Single FETs, MOSFETs
Load Switching Device HUAYI HYG800P10LR1S P Channel MOSFET with RoHS Compliant Halogen Free Design
Product OverviewThe HYG800P10LR1S is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for power management and load switching applications. It features a -100V/-8A rating, low on-resistance (RDS(ON) of 72 m typ. @ VGS = -10V), 100% avalanche tested, and is available in halogen-free (RoHS ...
Low Gate Charge N Channel and P Channel Fast Switching MOSFETs HUASHUO HSU0903 for Power Applications
Product Overview The HSU0903 series offers N-Channel and P-Channel Fast Switching MOSFETs designed for efficient power management and DC motor control applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and are available as Green Devices. They utilize advanced high cell ...
Fast Switching N channel MOSFET HSH18N20 Featuring Low RDS ON and High Cell Density Trench Technology
Product Overview The HSH18N20 is a high-performance N-channel MOSFET featuring an advanced high cell density Trench technology. Designed for fast switching applications, it offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets ...
High Frequency Switching MOSFET HUASHUO HSP100N15 with 150V Drain Source Voltage and Low On Resistance
Product Overview The HSP100N15 is an N-Channel Fast Switching MOSFET designed for high-frequency applications. It features a 150V drain-source voltage rating and a low on-resistance (RDS(ON)) of 7.3 m typ. This MOSFET utilizes advanced high cell density Trench technology, offering super low RDS(ON) ...
Low On Resistance N Channel MOSFET HUAYI HY4504B6 with 40V Voltage Rating and High Current Capacity
Product OverviewThe HY4504B6 is an N-Channel Enhancement Mode MOSFET designed for various switching applications. It features a 40V/322A rating with a low on-resistance of 1.5m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen Free and Green (RoHS ...
High Current N Channel Enhancement Mode MOSFET with 100 Volt 160 Amp HUAYI HYG045N10NS1P and Low On Resistance
HYG045N10NS1/B N-Channel Enhancement Mode MOSFETThe HYG045N10NS1/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key features such as 100V/160A rating, low on-state resistance (RDS(ON)=3.8m typ. @ VGS ...
HXY MOSFET SI2333 HXY P Channel Enhancement Mode MOSFET designed for PWM and load switch applications
SI2333-HXY P-Channel Enhancement Mode MOSFETThe SI2333-HXY utilizes advanced trench technology to deliver excellent RDS(ON) performance, making it suitable for load switch and PWM applications. Its key features include VDS = -20V, ID = -6.5A, and RDS(ON) < 28m @ VGS=-4.5V. It is ideal for battery ...
Switching MOSFET HYG020N04NA1P Featuring 220A Continuous Drain Current and Low RDS ON for Performance
Product OverviewThe HYG020N04NA1 is an N-Channel Enhancement Mode MOSFET designed for switching applications. It offers high performance with a low on-state resistance (RDS(ON) of 1.8 m typ. @VGS = 10V) and a high continuous drain current of 220A. This device is 100% avalanche tested, reliable, and ...
P channel mosfet huashuo hss3415e with 20v drain source breakdown voltage and enhanced esd protection
Product Overview The HSS3415E is a P-channel, 20V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone ...
N Channel Enhancement MOSFET HUAYI HYG400N15NS1D Designed for LED Drive and Power Management Applications
Product OverviewThe HYG400N15NS1D is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 150V and a continuous drain current of 30A, with a low on-state resistance of 34m (typ.) at VGS = 10V. This device is 100% avalanche tested, ...
Switch Application N Channel MOSFET HUAYI HY045N10B with 4.2 Milliohm Resistance and 120 Amp Current
Product OverviewThe HY045N10P/B is an N-Channel Enhancement Mode MOSFET designed for switch applications and DC/DC converters. It features a 100V/120A rating with a low on-state resistance of 4.2m(typ.)@VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green ...
SiC Power MOSFET HXY MOSFET HC1M40120J Featuring Separate Driver Source Pin and High Voltage Rating
Product OverviewThe HC1M40120J is a SiC Power MOSFET from HUAXUANYANG HXY ELECTRONICS CO.,LTD. This N-Channel Enhancement Mode device leverages 3rd generation SiC MOSFET technology for high performance in demanding applications. It offers reduced switching losses, higher system efficiency, and ...
p channel mosfet 60 volt HUASHUO HSP6113 featuring low gate charge and high cell density trench technology
Product Overview The HSP6113 is a P-channel, 60V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
High cell density trenched MOSFET HUASHUO HSBA50N06 suitable for synchronous buck converter circuits
Product Overview The HSBA50N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements and is 100% EAS ...
N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design
Product OverviewThe HYG080N10LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-frequency point-of-load synchronous buck converters and power tool applications. It offers a 100V/65A rating with low on-state resistance (RDS(ON) = 6.9 m typ. @ VGS = 10V). The device is 100% ...
Power Management MOSFETs HSBA0903 Featuring N Channel and P Channel Fast Switching Capabilities
Product Overview The HSBA0903 series comprises N-Channel and P-Channel Fast Switching MOSFETs designed for efficient power management and DC motor control applications. These devices feature super low gate charge, 100% EAS guarantee, and excellent CdV/dt effect decline, leveraging advanced high cell ...
High Current N Channel MOSFET HUAYI HY4008W with TO 247 3L Package and Lead Free Green Device Options
Product OverviewThe HOOYI HY4008W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low on-state resistance (RDS(ON)) of 2.9 m (typ.) at VGS=10V and a high continuous drain current capability. ...
Trenched N channel MOSFET HUASHUO HSS2312 optimized for power switching and load switch applications
Product Overview The HSS2312 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements with full function reliability approved. Key features include super low gate ...
High Current N Channel Enhancement Mode MOSFET HUAYI HY4504W with Low On Resistance and RoHS Compliance
Product Overview The HY4504W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems. It offers high performance with a 40V/250A rating, low on-resistance of 2.0 m (typ.) at VGS=10V, and is avalanche rated for reliability and ruggedness. Halogen-free and green ...
Power Management N Channel Enhancement Mode MOSFET HUAYI HY3704P Suitable for Switching Applications
Product OverviewThe HY3704P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. The device is 100% avalanche tested and ...
