Single FETs, MOSFETs
Low gate charge P channel MOSFET HUASHUO HSS2P20 200V trench technology designed for switching circuits
Product Overview The HSS2P20 is a P-channel, 200V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements ...
Power Switching N Channel MOSFET HUAYI HYG042N10NS1B Featuring Low On Resistance and High Reliability
Product OverviewThe HYG042N10NS1/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications, including DC-DC converters. It offers high performance with a 100V/160A rating, low on-resistance (RDS(ON)=3.5m typ. @ VGS = 10V), and is 100% avalanche tested for reliability and ...
ESD protected dual N channel MOSFET HUASHUO HSCC8211 suitable for lithium ion battery pack circuits
Product Overview The HSCC8211 is a dual N-channel fast switching MOSFET designed with low RDSON trenched technology and robust ESD protection. This device is particularly suitable for Lithium-ion battery pack applications. It meets RoHS and Green Product requirements, offering full functional ...
Power Switching MOSFET HXY MOSFET AO4882 HXY Featuring Dual N Channel and Low Gate Voltage Operation
Product OverviewThe AO4882-HXY is a Dual N-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS CO.,LTD. It offers excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, making it suitable for battery protection and other switching applications. This device ...
High Current MOSFET HUASHUO HSBA8066 with 80V Drain Source Voltage and Excellent Switching Performance
Product Overview The HSBA8066 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring an 80V drain-source voltage rating, it is ideal for high-frequency switching, synchronous rectification, DC/DC converters, and motor driver applications. This MOSFET utilizes ...
HYG200P10LR1P P Channel MOSFET with Lead Free Green Options and High Drain Source Voltage Capability
Product OverviewThe HYG200P10LR1P/B is a P-Channel Enhancement Mode MOSFET from Huayi Microelectronics, designed for high-performance applications. It features a -100V drain-source voltage and -80A continuous drain current, with low on-state resistance of 20 m (typ.) at VGS = -10V. This device is ...
Switching MOSFET HUAYI HYG065N07NS1MF Designed for Inverter Systems and Motor Control Applications
Product OverviewThe HYG065N07NS1MF is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers high performance with a low RDS(ON) of 5.5 m (typ.) at VGS = 10V, 70V/100A rating, and 100% avalanche tested for ...
Power Management Applications Using HUASHUO HSM0903 N Channel and P Channel Fast Switching MOSFET
Product Overview The HSM0903 is a series of N-Channel and P-Channel Fast Switching MOSFETs designed for high-efficiency power management applications. These MOSFETs feature super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline, leveraging advanced high cell density Trench ...
Trench Technology N Channel MOSFET HUASHUO HSU28N15 With Super Low Gate Charge And High Cell Density
Product Overview The HSU28N15 is a high-performance trench N-channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge characteristics. It is designed for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is ...
40V P channel MOSFET HUASHUO HSM4103 with advanced trench technology and super low gate charge design
Product Overview The HSM4103 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS ...
100V 230A N Channel Enhancement Mode MOSFET HUAYI HYG028N10NS1B6 for Power Switching Applications
HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET The HYG028N10NS1B6 is a 100V/230A N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 2.4m (typ.) at VGS = 10V, 100% avalanche tested for reliability, and a rugged construction. This device ...
Switching and Power Management MOSFET HYG064N08NA1B N Channel Enhancement Mode with 6.4 Milliohm RDS
Product OverviewThe HYG064N08NA1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It features high performance with a low RDS(ON) of 6.4m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Lead-free and ...
High cell density N channel MOSFET HUASHUO HSL6008 ideal for power switching and load switch circuits
Product Overview The HSL6008 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It meets RoHS and Green Product requirements and offers features like super low gate charge and excellent CdV/dt effect ...
High cell density P channel MOSFET HUASHUO HSU60P02 designed for fast switching and power conversion
Product Overview The HSU60P02 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements with full ...
N Channel Fast Switching MOSFET HUASHUO HSU0056 Suitable for 100V Portable Equipment Battery Systems
Product Overview The HSU0056 is a N-Channel Fast Switching MOSFET designed for 100V applications. It is suitable for portable equipment, battery-powered systems, and hard switching and high-speed circuit applications. Its fast switching characteristics make it ideal for demanding circuit designs. ...
Low Resistance Single N Channel MOSFET HYG037N04LR1D Suitable for Load Switch and Battery Protection
Product OverviewThe HYG037N04LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It features low on-state resistance (RDS(ON)= 3.8 m typ. @VGS = 10V), 100% avalanche tested, and is reliable and rugged. ...
HSK3113 P channel MOSFET featuring 30V drain source voltage and fast switching for power management
Product Overview The HSK3113 is a P-channel, 30V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS ...
Fast Switching N Channel MOSFET HSBA6032 Featuring High Cell Density Trench Technology and Operation
Product Overview The HSBA6032 is a high cell density trenched N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has ...
dual N channel 30V MOSFET HUASHUO HSM3214 designed for synchronous buck converter and power circuits
Product Overview The HSM3214 is a dual N-channel 30V fast switching MOSFET designed for high cell density trenched technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% ...
60V Fast Switching N Channel MOSFET Power Transistor HUASHUO HSBA6048 for Synchronous Buck Converter
HSBA6048 N-Ch 60V Fast Switching MOSFETs Product Overview The HSBA6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green ...
