Single FETs, MOSFETs
Power Management N Channel MOSFET HUASHUO HSBB3054 Featuring 30V Drain Source Voltage and Fast Switching Performance
Product Overview The HSBB3054 is an N-Channel 30V Fast Switching MOSFET designed for power management applications. It features advanced high cell density Trench technology, offering advantages such as 100% EAS Guaranteed, super low gate charge, and excellent CdV/dt effect decline. This MOSFET is ...
Power Switching N Channel Enhancement Mode MOSFET HUAYI HY1515P with 150V 50A Rating and Low On Resistance
Product OverviewThe HY1515P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a 150V/50A rating and a low on-resistance of 28m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green ...
Power Switching MOSFET HYG032N08NS1W Featuring 80V Drain Source Voltage and 185A Continuous Current
Product OverviewThe HYG032N08NS1W is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers high performance with a low RDS(ON) of 2.8m (typ.) at VGS = 10V and a continuous drain current of 185A. This device is 100% avalanche tested, reliable, and rugged, with ...
Complementary MOSFET series HUASHUO HSBA3903 designed for performance in power management applications
Product Overview The HSBA3903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA3903 series meets RoHS ...
3rd Generation SiC MOSFET HXY MOSFET NTHL045N065SC1-HXY with High System Efficiency and Fast Switching
Product OverviewThe HUAXUANYANG NTHL045N065SC1 is a SiC Power MOSFET, N-Channel Enhancement Mode device featuring 3rd generation SiC MOSFET technology. It offers high blocking voltage with low on-resistance, high-speed switching with low capacitances, and a fast intrinsic diode with low reverse ...
N Channel Power MOSFET Huixin H14N10FBL for Power Switching Hard Switched Circuits and UPS Applications
Product OverviewThe H14N10FBL is an N-Channel Power MOSFET designed for high power and current handling capabilities. It is suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. This lead-free product is compliant with EU RoHS 2.0 ...
Power Switching N Channel Enhancement Mode MOSFET HUAYI HY029N10P with 100V 270A Rating and Low On Resistance
Product OverviewThe HY029N10P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, including Uninterruptible Power Supplies. It offers high performance with a 100V/270A rating, low on-resistance of 2.6m (typ.) at VGS = 10V, and is 100% avalanche tested for reliability ...
High cell density N channel MOSFET HSK10N06 suitable for demanding industrial switching applications
Product Overview The HSK10N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS ...
60V P channel MOSFET HUASHUO HSM6113 fast switching device with trench technology and low gate charge
Product Overview The HSM6113 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS ...
High Continuous Drain Current N Channel MOSFET HYG016N04LS1B Ideal for Battery and Inverter Systems
Product OverviewThe HYG016N04LS1P/B is an N-Channel Enhancement Mode MOSFET designed for power management applications. It features low on-resistance, high continuous drain current capability, and is 100% avalanche tested for reliability. Available in lead-free and green (RoHS compliant) versions, ...
60V P channel MOSFET HUASHUO HSP6115 featuring trench technology low gate charge and high cell density for power switching
Product Overview The HSP6115 is a P-channel, 60V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. The device is RoHS and Green Product compliant, with 100% EAS ...
N Channel MOSFET HUAYI HYG090N06LS1P designed for point of load synchronous buck converter applications
Product OverviewThe HYG090N06LS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for demanding applications. It offers excellent RDS(ON) characteristics, 100% avalanche testing, and a reliable, rugged design. Available in RoHS compliant and halogen-free options, it is suitable ...
HYG013N03LS1C2 N Channel Enhancement Mode MOSFET for Switching and Power Management in DC DC Systems
HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFETThe HYG013N03LS1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-resistance (RDS(ON)) at various gate-source voltages, 100% ...
Power Switching MOSFET HUAYI HYG065N15NS1B N Channel Device with 6.2 Milliohm On Resistance Typical
N-Channel Enhancement Mode MOSFET The HYG065N15NS1P/B is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It offers a robust and reliable solution with key features including 150V/165A rating, low on-resistance of 6.2m (typ.) at VGS = 10V, and 100% ...
Low rds on n channel enhancement mode mosfet suitable for rugged power switching HUAYI HY1515D device
N-Channel Enhancement Mode MOSFET The HY1515D is a reliable and rugged N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low RDS(ON) of 29 m (typ.) at VGS = 10V and is 100% avalanche tested. This device is available in Halogen-Free and Green (RoHS Compliant) ...
High Cell Density Trench N Channel MOSFET HUASHUO HSU50N06 Suitable for Fast Switching Applications
Product Overview The HSU50N06 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% ...
Power MOSFET HUAYI HY1001P with 70 Volt Drain Source Voltage and 80 Ampere Continuous Current Rating
Product OverviewThe HY1001P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a 70V/80A rating, low RDS(ON) of 7.2m(typ.)@VGS = 10V, and is 100% avalanche tested for reliability and ...
N Channel Enhancement Mode MOSFET HUAYI HY5608W with Low RDS ON and RoHS Compliant Lead Free Versions
HY5608W/A N-Channel Enhancement Mode MOSFETThe HY5608W/A is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a voltage rating of 80V and a continuous drain current of 360A (TC=25C). Key advantages ...
P Channel MOSFET HUAYI HYG190P13NA1B Featuring 125 Volt Drain Source Voltage and 72 Amp Continuous Current
Product OverviewThe HYG190P13NA1/B is a P-Channel Enhancement Mode MOSFET designed for portable equipment and battery-powered systems. It features a high drain-source voltage of -125V and a continuous drain current of -72A, with a low on-state resistance of 18 m (typ.) at VGS = -10V. This device is ...
Fast Switching Dual N Channel MOSFET HUASHUO HSW6800 Designed for Small Power Load Switch Applications
Product Overview The HSW6800 is a dual N-channel fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it ideal for various small power switching and load switch applications. This product meets RoHS and Green Product requirements and ...
