Single FETs, MOSFETs
650V N Channel Super Junction MOSFET HUAKE HCF65R260 with Low RDSon and 100 Percent Avalanche Tested
Product OverviewThe HCF65R260 is a 650V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a low RDS(on) of 260m at VGS=10V, low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability. This MOSFET is designed for high-frequency switching ...
Low on resistance MOSFET HUAYI HYG025P03LQ1B for inverter systems motor control and power management
Product OverviewThe HYG025P03LQ1P/B is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in inverter systems and motor control. It features low on-state resistance (RDS(ON) as low as 2.3 m typ. at VGS = -10V), 100% avalanche tested, and is ...
Dual N channel 60 volt mosfet HUASHUO HSM1562 with fast switching speed and RoHS certified green device availability
Product Overview The HSM1562 is a dual N-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is ...
P Channel MOSFET HXY MOSFET AO4485 with Low RDS ON and Gate Voltage Operation Starting at 2.5 Volts
Product OverviewThe AO4485 is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications.Product AttributesBra...
Low rdson dual n channel fast switching mosfet huashuo hscc8204 designed for lithium ion battery pack applications
Product Overview The HSCC8204 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. It is specifically suitable for Lithium-ion battery pack applications. This product meets RoHS and Green Product requirements and has full function ...
Dual N channel 100V fast switching MOSFET HUASHUO HSM0204 with low gate charge and trench technology
Product Overview The HSM0204 is a dual N-channel, 100V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product ...
N Channel MOSFET HUASHUO HSU6048 Featuring Trench Technology and Superior Switching Characteristics
Product Overview The HSU6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% ...
High cell density trenched MOSFET HUASHUO HSBB3303 optimized for fast switching and power conversion
Product Overview The HSBB3303 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with ...
N Channel MOSFET 650V Voltage Rating Featuring HUAKE SMF10N65 with Low Crss and Fast Switching Speed
Product OverviewThe SMF10N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, ...
N Channel MOSFET 120V HUASHUO HSU48N12A Fast Switching Component for TV Converters and Power Systems
HSU48N12A N-Channel 120V Fast Switching MOSFET The HSU48N12A is a high-performance N-channel MOSFET designed for fast switching applications. Leveraging Advanced Trench MOS Technology, this device offers 100% EAS Tested and is available as a Green Device. It is ideal for power management in TV ...
N Channel Enhancement MOSFET HUAYI HY4004A 40V 208A Low On Resistance for Power Management Solutions
Product OverviewThe HY4004W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high current capability (40V/208A) with a low on-resistance (RDS(ON)= m typ. @ VGS=10V), ensuring efficient operation. This device is reliable, rugged, and 100% ...
High cell density complementary MOSFET HUASHUO HSM4614 offering fast switching and power efficiency
Product Overview The HSM4614 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density, delivering excellent RDS(ON) and gate charge for synchronous buck converter applications. These devices meet RoHS and Green Product requirements and are 100% EAS ...
High Cell Density Trench N Channel MOSFET HUASHUO HSD6016 Designed for Industrial Switching Solutions
Product Overview The HSD6016 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS ...
P channel MOSFET HUASHUO HSM6117 with 100 percent EAS guaranteed and excellent CdV dt effect decline
Product Overview The HSM6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, ...
Low Gate Charge N Channel MOSFET HUAKE HSD60N10 100V Suitable for Active Power Factor Correction
Product OverviewThe HSD60N10 is a 100V N-Channel MOSFET from HUAKE Semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features a low gate charge, low Crss, 100% avalanche testing, fast switching, and improved dv/dt capability...
Low RDS ON 100V N Channel MOSFET HUASHUO HSH15810 Designed for High Frequency Switching and Battery Management
Product Overview The HSH15810 is a N-Channel, 100V fast switching MOSFET designed for high-frequency applications. It features a super low RDS(ON) and utilizes advanced high cell density Trench technology. This device is 100% EAS Guaranteed and is available as a Green Device. Key applications ...
P Channel Fast Switching MOSFET HUASHUO HSH0139 with Low Gate Charge and Excellent RDS ON Performance
Product Overview The HSH0139 is a P-Channel Fast Switching MOSFET designed with advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for a wide variety of applications and meets RoHS and Green Product requirements. It is 100% EAS guaranteed with full ...
HSU4004 Fast Switching N Channel MOSFET with Excellent CdV dt Effect Decline and Low Gate Charge
Product Overview The HSU4004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG024N03LR1D with TO 252 2L Package and Low On Resistance
Product OverviewThe HYG024N03LR1D is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and a reliable, rugged construction. Halogen-free options are available. ...
synchronous buck converter mosfet HUASHUO HSM3006 with low conduction resistance and high reliability
Product Overview The HSM3006 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
