Single FETs, MOSFETs
Trench technology p channel mosfet HUASHUO HSK5P10 100 volt fast switching device ideal for switching
Product Overview The HSK5P10 is a P-channel, 100V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
ESD Protected P Channel MOSFET with Low Gate Charge and TrenchFET Technology High Diode 3415
Product Overview This P-Channel MOSFET, encapsulated in a SOT-23 plastic package, offers excellent RDS(ON), low gate charge, and low gate voltages. It features TrenchFET power MOSFET technology and is ESD protected. Ideal for load switching and PWM applications, this RoHS compliant semiconductor is ...
30V P channel MOSFET HUASHUO HSS06P03 fast switching device with low gate charge and RoHS compliance
Product Overview The HSS06P03 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements ...
Load Switch MOSFET HUAYI HYG038N03LR1C2 Single N Channel 30V 84A Avalanche Tested for Battery Protection
Product OverviewThe HYG038N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for load switch and lithium battery protection board applications. It features a 30V/84A rating with low on-resistance of 3.3 m (typ.) at VGS = 10V and 5.1 m (typ.) at VGS = 4.5V. The device is 100% avalanche ...
Trenched P channel MOSFET HUASHUO HSBA100P03 with RoHS compliance and superior switching performance
Product Overview The HSBA100P03 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function ...
Power Switching N Channel MOSFET HSP6048 Featuring Trench Design and High Cell Density for Operation
Product Overview The HSP6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and ...
Power Control with HUASHUO HSBA90N12 N Channel Fast Switching MOSFET and Advanced Trench MOS Design
Product Overview The HSBA90N12 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced trench MOS technology, it offers low gate charge and low on-resistance (Rds(on)), with a guaranteed 100% EAS rating. This device is suitable for load switching...
Dual N Channel MOSFET HUASHUO HSBA6214 Featuring RoHS and Green Device Compliance for Power Systems
Product Overview The HSBA6214 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function ...
p channel mosfet HUASHUO HSBA3031 featuring 100 percent EAS guarantee and green product certification
Product Overview The HSBA3031 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function ...
Single N Channel MOSFET HUAYI HY1503C1 with 30V Drain Source Voltage and Avalanche Tested Performance
Product OverviewThe HY1503C1 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V drain-source voltage and 34A continuous drain current with low on-resistance (RDS(ON)) of 7.1m at VGS=10V. This device is 100% ...
Power Switching N Channel MOSFET HUAYI HY1420P with Low On Resistance and RoHS Compliant Green Device
Product OverviewThe HY1420P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 200V and a continuous drain current of 36A, with a low on-resistance of 57m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and ...
40V P channel MOSFET HUASHUO HSBA100P04 with high cell density trench technology and RoHS compliance
Product Overview The HSBA100P04 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS ...
n channel mosfet huashuo hsu4094 featuring advanced trench technology for power management in smps and dc dc converters
Product Overview The HSU4094 is a fast-switching N-channel MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This ...
fast switching P channel MOSFET HUASHUO HSU6115 with low RDS ON and high cell density trench design
HSU6115 P-Ch 60V Fast Switching MOSFETs Product Overview The HSU6115 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient ...
High Cell Density P Channel MOSFET HUASHUO HSP4119 Designed for Switching in Buck Converter Circuits
HSP4119 P-Channel 40V Fast Switching MOSFET The HSP4119 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers ...
HYG053N10NS1B MOSFET with 4.8 Milliohm Typical On Resistance and 100 Percent Avalanche Tested Design
Product OverviewThe HYG053N10NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a voltage rating of 100V and a continuous drain current of 120A. Key features include a low on-resistance of 4.8 m ...
Power Management N Channel MOSFET HUASHUO HSBA3058 with Fast Switching and Green Device Availability
Product Overview The HSBA3058 is a high-performance N-Channel Fast Switching MOSFET designed for demanding power management applications. Featuring a 30V drain-source voltage and fast switching capabilities, it is ideal for use in desktop computer power management, DC/DC converters, and isolated DC...
Single N Channel Enhancement Mode MOSFET HUAYI HYG025N04NR1D 40V 157A Low RDS ON Typical Device
Product OverviewThe HYG025N04NR1D is a single N-Channel enhancement mode MOSFET designed for various applications. It features a 40V/157A rating with a low RDS(ON) of 2m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is ...
200V fast switching MOSFET HUASHUO HSL3P20 P channel device with trench technology and low gate charge
Product Overview The HSL3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and ...
HUAKE SMT5N60 N Channel MOSFET designed for high frequency switching and low Crss in power electronics
Product OverviewThe SMT5N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, ...
