Single FETs, MOSFETs

Product Overview The HSK5P10 is a P-channel, 100V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a SOT-89 package. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology. Product Attributes

Product Overview This P-Channel MOSFET, encapsulated in a SOT-23 plastic package, offers excellent RDS(ON), low gate charge, and low gate voltages. It features TrenchFET power MOSFET technology and is ESD protected. Ideal for load switching and PWM applications, this RoHS compliant semiconductor is designed for high performance and reliability. Product Attributes Brand: HIGH DIODE SEMICONDUCTOR Package Type: SOT-23 Material: Plastic-Encapsulate Compliance: RoHS COMPLIANT

Product Overview The HSS06P03 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline. Product Attributes

Product Overview The HSBA100P03 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. It features super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology, enabling fast switching performance. Product Attributes

Product OverviewThe HYG038N03LR1C2 is a single N-Channel Enhancement Mode MOSFET designed for load switch and lithium battery protection board applications. It features a 30V/84A rating with low on-resistance of 3.3 m (typ.) at VGS = 10V and 5.1 m (typ.) at VGS = 4.5V. The device is 100% avalanche tested, reliable, rugged, and available in halogen-free versions. The PDFN8L(5x6) package ensures compact integration.Product AttributesBrand: HUAYIOrigin: ChinaPackage Type: PDFN8L

Product Overview The HSP6048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench

Product Overview The HSBA90N12 is a high-performance N-Channel Fast Switching MOSFET designed for demanding applications. Featuring advanced trench MOS technology, it offers low gate charge and low on-resistance (Rds(on)), with a guaranteed 100% EAS rating. This device is suitable for load switching, LED applications, networking, and quick chargers, providing efficient and reliable power management. It is available as a Green Device. Product Attributes Brand: HS-Semi

Product Overview The HSBA6214 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approval, making it suitable for applications requiring fast switching and low power loss. Product Attributes Brand: HS (implied by "www.hs-semi.cn") Product Type: Dual N

Product Overview The HSBA3031 is a P-channel, 30V fast switching MOSFET designed with high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product Attributes Brand: HS

Product OverviewThe HY1503C1 is a single N-Channel Enhancement Mode MOSFET designed for switching applications and power management in DC/DC converters. It offers a 30V drain-source voltage and 34A continuous drain current with low on-resistance (RDS(ON)) of 7.1m at VGS=10V. This device is 100% avalanche tested, reliable, rugged, and available in halogen-free and green (RoHS compliant) options.Product AttributesBrand: HY1503C1Origin: Xi'an Huayi Microelectronics Co., Ltd

Product OverviewThe HY1420P/B is an N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a high voltage rating of 200V and a continuous drain current of 36A, with a low on-resistance of 57m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with lead-free and green (RoHS compliant) options available. It is suitable for use in Uninterruptible Power Supplies and other power switching circuits.Product AttributesBr

Product Overview The HSBA100P04 is a P-channel, 40V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and availability as a green device. Product

Product Overview The HSU4094 is a fast-switching N-channel MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This MOSFET is 100% UIS and EAS tested, RoHS and Halogen-Free compliant, and guaranteed for 100% EAS. Product Attributes Brand: HS-Semi Technology: Advanced Trench Technology

HSU6115 P-Ch 60V Fast Switching MOSFETs Product Overview The HSU6115 is a high cell density trenched P-channel MOSFET designed for fast switching applications, particularly in synchronous buck converter circuits. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power management. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate

HSP4119 P-Channel 40V Fast Switching MOSFET The HSP4119 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology. Product

Product OverviewThe HYG053N10NS1P/B is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers high performance with a voltage rating of 100V and a continuous drain current of 120A. Key features include a low on-resistance of 4.8 m (typ.) at VGS = 10V, 100% avalanche tested, and a reliable, rugged design. Halogen-free devices are available, complying with RoHS standards.Product AttributesBrand: HymexaOrigin:

Product Overview The HSBA3058 is a high-performance N-Channel Fast Switching MOSFET designed for demanding power management applications. Featuring a 30V drain-source voltage and fast switching capabilities, it is ideal for use in desktop computer power management, DC/DC converters, and isolated DC/DC converters for telecom and industrial sectors. This device offers 100% EAS guaranteed performance, a super low gate charge, and excellent CdV/dt effect decline due to its

Product OverviewThe HYG025N04NR1D is a single N-Channel enhancement mode MOSFET designed for various applications. It features a 40V/157A rating with a low RDS(ON) of 2m (typ.) at VGS = 10V. This device is 100% avalanche tested, reliable, and rugged, with halogen-free options available. It is suitable for load switch and battery protection applications.Product AttributesBrand: HYGOrigin: ChinaCertifications: RoHS compliant, Halogen-freeTechnical SpecificationsPart NumberVDSS

Product Overview The HSL3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a Green Device option. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology. Product

Product OverviewThe SMT5N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for demanding power applications.Product AttributesBrand: HUAKE semiconductorsProduct Type: N-Channel MOSFETModel: SMT5N60Date: 2017.08Technical SpecificationsSy