Single FETs, MOSFETs
HXY MOSFET NVTFS5116PL HXY P Channel MOSFET Featuring Advanced Trench Technology and Low Gate Charge
Product OverviewThe NVTFS5116PL-HXY is a P-Channel Enhancement Mode MOSFET from HUAXUANYANG ELECTRONICS, utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.Product AttributesBrand: HUAXUANYANG ELECTRONICS CO.,LTDProduct ID: NVTFS5116PL-HXYPackage: DFN3X3-8LWebsite: www.hxymos.comOrigin: Shenzhen HuaXuanYang
N Channel 40V Fast Switching MOSFET HUASHUO HSBA4086 with Low Gate Charge and High Current Capability
Product Overview The HSBA4086 is a high-performance N-Channel 40V Fast Switching MOSFET designed for demanding applications. Featuring advanced trench technology, it offers low gate charge, high current capability, and fast switching characteristics. This MOSFET is ideal for use in Switch Mode Power Supplies (SMPS) for synchronous rectification, DC/DC converters, and Or-ing applications. It is RoHS and Halogen-Free compliant. Product Attributes Brand: HS-Semi Type: N-Channel
High cell density trenched P channel MOSFET HUASHUO HSS2333 optimized for synchronous buck converter
Product Overview The HSS2333 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for most synchronous buck converter applications. This device meets RoHS and Green Product requirements and has approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
N Channel MOSFET Trench Technology Device HUASHUO HSH8004 Ideal for Fast Switching Applications
Product Overview The HSH8004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent CdV/dt effect decline, achieved through advanced high cell density
Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full reliability approval
Product Overview The HSBB3909 is a series of high-performance complementary N-channel and P-channel Fast Switching MOSFETs featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. They are designed with advanced high cell density Trench technology and meet RoHS and Green Product requirements. The series is 100% EAS guaranteed with full function reliability approval.
Low On Resistance N Channel Enhancement Mode MOSFET HUAYI HYG060N08NS1B with 80 Volt 105 Amp Rating
HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET The HYG060N08NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications, power management in inverter systems, and motor control. It offers a high performance with low on-resistance (RDS(ON)=5.5 m typ. @ VGS = 10V), 80V/105A rating, and is 100% avalanche tested for reliability and ruggedness. Lead-Free and Green devices are available, compliant with RoHS standards. Product Attributes Brand: HYG (Huayi
N channel MOSFET HUASHUO HSBA6016 featuring 100 percent EAS guaranteed reliability and trench design
Product Overview The HSBA6016 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, providing super low gate charge and excellent CdV/dt effect decline through advanced high cell density Trench technology. Product Attributes Brand: HS-Semi Product Type: N-channel
Fast Switching N Channel MOSFET HUASHUO HSH250N10 100V Low RDS ON Ideal for Battery Management Systems
Product Overview HSH250N10 is a N-Channel 100V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed. This MOSFET is suitable for use in Motor Drivers and Battery Management Systems (BMS). A Green Device version is available. Product Attributes Brand: HSH Technology: Trench Device Type: N-Channel MOSFET Switching Speed:
40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge
Product Overview The HSH4129 is a P-channel, 40V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
High cell density complementary MOSFET series HUASHUO HSCB2903 optimized for switching and power management
Product Overview The HSCB2903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDSON and gate charge characteristics, making them ideal for most small power switching and load switch applications. The HSCB2903 series meets RoHS and Green Product requirements with full function reliability approval. Product Attributes Brand: HS (implied by www.hs-semi.cn) Certifications: RoHS, Green Product
synchronous buck converter MOSFET HUASHUO HSBB3105 with low gate charge and high cell density design
Product Overview The HSBB3105 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, contributing to efficient performance. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Its advanced high cell density Trench technology ensures superior performance, including excellent CdV/dt effect decline. The HSBB3105 is
Lead Free N Channel Enhancement Mode MOSFET HUAYI HY4306P with High Current and Low RDS ON Resistance
Product OverviewThe HY4306 is a N-Channel Enhancement Mode MOSFET designed for power management in inverter systems and switching applications. It offers high performance with a low RDS(ON) and is available in reliable and rugged lead-free and green devices. This MOSFET is 100% avalanche tested.Product AttributesBrand: HUAYIOrigin: ChinaMaterial: Lead Free and Green Devices (RoHS Compliant)Certifications: RoHS CompliantTechnical SpecificationsModelTypeDrain-Source Voltage (V
Dual N channel 20V fast switching MOSFET HUASHUO HSSK7800 with low on resistance and high ESD rating
Product Overview The HSSK7800 is a dual N-channel, 20V fast switching MOSFET designed to offer an optimal balance of rapid switching speeds, low on-resistance, and cost-effectiveness. It meets RoHS and Green Product requirements with full function reliability approval. Ideal for PWM applications and load switching, this MOSFET also features an ESD rating of over 2000V HBM. Product Attributes Brand: WILLAS Certifications: RoHS, Green Product ESD Rating: >2000V HBM Technical
30V dual P channel MOSFET HUASHUO HSM4805 featuring low gate charge and excellent CdV dt effect decline
Product Overview The HSM4805 is a dual P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi
Switching Performance with HXY MOSFET AON7544 N Channel Enhancement Mode MOSFET and Low Gate Charge
Product Overview The AON7544 is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications. Product Attributes Brand: HUAXUANYANG HXY Origin: Shenzhen HuaXuanYang Electronics CO.,LTD Package: DFN3X3-8L Type: N-Channel Enhancement Mode MOSFET Technical Specifications Symbol Parameter
power management solutions featuring High Diode HD2310 N Channel MOSFET with 60V drain source voltage
Product Overview The HD2310 is a high-performance N-Channel MOSFET from High Diode Semiconductor, designed for efficient power and current handling. Encapsulated in a SOT-23 plastic package, this lead-free product is suitable for surface mount applications. Its robust design makes it ideal for DC/DC converters and battery switch applications, offering reliable performance with a 60V drain-source breakdown voltage and low on-resistance. Product Attributes Brand: High Diode
Fast Switching N channel MOSFET HUASHUO HSBA6074 with 60V voltage rating and high cell density design
Product Overview The HSBA6074 is a high cell density N-channel 60V Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approved, making it suitable for motor control, DC/DC converters, and synchronous rectifier applications. Its design also provides excellent CdV/dt effect decline.
N Channel MOSFET HUASHUO HSBA4054 40V Fast Switching Device for Or ing and Synchronous Rectification
Product Overview The HSBA4054 is a N-Channel 40V Fast Switching MOSFET designed with Advanced Trench Technology. It offers low gate charge and is 100% UIS Tested, making it suitable for high-efficiency applications. Key benefits include fast switching capabilities and robust performance. This MOSFET is ideal for Synchronous Rectification in SMPS, DC/DC Converters, and Or-ing applications. Product Attributes Brand: HS-Semi Technology: Advanced Trench Technology Testing: 100%
60V P channel MOSFET HUASHUO HSM6115 featuring fast switching and superior electrical characteristics
Product Overview The HSM6115 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key benefits include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product Type: P-Ch
High cell density trenched p channel mosfet HUASHUO HSP3105 for synchronous buck converter applications
Product Overview The HSP3105 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for demanding applications. Product Attributes Brand: HS-Semi Model: HSP3105 Certifications: RoHS, Green Product Reliability: 100% EAS Guaranteed
