Single FETs, MOSFETs
High reliability trench P channel MOSFET HUASHUO HSBA90P02 optimized for power management solutions
Product Overview The HSBA90P02 is a P-channel MOSFET featuring high cell density trench technology, designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function ...
Power switching N Channel MOSFET HUAYI HYG050N13NS1P with 135V voltage rating and 200A drain current
Product OverviewThe HYG050N13NS1P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 135V and a continuous drain current of 200A, with a low on-resistance of 4.0m (typ.) at VGS = 10V. This MOSFET is 100% avalanche tested, ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG040N04LS1C1 with PDFN8L Package and RoHS Compliance
HYG040N04LS1C1 Single N-Channel Enhancement Mode MOSFETThe HYG040N04LS1C1 is a single N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers high performance with a low on-resistance of 4.1m (typ.) at VGS = 10V and 6.7m (typ.) at VGS = 4.5V. This device ...
High Cell Density N Channel MOSFET HUASHUO HSU16N25 with 250V Drain Source Voltage and Excellent RDS
HSU16N25 N-Ch 250V Fast Switching MOSFETs The HSU16N25 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, ...
2N7002 HXY MOSFET N Channel Device with Excellent RDS ON and Gate Voltage Operation Starting at 4.5V
Product OverviewThe 2N7002-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product ...
SiC Power MOSFET N Channel Enhancement Mode Device HXY MOSFET STW70N65DM6 HXY for Power Applications
Product Overview The HUAXUANYANG STW70N65DM6 is a 3rd generation SiC Power MOSFET, N-Channel Enhancement Mode, designed for high-efficiency power applications. It features optimized packaging with a separate driver source pin, high blocking voltage with low on-resistance, and high-speed switching ...
N channel MOSFET HUASHUO HSH30N15A featuring trench technology and low gate charge for power supply designs
Product Overview The HSH30N15A is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. These MOSFETs meet RoHS and Green Product requirements, are 100% EAS guaranteed, and have full function ...
Trench Technology P channel MOSFET HUASHUO IRLML5203 with Superior CdV dt Effect and Fast Switching
Product Overview The IRLML5203 is a P-channel Fast Switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
N Channel MOSFET HUASHUO HSBB0096 Featuring 100V Drain Source Voltage and Fast Switching Performance
Product Overview The HSBB0096 is a N-Channel 100V Fast Switching MOSFET designed using SGT technology. It offers excellent Rds(on), low gate charge, and fast switching characteristics, making it suitable for a wide variety of applications. Key features include 100% EAS Guaranteed, low RDS(ON), low ...
High cell density trenched p channel mosfet HUASHUO HSBB3103 for synchronous buck converter performance
Product Overview The HSBB3103 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device meets RoHS and Green Product requirements, and is ...
switching MOSFET HUASHUO HSS2319 P channel device offering excellent RDSON and green product status
Product Overview The HSS2319 is a P-channel, 40V fast-switching MOSFET utilizing high cell density trenched technology. It offers excellent RDS(ON) and efficiency, making it ideal for most low-power switching and load switch applications. This product meets RoHS and Green Product requirements and is ...
Power Switching N Channel Enhancement Mode MOSFET HYG200N12NS1P with Low RDS ON and High Reliability
Product OverviewThe HYG200N12NS1P is an N-Channel Enhancement Mode MOSFET designed for power switching applications and high-frequency synchronous buck converters. It features a low RDS(ON) of 15m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged construction. Lead-free and green ...
Single N Channel Enhancement Mode MOSFET HYG045N04LA1D with 40 Volt 77 Amp Load Switch Application
Product OverviewThe HYG045N04LA1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers a low RDS(ON) of 4.5 m (typ.) at VGS = 10V and 5.2 m (typ.) at VGS = 4.5V. This device is 100% avalanche tested, ...
Fast Switching MOSFET HUASHUO HSM4P10D Dual P Channel with Low Gate Charge and Electrical Properties
Product Overview The HSM4P10D is a DUAL P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS ...
N Channel MOSFET HUASHUO HSP0016 with High Cell Density Trench Technology and Full Functional Approval
Product Overview The HSP0016 is a fast-switching N-channel MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, with 100% EAS ...
100 Volt 380 Amp N Channel MOSFET HUAYI HYG015N10NS1TA Low RDS ON 1.2 Milliohm Halogen Free Power Device
Product OverviewThe HYG015N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a 100V/380A rating and a low RDS(ON) of 1.2 m(typ.)@VGS = 10V. This device is 100% Avalanche Tested, reliable, and ...
Trench technology MOSFET HUASHUO HSK02N20 designed for fast switching and loss in power applications
Product Overview The HSK02N20 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements ...
Trenched N channel MOSFET HUASHUO HSS3400 with super low gate charge and high cell density technology
Product Overview The HSS3400 is a high cell density trenched N-channel MOSFET designed for fast switching and efficient operation in small power switching and load switch applications. It offers excellent RDS(ON) and efficiency, meeting RoHS and Green Product requirements with full function ...
Fast Switching MOSFET P Channel 100V HUASHUO HSY0149A for DC DC Converter and Synchronous Rectification
Product Overview The HSY0149A is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is ideal for DC/DC converters and power tool applications, offering a 100% EAS guaranteed rating, fast switching speed, and advanced high cell ...
Trench technology P channel MOSFET HUASHUO BSS84A with 50V rating and excellent switching performance
Product Overview The BSS84A is a P-channel, 50V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it ideal for small power switching and load switch applications. This device meets RoHS and Green Product requirements, with full ...
