Single FETs, MOSFETs
Low On Resistance MOSFET HUAYI HYG006N04LS1TA for Inverter Systems and Power Management Applications
HYG006N04LS1TA N-Channel Enhancement Mode MOSFET The HYG006N04LS1TA is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a low on-resistance of 0.45 m (typ.) at VGS = 10V and 0.61 m (typ.) at VGS = 4.5V, along ...
Fast switching P channel MOSFET HUASHUO HSS2307 20V with excellent RDSON and gate charge performance
Product Overview The HSS2307 is a P-channel, 20V fast switching MOSFET designed with high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is ...
N Channel MOSFET HYG053N10NS1D Featuring 5.2 Milliohm RDS ON and 100 Volt Breakdown Voltage for Drive
Product OverviewThe HYG053N10NS1D/U/V is an N-Channel Enhancement Mode MOSFET designed for switching applications, motor control and drive, and battery management. It offers high performance with a 100V/95A rating and a low RDS(ON) of 5.2m (typ.) at VGS = 10V. This device is 100% avalanche tested, ...
Single N Channel Enhancement Mode MOSFET HYG025N04NR1C2 with 170 Amp Current and Halogen Free Options
Product OverviewThe HYG025N04NR1C2 is a single N-Channel enhancement mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON) = 1.7 m typ. @VGS = 10V), 100% avalanche tested, and a reliable, rugged design. Halogen-free options are available. This MOSFET is ...
power management dual N channel MOSFET HUASHUO HSSK6303 featuring fast switching and low gate charge
Product Overview The HSSK6303 is a dual N-channel 20V fast switching MOSFET designed to offer an optimal balance of rapid switching speeds, low on-resistance, and cost-effectiveness. It meets RoHS and Green Product requirements with full functional reliability. Key advantages include super low gate ...
30V Fast Switching P Channel MOSFET HUASHUO HSH3119 with Superior RDS ON and Gate Charge Performance
HSH3119 P-Channel 30V Fast Switching MOSFET Product Overview The HSH3119 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge performance in synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS ...
Single N Channel Enhancement Mode MOSFET HUAYI HYG030N03LQ1C2 with Halogen Free and RoHS Compliance
Product OverviewThe HYG030N03LQ1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-resistance (RDS(ON)) of 2.4m typ. at VGS = 10V and 3.5m typ. at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free and RoHS ...
HYG060P04LQ1D P Channel Enhancement Mode MOSFET for DC DC Converter Switching and Battery Protection
Product OverviewThe HYG060P04LQ1D/U/V is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters, including battery protection. It offers high performance with a low RDS(ON) of 5.8 m (typ.) at VGS = -10V and 8.5 m (typ.) at VGS = -4.5V. This ...
Fast switching trench technology P channel MOSFET HUASHUO HSBB60P02 20V device for power conversion
Product Overview The HSBB60P02 is a P-channel, 20V fast switching MOSFET from HS Semiconductor, featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product ...
High current MOSFET HUAYI HYG016N10NS1TA N Channel 100V 370A for inverter and power switching needs
Product OverviewThe HYG016N10NS1TA is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high current handling capabilities (100V/370A) and low on-resistance (RDS(ON)=1.35m typ. @VGS = 10V). The device is 100% avalanche ...
HSK0008 N Channel MOSFET Featuring Fast Switching Capability and High Cell Density Trench Structure
Product Overview The HSK0008 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements ...
Power Management MOSFET HUAYI HY3906P Featuring 60V Drain Source Voltage and 4 Milliohm On Resistance Typical
Product OverviewThe HY3906P/B is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a 60V/190A rating with a low on-resistance of 4.0m (typ.) at VGS=10V. This device is reliable, rugged, and available in lead-free and green (RoHS compliant) versions. It is ...
N channel mosfet HUASHUO HSW2N15 with high cell density trench design providing switching and loss
Product Overview The HSW2N15 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and offers features such as super low gate charge ...
High Cell Density Complementary MOSFET HUASHUO HSBA6901 Series with Low RDS ON and Power Conversion
Product Overview The HSBA6901 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for most synchronous buck converter applications. The HSBA6901 series meets ...
Lithium Ion Battery Pack Dual N Channel Fast Switching MOSFET HUASHUO HSCC8233 with Low On Resistance
Product Overview The HSCC8233 is a dual N-channel fast switching MOSFET featuring low drain-source ON resistance and robust ESD protection. Designed for Lithium-ion battery pack applications, this trenched MOSFET meets RoHS and Green Product requirements, offering full function reliability. It is ...
Load Switching P Channel MOSFET HYG161P10LA1S with 135 Milliohm On Resistance and Avalanche Tested
Product OverviewThe HYG161P10LA1S is a P-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for power management and load switching applications. It features a -100V/-6A rating, low on-resistance of 135 m (typ.) at VGS = -10V, and 100% avalanche tested for reliability. Halogen...
High cell density trenched MOSFET HUASHUO HSM4410 designed for synchronous buck converter performance
Product Overview The HSM4410 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
Single N Channel MOSFET HUAYI HYG038N03LR1D Featuring Low RDS ON and Avalanche Tested for Battery Protection
Product OverviewThe HYG038N03LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It offers high performance with a low RDS(ON) of 3.5 m (typ.) at VGS = 10V and 4.9 m (typ.) at VGS = 4.5V. This device is ...
Halogen Free MOSFET HUAYI HYG025N06LS1C2 with Low RDS ON and High Junction Temperature Capability
Product OverviewThe HYG025N06LS1C2 is a single N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features low on-state resistance (RDS(ON)) of 2.1 m (typ.) at VGS = 10V and 3.2 m (typ.) at VGS = 4.5V, 100% avalanche tested, and a reliable, rugged design. Halogen-free ...
Power Management MOSFET HUAYI HY3203C2 with 30V Drain Source Voltage and Avalanche Tested Reliability
Product OverviewThe HY3203C2 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management for DC/DC converters. It offers a low on-resistance of 1.9m (typ.) at VGS = 10V and 2.5m (typ.) at VGS = 4.5V, with a drain-source voltage of 30V and a continuous drain ...
