Single FETs, MOSFETs
P Channel MOSFET HYG400P10LR1D Featuring 100V 40A Drain Current and Low RDS ON for DC DC Converters
Product OverviewThe HYG400P10LR1D/U/V is a P-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a -100V/-40A rating, low on-resistance (RDS(ON) as low as 42m typ. at VGS = -10V), 100% avalanche tested, and a reliable, rugged construction. This device is available ...
HYG030N03LQ1D MOSFET Single N Channel Device with TO 252 2L Package and Performance Characteristics
Product OverviewThe HYG030N03LQ1D is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) of 2.5 m (typ.) at VGS = 10V and 3.5 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, reliable, and rugged, with ...
HUAKE SMF13N50 N Channel MOSFET designed for high current switching and power supply applications
Product OverviewThe SMF13N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It features high current capability (13.0A continuous), low on-resistance (RDS(on) Typ = 380m at VGS=10V), low gate charge, fast switching speeds, and improved dv/dt ...
HYG067N07NQ1D 68 Volt 70 Amp N Channel MOSFET with Low On Resistance and Avalanche Energy Capability
Product OverviewThe HYG067N07NQ1D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a 68V/70A rating with a low on-resistance of 6.8m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. It ...
30V N channel MOSFET HUASHUO HSBA3004 with high cell density trench design and super low gate charge
Product Overview The HSBA3004 is a high cell density trenched N-channel 30V Fast Switching MOSFET designed for applications requiring excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. It ...
N Channel MOSFET HUASHUO HSH6040 Featuring Trench Technology and Low Gate Charge for Power Switching
Product Overview The HSH6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
Low RDS ON N Channel Enhancement Mode MOSFET HYG060N15NS1P for Power Switching Applications 150V 175A
Product OverviewThe HYG060N15NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a low RDS(ON) of 5.5m (typ.) at VGS = 10V, 150V/175A rating, and is 100% avalanche tested for reliability. Available in lead-free and green (RoHS ...
High Frequency MOSFET HUAYI HY1904C2 Designed for Point of Load Converters and Power Tool Systems
Product OverviewThe HY1904C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters, power tool applications, and networking DC-DC power systems. It offers a 40V/65A rating with low on-resistance (RDS(ON)) of 5.1m (typ.) at VGS = 10V and 6...
Fast switching dual P channel MOSFET HUASHUO HSBA3331 30V with low gate charge and trench technology
Product Overview The HSBA3331 is a dual P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and ...
Low Rds on and Fast Switching N Channel MOSFET HUASHUO HSCB0012 100V Suitable for Portable Devices
Product Overview The HSCB0012 is an N-Channel 100V Fast Switching MOSFET designed with Advanced Trench MOS Technology. It offers low Rds(on) and super low gate charge, making it suitable for applications requiring high speed and efficiency. This device is 100% EAS Guaranteed and available in a Green ...
Low RDSON Dual N Channel Fast Switching MOSFET HUASHUO HSCC2734 Designed for Lithium Ion Battery Pack
Product Overview The HSCC2734 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. This product is suitable for Lithium-ion battery pack applications and meets RoHS and Green Product requirements with full function reliability approval. It ...
High cell density trenched N channel MOSFET HUASHUO HSS3400A for small power switching applications
Product Overview The HSS3400A is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This device meets RoHS and Green Product requirements, featuring a green device option, super low gate charge, and ...
Low On Resistance MOSFET HUAYI HY4008B N Channel Enhancement Mode Device for Power Management and Switching
Product OverviewThe HY4008P/M/B/PS/PM is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with low on-resistance and is available in various lead-free and green (RoHS compliant) package options.Product ...
Power switching device HUASHUO HSP60N06 N channel MOSFET with trench technology and low gate charge
Product Overview The HSP60N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This MOSFET meets RoHS and Green ...
60V P channel MOSFET HUASHUO HSK6113 trench technology fast switching excellent RDS ON performance
Product Overview The HSK6113 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100...
High Frequency Switching N Channel MOSFET HUAKE SMF20N50 with Low Crss and Fast Switching Speed
Product OverviewThe SMF20N50 is a 500V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, ...
P Channel Fast Switching MOSFET HUASHUO HSS2P15 for 150V Applications Load Switching Power Management
Product Overview The HSS2P15 is a P-Channel Fast Switching MOSFET designed for 150V applications. It features a fast switching capability, super low gate charge, and excellent CdV/dt effect decline, making it suitable for load switching, power management, LED backlighting, and networking application...
Switching P Channel MOSFET HUASHUO HSU4115 with Low Gate Charge and High Cell Density Trench Design
HSU4115 P-Ch 40V Fast Switching MOSFETs Product Overview The HSU4115 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed ...
fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design
Product Overview The HSU90N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and ...
Fast Switching P Channel MOSFET HUASHUO HSU0139 Offering Excellent CdV dt Effect and RoHS Compliance
Product Overview The HSU0139 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide variety of applications and meets RoHS and Green Product requirements. The device is 100% EAS guaranteed with full ...
