Single FETs, MOSFETs
Hangzhou Silan Microelectronics SVF5N60D MOSFET for High Energy Pulse Handling in Power Electronics
Product OverviewThe SVF5N60F/D/K is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. Engineered for optimal performance, it offers reduced on-state resistance, superior switching characteristics, and enhanced high-energy pulse handling in avalanche and commutation modes. This device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.Product AttributesBr
Power Management Solutions Featuring Guangdong Hottech HKTD15N10 N Channel Power MOSFET for Switching
Product OverviewThe HKTD15N10 is an N-CHANNEL Power MOSFET designed for high-performance applications. It features a high density cell design for ultra-low on-resistance and is fully characterized for avalanche energy. This MOSFET is suitable for various power management tasks requiring efficient switching and low conduction losses.Product AttributesBrand: HOTTECHOrigin: SHENZHEN HOTTECH ELECTRONICS CO.,LTDCase Material: Molded PlasticFlammability: UL 94V-0Marking: D15N10Tech
synchronous buck converter component HUASHUO HSBB1260 trenched N channel MOSFET with low gate charge
Product Overview The HSBB1260 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and suitability for battery protection and power management systems.
High cell density trench P channel MOSFET HUASHUO HSCE2631 designed for power management solutions
Product Overview The HSCE2631 is a P-channel, 20V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device. Product Attributes Brand:
Power switching MOSFET HUASHUO AO3400A with super low gate charge and excellent dv dt effect decline
Product Overview The AO3400A is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. It features fast switching capabilities and meets RoHS and Green Product requirements, offering full function reliability. Product Attributes Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Technical Specifications Symbol
Power MOSFET HUASHUO HSU6117 P Channel 60V with Low Gate Charge and Full Function Reliability Approval
Product Overview The HSU6117 is a P-channel 60V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
650V N Channel MOSFET Hangzhou Silan Microelectronics SVF4N65M with Low On State Resistance
SVF4N65F/M/MJ/D - 4A, 650V N-CHANNEL MOSFETThe SVF4N65F/M/MJ/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan proprietary F-CellTM structure VDMOS technology. This advanced process and cell structure are optimized for minimal on-state resistance, superior switching performance, and enhanced high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor
power MOSFET transistor Hangzhou Silan Microelectronics SVG086R0NT for inverter and UPS power management
Product DescriptionThe SVG086R0NT(S)(D)(L5) is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's LVMOS technology. Its advanced process and cell structure are engineered to minimize on-state resistance and deliver superior switching performance. This device is widely applied in UPS and power management for inverter systems.Product AttributesBrand: Silan MicroelectronicsOrigin: HANGZHOU SILAN MICROELECTRONICS CO.,LTDHazardous Substance Control:
High cell density trench technology p channel mosfet huashuo hsce3031 optimized for power switching
Product Overview The HSCE3031 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and features approved full function reliability. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench
Power Management Device Guangdong Hottech IRLML0030 N Channel MOSFET with Fast Switching Capabilities
Product OverviewThe IRLML0030 is an N-channel MOSFET designed for surface mounting. It features a low on-resistance, fast switching capabilities, and a drain-source voltage of 30V with a continuous drain current of 5.3A. This device is suitable for various electronic applications requiring efficient power management.Product AttributesBrand: HOTTECH (SHENZHEN HOTTECH ELECTRONICS CO.,LTD, GUANGDONG HOTTECH INDUSTRIAL CO.,LTD)Case Material: Molded PlasticFlammability Classificat
p channel mosfet HUASHUO HSM4435 designed for fast switching and high cell density trench technology
Product Overview The HSM4435 is a P-channel, 30V fast-switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key features include super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand: HS-Semi Product
N Channel MOSFET HUAKE SMF4N65 650V designed for switching and power factor correction in power supply systems
Product OverviewThe SMF4N65 is a 650V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction applications. It offers features such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it a reliable choice for demanding power electronics designs.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMF4N65Revision: B/0Date: 2017
650V N channel MOSFET Hangzhou Silan Microelectronics SVF5N65F for DC DC Converters and Motor Drivers
SVF5N65D/F N-CHANNEL MOSFETThe SVF5N65D/F is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are widely adopted in AC-DC power supplies, DC-DC converters, and H
High Current N Channel MOSFET HUASHUO HSBA3086 Designed for DC DC Converter and Desktop Computer Power Management
Product Overview The HSBA3086 is an N-Channel Fast Switching MOSFET designed for power management applications. It features advanced trench technology, low gate charge, and high current capability, making it suitable for DC/DC converters and power management in desktop computers. This MOSFET is 100% UIS tested and is RoHS and Halogen-Free compliant. Product Attributes Brand: HS-Semi Technology: Advanced Trench Technology Compliance: RoHS and Halogen-Free Compliant Testing:
Hangzhou Silan Microelectronics SVF840F N Channel MOSFET for in PWM Motor Drivers and Power Converters
Silan Microelectronics SVF840F/D/S/MJ/FD N-CHANNEL MOSFET The SVF840F/D/S/MJ/FD is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology is optimized for reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H
Power MOSFET Hangzhou Silan Microelectronics SVF10N65F 650V 10A N channel TO 220F 3L transistor
Product OverviewThe SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM structure VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers
Power MOSFET N Channel Hangzhou Silan Microelectronics SVF18N50PN for Switching in AC DC and DC DC Power Supplies
Silan Microelectronics SVF18N50F(T)(PN)(FJ) N-CHANNEL MOSFETThe SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM
Power MOSFET N Channel Hangzhou Silan Microelectronics SVF7N65CF 7A 650V Low RDS on Fast Switching
Product OverviewThe SVF7N65CF/D/MJ/MJL/K/T is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and ensure robust high-energy pulse handling in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM
HUAKE SMF4N60 600V N Channel MOSFET suitable for high frequency switching mode power supplies
SMF4N60 600V N-Channel MOSFETThe SMF4N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching applications. It offers advantages such as low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, making it suitable for High Frequency Switching Mode Power Supplies and Active Power Factor Correction.Product AttributesBrand: HUAKE semiconductorsProduct Code: SMF4N60Document Version: B/0Document Date:
Fast switching N Channel MOSFET Guangdong Hottech HKTG48N10 with PDFN5x6 package and power management
Product OverviewThe HKTG48N10 is an N-Channel MOSFET designed for efficient power management. It features low on-resistance, fast switching speeds, and easily designed drive circuits, making it suitable for parallel applications. This MOSFET is housed in a PDFN5x6 package.Product AttributesBrand: HKT (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)Product Code: HKTG48N10Package Type: PDFN5x6Case Material: Molded PlasticUL Flammability Classification Rating: 94V-0Weight: 0.016 grams
