-state resistance (RDS(ON)) of 1.2 m (typ.) at VGS = 10V and 1.6 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. This device is Halogen-Free and Green (RoHS Compliant).Product AttributesBrand: HYM (Huayi Microelectronics)Origin: ChinaCertifications: RoHS Compliant, Halogen-FreePackage Type:

HSS2302B N-Channel 20V Fast Switching MOSFETs Product Overview The HSS2302B is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in most low-power switching and load switch applications. It meets RoHS and Green Product requirements and offers super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology. This MOSFET is ideal for applications requiring fast switching capabilities.