Single FETs, MOSFETs
Power Management N Channel Enhancement Mode MOSFET HUAYI HY3810P 100V 180A Low RDS ON 5 Milliohm
Product OverviewThe HY3810 is an N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a 100V/180A rating and a low RDS(ON) of 5.0 m (typ.) at VGS=10V. This MOSFET is reliable, rugged, and available in lead...
N Channel Enhancement Mode MOSFET HUAYI HYG012N03LR1TA with Low On Resistance and High Drain Current
Product OverviewThe HYG012N03LR1TA is a high-performance N-Channel Enhancement Mode MOSFET designed for switching applications. It features a low on-resistance of 0.7 m (typ.) at VGS = 10V and 1.0 m (typ.) at VGS = 4.5V, a high continuous drain current of 380A, and is 100% avalanche tested for ...
Semiconductor components HUAYI HY8290P certified under IPC JEDEC J STD 020 for high temperature electronic applications
Product OverviewThis product line offers a range of semiconductor components designed for various electronic applications. They are compliant with RoHS and Halogen-free standards, meeting stringent environmental requirements. The products are suitable for high-temperature applications, including ...
Fast Switching N Channel MOSFET HSK3400 with Excellent RDS ON and High Cell Density Trench Technology
Product Overview The HSK3400 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This device meets RoHS and Green Product requirements, ...
High Cell Density Trenched N Channel MOSFET HUASHUO HSH3024 for Synchronous Buck Converter Performance
Product Overview The HSH3024 is a high cell density trenched N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full ...
power MOSFET HUASHUO HSK6008 with low static drain source resistance and fast switching capability
Product Overview The HSK6008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This fast-switching MOSFET meets RoHS and Green Product requirements and offers features such as super low gate charge ...
Power switching Huixin H12N90 N Channel MOSFET featuring low gate charge and robust avalanche testing
Product OverviewThe H12N90 is a high-performance N-Channel MOSFET designed for power switching applications. It features low gate charge, low Crss, and is 100% avalanche tested, making it suitable for demanding applications. This RoHS compliant device offers robust performance and reliability...
40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON for buck converters
Product Overview The HSCE4117 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
Power switching N-channel MOSFET HUASHUO HSX120N20 featuring low RDS ON and high current capability
Product Overview The HSX120N20 is a high-performance N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function ...
P Channel MOSFET HUASHUO HSH0129 100V Fast Switching Device for Power Tool and Switching Applications
Product Overview The HSH0129 is a P-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It is suitable for DC/DC converters, power tool applications, and offers fast switching speed with advanced high cell density Trench technology. ...
High Current Single N Channel MOSFET HUAYI HYG013N04NR1B6 with RoHS and Halogen Free Certification
Product OverviewThe HYG013N04NR1B6 is a single N-Channel Enhancement Mode MOSFET from Hymexa, designed for demanding applications. It features a high continuous drain current of 377A and a low on-resistance of 1.1 m (typ.) at VGS = 10V, making it ideal for load switching and lithium battery ...
Power Management MOSFET HUAYI HY3606B Featuring Low On State Resistance and 60V Drain Source Voltage
Product OverviewThe HOOYI HY3606P/B is an N-Channel Enhancement Mode MOSFET designed for power management and switching applications. It offers high reliability, ruggedness, and is available in lead-free and green (RoHS compliant) options. Key features include a 60V breakdown voltage, 162A ...
N Channel MOSFET HUASHUO HSBA6066 Featuring Low Gate Charge and Green Device Option for Power Circuits
Product Overview The HSBA6066 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring advanced Trench MOS Technology, it offers low gate charge and low RDS(ON), making it ideal for demanding power management tasks. This device is 100% EAS guaranteed and available ...
Fast Switching N Channel MOSFET HUASHUO HSU6004 with Excellent RDS ON and Gate Charge Characteristics
Product Overview The HSU6004 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics. This component meets RoHS and Green Product requirements and is 100% EAS ...
100 Volt 322 Ampere N Channel MOSFET HUAYI HYG018N10NS1B6 Featuring Low RDS ON and Avalanche Tested
Product OverviewThe HYG018N10NS1B6 is an N-Channel Enhancement Mode MOSFET designed for high-performance applications. It features a 100V/322A rating with a low RDS(ON) of 1.4m(typ.)@VGS=10V. This device is 100% avalanche tested, reliable, rugged, and available in Halogen-Free and Green (RoHS ...
Power management N Channel MOSFET HUASHUO HSBA90N02 featuring super low gate charge and performance
Product Overview The HSBA90N02 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% ...
Low Gate Charge N Channel MOSFET HUASHUO HSM0056 Suitable for High Speed Circuits and Portable Devices
Product Overview The HSM0056 is a high-performance N-Channel MOSFET designed for fast switching applications. It features 100V drain-source voltage and low on-resistance, making it suitable for portable equipment, battery-powered systems, and hard switching or high-speed circuits. Key advantages ...
P Channel MOSFET HUAYI HYG110P04LQ2D Featuring Low RDS ON and High Drain Current for DC DC Converters
Product OverviewThe HYG110P04LQ2 is a P-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers reliable and rugged performance with a -40V drain-source voltage and -50A continuous drain current. Key advantages include low on-state ...
Fast Switching MOSFET HUASHUO IRLML2502 with Low Gate Charge and Excellent CdVdt Characteristics
Product Overview The IRLML2502 is a high cell density trenched N-channel MOSFET designed for fast switching and excellent RDS(ON) in low-power switching and load switch applications. It meets RoHS and Green Product requirements, offering super low gate charge and excellent Cdv/dt effect decline due ...
Low On Resistance 1.8mOhm MOSFET N Channel 100V 280A HUAYI HYG018N10NS1P Halogen Free Device
Product OverviewThe HYG018N10NS1/B is a N-Channel Enhancement Mode MOSFET designed for high-power applications. It features a low on-resistance of 1.8m(typ.)@VGS=10V, 100V/280A rating, and is 100% avalanche tested for reliability. Available in Halogen-Free and Green (RoHS Compliant) versions, this ...
