Single FETs, MOSFETs
Dual N Channel MOSFET HUASHUO HSBA4204 with 40V Drain Source Voltage and RoHS Certified Green Product
Product Overview The HSBA4204 is a dual N-channel MOSFET featuring 40V breakdown voltage and fast switching capabilities. Designed with high cell density trench technology, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This product ...
DUAL N-Channel Fast Switching MOSFET HUASHUO HSSK2N7002 with Halogen Free Material and ESD Protection
Product Overview The HSSK2N7002 is a DUAL N-Channel Fast Switching MOSFET designed for a variety of applications including low-side load switching, level shift circuits, DC-DC converters, and portable devices such as DSCs, PDAs, and cell phones. These MOSFETs offer ESD protection and low RDS(on) ...
N Channel MOSFET HUASHUO HSBA6054 ideal for synchronous rectifier motor control and power conversion
Product Overview The HSBA6054 is a N-Channel MOSFET designed for fast switching applications. It features advanced trench MOS technology, low gate charge, and low RDS(ON), making it suitable for motor control, DC/DC converters, and synchronous rectifier applications. This device is 100% EAS ...
Low Gate Voltage N Channel MOSFET HXY MOSFET AO3422 HXY Suitable for Battery Protection Applications
Product OverviewThe AO3422 is an N-Channel Enhancement Mode MOSFET designed to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V. Its advanced trench technology makes it suitable for battery protection and other switching applications, offering high power ...
power switching N Channel MOSFET HUASHUO HSST3134 with low threshold voltage and RoHS certification
Product Overview The HSST3134 is a high cell density trenched N-channel MOSFET designed for fast switching and efficient performance in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full function ...
Trench technology based 80V P channel MOSFET HUASHUO HSH8129 designed for fast switching and power conversion
Product Overview The HSH8129 is a P-channel 80V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
Power Management N Channel Enhancement Mode MOSFET HUAYI HY1506D with Low RDS ON and RoHS Compliance
Product OverviewThe HY1506D/U/V is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a low RDS(ON) of 10.5 m (typ.) at VGS=10V, avalanche rating, and a reliable, rugged construction. Lead-free and green device options are ...
Power MOSFET HUAYI HYG210P06LQ1D P Channel Type with 40A Continuous Drain Current and Low Resistance
Product OverviewThe HYG210P06LQ1 is a P-Channel Enhancement Mode MOSFET designed for power management applications. It offers a -60V/-40A rating with low on-state resistance (RDS(ON) = 19m typ. @VGS = -10V). This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and ...
High cell density trenched N channel MOSFET HUASHUO HSS5N10 suitable for synchronous buck converters
Product Overview HSS5N10 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements with full function reliability approval. It offers a ...
40V P channel MOSFET HUASHUO HSBA4115 featuring super low gate charge and excellent CdVdt effect for power conversion
Product Overview The HSBA4115 is a P-channel 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
Single N Channel MOSFET HUAYI HYG015N04LS1C2 Suitable for DC DC Converters and Switching Applications
Product OverviewThe HYG015N04LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with a low RDS(ON) of 1.4m (typ.) at VGS = 10V and 2.0m (typ.) at VGS = 4.5V. This MOSFET is 100% avalanche tested...
Dual N channel MOSFET HSW6822 featuring fast switching and high cell density for load switch operation
Product Overview The HSW6822 is a dual N-channel fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. The HSW6822 meets RoHS and Green Product requirements ...
Low Gate Charge N Channel MOSFET HUASHUO IRLML0060 Featuring Trenched Cell Technology for Switching
Product Overview The IRLML0060 is a high cell density trenched N-channel MOSFET designed for fast switching and excellent efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approval. Key features include super ...
Power management optimized N Channel MOSFET HUASHUO HSBB0012 with low on resistance and fast switching
Product Overview The HSBB0012 is a new generation N-Channel MOSFET featuring low on-resistance and fast switching, making it ideal for high efficiency power management applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability ...
Power Management N Channel MOSFET HUASHUO HSBB3058 30V Fast Switching Device with Excellent CdVdt Performance
Product Overview The HSBB3058 is a N-Channel 30V Fast Switching MOSFET designed for power management applications. It features advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. This MOSFET is ideal for power management in desktop ...
80V P channel MOSFET HUASHUO HSU8119 fast switching with high cell density trench technology and RoHS compliance
Product Overview The HSU8119 is a P-channel, 80V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements, is 100% EAS ...
Power switching MOSFET HUAYI HY4008NA2P N Channel 80V 200A for motor and inverter applications
Product OverviewThe HY4008NA2P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications, power management in inverter systems, and motor control. It features a high current capability of 80V/200A, a low on-resistance of 3.5 m (typ.) at VGS = 10V, and is 100% ...
40V P channel MOSFET HUASHUO HSBB4115 featuring trench technology and low gate charge for power switching
Product Overview The HSBB4115 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% EAS ...
Single N Channel MOSFET HUAYI HYG025N04NA1C2 featuring low on resistance and halogen free compliance
Product OverviewThe HYG025N04NA1C2 is a single N-Channel Enhancement Mode MOSFET from Huayi Microelectronics. It features a high current capability of 40V/190A with a low on-resistance of 1.4m(typ.) @VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options ...
60V P channel MOSFET HUASHUO HSP6117 featuring low gate charge and trench technology for switching
Product Overview The HSP6117 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This RoHS and Green Product compliant MOSFET is 100% EAS ...
