Single FETs, MOSFETs
N Channel MOSFET Fast Switching 100V Device HUASHUO HSL0004 Suitable for Electronic Applications
HSL0004 N-Ch 100V Fast Switching MOSFETs Product Overview The HSL0004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets ...
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching
Product Overview The HSU30N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
Fast switching MOSFET HUASHUO HSBB6115 60V P channel with low gate charge and superior C dv dt effect
Product Overview The HSBB6115 is a P-channel, 60V fast-switching MOSFET designed for synchronous buck converter applications. It features high cell density trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
High cell density N channel MOSFET HUASHUO HSBA8074A suitable for synchronous rectification circuits
Product Overview The HSBA8074A is a high cell density N-channel MOSFET designed for fast switching and synchronous rectification applications. It offers excellent RDS(ON) and gate charge characteristics. This device is RoHS and Halogen-Free compliant, with 100% EAS guaranteed and full function ...
Trenched N Channel MOSFET HUASHUO HSS6014 with High Cell Density and Excellent CdV dt Effect Decline
Product Overview The HSS6014 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
Complementary N channel P channel MOSFET HUASHUO HSM6901 designed for power conversion and low gate charge
Product Overview The HSM6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSM6901 series meets RoHS and ...
N Channel MOSFET HUASHUO HSBB6054 Designed for Synchronous Rectifier and DC DC Converter Applications
Product Overview The HSBB6054 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced trench MOS technology, it offers low gate charge and low RDS(ON) for enhanced efficiency. This device is 100% EAS guaranteed and is available in a green device option. It ...
Fast switching MOSFET HUASHUO HSSX2303 dual P channel 20V with trench technology and low gate charge
Product Overview The HSSX2303 is a dual P-channel, 20V fast switching MOSFET designed for high-density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements with full ...
Fast Switching P Channel MOSFET HUASHUO HSBA8119 80V With Low Gate Charge And Reliability Guarantee
Product Overview The HSBA8119 is a P-channel 80V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, ...
P channel MOSFET HUASHUO HSS3401 featuring 30V drain source voltage and super low gate charge for power switching
Product Overview The HSS3401 is a P-channel, 30V fast switching MOSFET featuring high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements ...
HYG022N10NS1TA MOSFET Featuring 100 Volt Drain Source Voltage and 2.2 Milliohm Typical On Resistance
Product OverviewThe HYG022N10NS1TA is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in inverter and battery management systems. It features a high voltage rating of 100V and a continuous drain current of 249A, with a low on-state ...
Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion
Product Overview The HSCB2307 is a P-channel 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and has ...
HYG035N02KA1C2 MOSFET single N Channel device offering low resistance and high temperature tolerance
Product OverviewThe HYG035N02KA1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers low on-state resistance (RDS(ON)) at various gate-source voltages, 100% avalanche tested, and is known for its reliability and ...
Low RDS on and fast switching 600V N Channel MOSFET HUAKE SMF12N60 for active power factor correction applications
Product OverviewThe SMF12N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, ...
Dual P channel MOSFET HUASHUO HSW6811 20V fast switching suitable for load switch and power circuits
Product Overview The HSW6811 is a dual P-channel, 20V fast switching MOSFET designed for high cell density and excellent RDS(ON) and efficiency. It is ideal for most small power switching and load switch applications. The HSW6811 meets RoHS and Green Product requirements and offers super low gate ...
Fast Switching N Channel MOSFET HUASHUO HSBB4054 Ideal for Synchronous Rectification and Power Systems
Product Overview The HSBB4054 is a N-Channel Fast Switching MOSFET designed for high-efficiency power applications. It features advanced trench technology, low gate charge, and is 100% UIS tested. Key applications include Switched-Mode Power Supplies (SMPS) for synchronous rectification, and DC/DC ...
Low on resistance N Channel MOSFET HUAYI HYG015N03LS2C2 designed for power management and switching
HYG015N03LS2C2 N-Channel MOSFET The HYG015N03LS2C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a low on-resistance of 1.5m (typ.) at VGS = 10V and 2.4m (typ.) at VGS = 4.5V, along with 100% avalanche testing ...
P channel MOSFET HUASHUO HSM05P15 offering 150V drain source voltage and low gate charge for control
Product Overview The HSM05P15 is a P-channel MOSFET featuring 150V drain-source voltage and fast switching capabilities. It utilizes advanced trench MOSFET technology to achieve excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This device meets RoHS and ...
P Channel MOSFET HUASHUO IRLML6402 Featuring Low RDS ON and Super Low Gate Charge for Power Circuits
Product Overview The IRLML6402 is a P-channel, 20V fast switching MOSFET designed for high cell density trenched applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requiremen...
100V N Channel MOSFET HUASHUO HSU0026 Designed for Fast Switching and Synchronous Buck Applications
HSU0026 N-Ch 100V Fast Switching MOSFETs The HSU0026 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product ...
