Single FETs, MOSFETs
P Channel 100V Fast Switching MOSFET HUASHUO HSBB0115 with Low Gate Charge and Trench Technology
Product Overview The HSBB0115 is a P-Channel, 100V Fast Switching MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET is RoHS and Green Product compliant, with 100% EAS guaranteed and full ...
Low On Resistance Single N Channel MOSFET HUAYI HYG012N03LR1C2 for Battery Protection and Load Switch
Product OverviewThe HYG012N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for various applications. It features low on-resistance, high continuous drain current capability, and is 100% avalanche tested for reliability and ruggedness. Halogen-free options are available.Product ...
N Channel MOSFET HUASHUO HSL03N20 Trenched Technology Low Gate Charge Fast Switching Device
Product Overview The HSL03N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and ...
Fast switching N Channel and P Channel MOSFETs HUASHUO HSM4606B with excellent CdV dt effect decline
Product Overview The HSM4606B is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSM4606B meets RoHS and Green ...
SiC Power MOSFET HXY MOSFET HC2M0160120D Offering High Switching Frequency and Reduced Cooling Needs
Product OverviewThe HC2M0160120D is a SiC Power MOSFET, N-Channel Enhancement Mode, designed for high-performance applications. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and is easy to parallel and simple to drive. This MOSFET is resistant to ...
Low gate charge trench MOSFET HSW6604 suitable for small power switching and load switch applications
Product Overview The HSW6604 is a high-performance complementary N-channel and P-channel MOSFET featuring high cell density. It offers excellent RDSON and gate charge characteristics, making it suitable for most small power switching and load switch applications. The HSW6604 meets RoHS and Green ...
P Channel 40V MOSFET HUASHUO HSBA4113 Featuring Fast Switching and Low Gate Charge for Power Conversion
Product Overview The HSBA4113 is a P-channel, 40V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% ...
Low Gate Charge P Channel MOSFET HUASHUO HSBA1119 Designed for Synchronous Buck Converter Applications
Product Overview The HSBA1119 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient operation. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed ...
P channel MOSFET HUASHUO HSH4119 with high cell density trench technology and 100 percent EAS guaranteed
Product Overview The HSH4119 is a P-channel 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
High Current N Channel MOSFET HYG020N04NA1B Suitable for Li Battery Protection and Switching Circuits
Product OverviewThe HYG020N04NA1 is an N-Channel Enhancement Mode MOSFET designed for switching applications and Li-battery protection. It offers a high current capability with low on-resistance, featuring 100% avalanche testing for reliability and ruggedness. Lead-free and green devices are ...
100V N Channel MOSFET HUASHUO HSY0076A Featuring Trench Technology for Motor Drivers and UPS
Product Overview The HSY0076A is a N-Channel, 100V fast switching MOSFET designed for high-efficiency power applications. It features super low RDS(ON) and advanced high cell density Trench technology, ensuring superior performance. This MOSFET is 100% EAS guaranteed and available as a Green Device. ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG025N04NA1D for Load Switch and Battery Protection
HYG025N04NA1D Single N-Channel Enhancement Mode MOSFET The HYG025N04NA1D is a single N-Channel enhancement mode MOSFET designed for various applications. It features a low on-state resistance (RDS(ON) of 2.5m typ. @VGS = 10V), 100% avalanche tested for reliability, and a rugged construction. Halogen...
250V N channel MOSFET HUASHUO HSP044N25 featuring low gate charge and performance for power electronics applications
Product Overview The HSP044N25 is a high-performance N-channel 250V fast switching MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% ...
High cell density trenched MOSFET HUASHUO HSL6101 designed for synchronous buck converter power management
Product Overview The HSL6101 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter designs. It offers excellent RDS(ON) and gate charge characteristics. This device meets RoHS and Green Product requirements and is 100% ...
Power MOSFET HUASHUO HSBA6040 N Channel Trenched Device for Synchronous Buck Converter Applications
Product Overview The HSBA6040 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function ...
P channel MOSFET HUASHUO HSSC3139 featuring low gate charge and RoHS compliance for power management
Product Overview HSSC3139 is a P-channel MOSFET featuring high cell density trenched technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It supports high-side switching and meets RoHS and Green Product requirements with full function reliability ...
Fast Switching N Channel MOSFET HUASHUO HSU6008 Featuring High Cell Density Trench and Excellent RDS
Product Overview The HSU6008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements ...
Complementary MOSFET N Channel and P Channel HUAYI HYG170C03LR1S Suitable for Synchronous Rectifiers
Product OverviewThe HYG170C03LR1S is a complementary MOSFET featuring N-Channel and P-Channel devices. It offers high performance with low on-resistance and is 100% avalanche tested for reliability. This product is available in Halogen Free and Green (RoHS Compliant) versions and is suitable for ...
N Channel MOSFET HUASHUO HSBB3056 30V Fast Switching with Low Gate Charge and Enhanced CdV dt Effect
HSBB3056 N-Channel 30V Fast Switching MOSFETs Product Overview The HSBB3056 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for most synchronous buck converter applications. This ...
High Voltage MOSFET HUAYI HY3008P with Low On Resistance and 100 Amp Continuous Drain Current Rating
Product OverviewThe HY3008P/M/B/MF/PL/PM is an N-Channel Enhancement Mode MOSFET from HUAYI, designed for switching applications and power management in inverter systems. It features a high voltage rating of 80V and a continuous drain current of 100A, with a low on-state resistance of 6.6m (typ.) at ...
