Single FETs, MOSFETs

HSU0026 N-Ch 100V Fast Switching MOSFETs The HSU0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Product Features: Green Device Available,

Product OverviewThe HYG030N03LQ1D is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) of 2.5 m (typ.) at VGS = 10V and 3.5 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. Its robust design makes it suitable for demanding applications such as battery protection and motor drives.Product AttributesBrand: HYG (Huayi

Product OverviewThe SMF13N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features high current capability (13.0A continuous), low on-resistance (RDS(on) Typ = 380m at VGS=10V), low gate charge, fast switching speeds, and improved dv/dt capability. This MOSFET is 100% avalanche tested and is ideal for use in High Frequency Switching Mode Power Supplies and Active Power Factor Correction circuits.Product

Product OverviewThe HYG067N07NQ1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a 68V/70A rating with a low on-resistance of 6.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It is available in Halogen Free and Green (RoHS Compliant) versions, making it suitable for portable equipment, battery-powered systems, DC-DC converters, and switching applications

Product Overview The HSH6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.

Product Overview The HSBA3004 is a high cell density trenched N-channel 30V Fast Switching MOSFET designed for applications requiring excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. It offers super low gate charge and excellent CdV/dt effect decline, utilizing advanced high cell density Trench technology. Product Attributes Brand: HS-Semi Product Type: N-Channel

Product OverviewThe HYG060N15NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a low RDS(ON) of 5.5m (typ.) at VGS = 10V, 150V/175A rating, and is 100% avalanche tested for reliability. Available in lead-free and green (RoHS compliant) versions, it is suitable for Uninterruptible Power Supply and Motor Control systems.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Material:

Product OverviewThe HY1904C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It offers a 40V/65A rating with low on-resistance (RDS(ON)) of 5.1m (typ.) at VGS = 10V and 6.2m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, rugged, and halogen-free options are available.Product AttributesBrand: HYMECHAOrigin: ChinaMaterial:

Product Overview The HSBA3331 is a dual P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench

Product Overview The HSCB0012 is an N-Channel 100V Fast Switching MOSFET designed with Advanced Trench MOS Technology. It offers low Rds(on) and super low gate charge, making it suitable for applications requiring high speed and efficiency. This device is 100% EAS Guaranteed and available in a Green Device option. Key applications include portable equipment, battery-powered systems, and hard switching and high-speed circuits. Product Attributes Brand: HS-Semi Technology:

Product Overview The HSCC2734 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. This product is suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval. It offers low drain-source ON resistance and is available as a green device. Product Attributes Brand: HS-Semi Model: HSCC2734 Certifications: RoHS, Green Product Device Type: Dual N

Product Overview The HSS3400A is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements, featuring a green device option, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density trench technology. Product Attributes Brand: HS-Semi Certifications: RoHS, Green Product Technology: Advanced high

Product OverviewThe HY4008P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in various lead-free and green (RoHS compliant) package options.Product AttributesBrand: HOOYICertifications: RoHS Compliant, Lead Free, Green Devices AvailableTechnical SpecificationsModelPackageDrain-Source Voltage (V)Continuous Drain Current (A) TC

Product Overview The HSK6113 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent Cdv/dt effect decline. Product Attributes Brand: HSK Type: P

Product Overview The HSP60N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Its advanced high cell density Trench technology ensures superior performance and

Product Overview The HSS2P15 is a P-Channel Fast Switching MOSFET designed for 150V applications. It features a fast switching capability, super low gate charge, and excellent CdV/dt effect decline, making it suitable for load switching, power management, LED backlighting, and networking applications. The device utilizes advanced high cell density Trench technology and is 100% EAS Guaranteed. A green device option is available. Product Attributes Brand: HS-Semi Technology:

Product OverviewThe SMF20N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering a typical RDS(on) of 210m at VGS=10V.Product AttributesBrand: HUAKE semiconductorsProduct Type: N-Channel MOSFETTechnical SpecificationsParameterSymbolTest ConditionsMinTyp

HSU4115 P-Ch 40V Fast Switching MOSFETs Product Overview The HSU4115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, featuring super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product Attributes

Product Overview The HSU90N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge, suitability for battery protection, and power management. Product

Product OverviewThe HYG023N04NR1D is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for high-performance applications. It features a low on-state resistance of 2.3 m (typ.) at VGS = 10V, 45V/140A rating, and is 100% avalanche tested for reliability. This rugged component is suitable for load switching and battery protection circuits. Halogen-free options are available.Product AttributesBrand: HymexaOrigin: China (Huayi Microelectronics Co., Ltd.)Material: