Single FETs, MOSFETs

quality Power management MOSFET Siliup SP60N30NQ N Channel with 60V rating and low input capacitance package factory

Power management MOSFET Siliup SP60N30NQ N Channel with 60V rating and low input capacitance package

Product Overview The SP60N30NQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This MOSFET is available in a PDFN2X2-6L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Model Number: SP60N30NQ Device Code: 60N30 Package: PDFN2X2-6L Technical Specifications Parameter

quality Low Rdson 100V P Channel MOSFET Siliup SP010P80TH Suitable for Load Switching and Power Management factory

Low Rdson 100V P Channel MOSFET Siliup SP010P80TH Suitable for Load Switching and Power Management

Product Overview The SP010P80TH is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, with 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and load switching. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 010P80 Package: TO-252 Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Unit

quality 1200V Drain Source Voltage Silicon Carbide MOSFET Slkor SL19N120A with Fast Recovery Intrinsic Diode factory

1200V Drain Source Voltage Silicon Carbide MOSFET Slkor SL19N120A with Fast Recovery Intrinsic Diode

Product OverviewThe SL19N120A is a Silicon Carbide (SiC) MOSFET designed for high-voltage applications. It offers low on-resistance, high switching speed with small parasitic capacitance, and a high operating junction temperature. Key features include a fast-recovery intrinsic diode, making it suitable for demanding power electronics systems.Product AttributesBrand: SLKORMicroMaterial: Silicon Carbide (SiC)Package: TO-247-3Origin: Not specifiedColor: Not specifiedCertificatio

quality Low Gate Charge 650V MOSFET Siliup SP30HF65TO Ideal for High Frequency and PWM Circuit Applications factory

Low Gate Charge 650V MOSFET Siliup SP30HF65TO Ideal for High Frequency and PWM Circuit Applications

Product Overview The SP30HF65TO is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency applications, it features fast switching speeds, low gate charge, and low RDS(on). It is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. The device comes in a TOLL package. Product Attributes Brand: Siliup Semiconductor

quality 40V 8A Dual N Channel MOSFET SLKOR SL4882A Featuring High Speed Switching for Power Management Applications factory

40V 8A Dual N Channel MOSFET SLKOR SL4882A Featuring High Speed Switching for Power Management Applications

Product OverviewThe SL4882A is a 40V/8A Dual N-Channel MOSFET featuring Trench Power LV MOSFET technology for high density cell design, resulting in low RDS(ON) and high-speed switching. It is ideal for applications such as battery protection, load switches, and power management.Product AttributesBrand: SLKORMicroOrigin: Not SpecifiedMaterial: Not SpecifiedColor: Not SpecifiedCertifications: Not SpecifiedTechnical SpecificationsParameterSymbolConditionMinTypMaxUnitStatic

quality 80V N Channel Power MOSFET Siliup SP80N03BGHNK with Low Gate Charge and Split Gate Trench Technology factory

80V N Channel Power MOSFET Siliup SP80N03BGHNK with Low Gate Charge and Split Gate Trench Technology

Product Overview The SP80N03BGHNK is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product

quality 100V N Channel MOSFET Siliup SP010N90NJ designed for fast switching and power management applications factory

100V N Channel MOSFET Siliup SP010N90NJ designed for fast switching and power management applications

Product Overview The SP010N90NJ is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance, and 100% single pulse avalanche energy testing. This MOSFET is suitable for applications such as DC-DC converters and power management, and is available in a PDFN3X3-8L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: N-Channel MOSFET Package: PDFN3X3-8L Device Code: SP010N90NJ

quality Voltage Controlled Small Signal Slkor 2N7002KW N Channel MOSFET with High Saturation Current Rating factory

Voltage Controlled Small Signal Slkor 2N7002KW N Channel MOSFET with High Saturation Current Rating

Product OverviewThe 2N7002KW is an N-Channel MOSFET designed for high-density cell design, offering low RDS(on). It functions as a voltage-controlled small-signal switch, known for its ruggedness, reliability, and high saturation current capability. This ESD-protected MOSFET is ideal for load switching in portable devices and DC/DC converters.Product AttributesBrand: SLKORMicro (implied by website)Model: 2N7002KWPackage: SOT-323Channel Type: N-ChannelTechnical SpecificationsP

quality power switching P channel MOSFET Siliup SP30P25T1 with low RDS on resistance and high current rating factory

power switching P channel MOSFET Siliup SP30P25T1 with low RDS on resistance and high current rating

Product Overview The SP30P25T1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability in a surface mount SOT-23-3L package. This MOSFET is suitable for applications such as battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Type: P-Channel MOSFET Package Type: SOT-23-3L Device Code: 30P25 Technical Specifications Parameter Symbol Conditions Min.

quality 30V complementary MOSFET Siliup SP3013CNJ PDFN3X3 8L package tested for single pulse avalanche energy factory

30V complementary MOSFET Siliup SP3013CNJ PDFN3X3 8L package tested for single pulse avalanche energy

Product Overview The SP3013CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient switching applications. It features a fast switching speed and is available in a surface mount PDFN3X3-8L package. This MOSFET is ROHS Compliant & Halogen-Free and undergoes 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor

quality Siliup Semiconductor SP3011ACNJ 30V MOSFET with ROHS Compliance and PDFN3X3 8L Surface Mount Package factory

Siliup Semiconductor SP3011ACNJ 30V MOSFET with ROHS Compliance and PDFN3X3 8L Surface Mount Package

Product Overview The SP3011ACNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. The device is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP3011ACNJ Certifications: ROHS Compliant & Halogen-Free

quality N Channel MOSFET 20V 2A Slkor FDN327N Featuring Trench Power LV Technology for PWM Load Switching factory

N Channel MOSFET 20V 2A Slkor FDN327N Featuring Trench Power LV Technology for PWM Load Switching

FDN327N - 20V/2A N-Channel MOSFET The FDN327N is an N-Channel MOSFET featuring Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is designed for applications such as PWM and load switching. Product Attributes Brand: slkormicro Model: FDN327N Revision: Rev.1 Date: 23 July 2020 Technical Specifications Parameter Condition Min Typ Max Unit Absolute Maximum Ratings Drain-Source Voltage (VDS) 20 V Gate-Source Voltage (VGS) 8 V Junction

quality Power switching 30V P Channel MOSFET Siliup SP30P38P8 featuring low RDSon and fast switching performance factory

Power switching 30V P Channel MOSFET Siliup SP30P38P8 featuring low RDSon and fast switching performance

Product Overview The SP30P38P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Device Code: 30P38 Package: SOP-8L Technical Specificat

quality 60V N Channel MOSFET Siliup 2N7002 Ideal for Battery Switch and DC DC Converter Circuit Applications factory

60V N Channel MOSFET Siliup 2N7002 Ideal for Battery Switch and DC DC Converter Circuit Applications

Product Overview The 2N7002 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, this MOSFET offers high power and current handling capabilities. It is suitable for use in battery switches and DC/DC converters. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Model: 2N7002 Channel Type: N-Channel Package: SOT-23 Circuit Diagram: Marked as 7002 Technical Specifications Parameter Symbol Conditions Min

quality Dual N Channel Power MOSFET Siliup SP30N08GDNJ 30V Low Gate Charge Fast Switching for DC DC Converter factory

Dual N Channel Power MOSFET Siliup SP30N08GDNJ 30V Low Gate Charge Fast Switching for DC DC Converter

Product Overview The SP30N08GDNJ is a 30V Dual N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications and isolated DC/DC converters in telecom and industrial sectors. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product

quality 60V N Channel Power MOSFET Siliup SP60N03GTQ with Split Gate Trench Technology and Low Gate Charge factory

60V N Channel Power MOSFET Siliup SP60N03GTQ with Split Gate Trench Technology and Low Gate Charge

Product Overview The SP60N03GTQ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd.

quality N channel MOSFET Slkor SL2314 optimized for low inline power loss and operation in compact surface mount package factory

N channel MOSFET Slkor SL2314 optimized for low inline power loss and operation in compact surface mount package

Product OverviewThe SL2314 is an N-Channel logic enhancement mode power MOSFET manufactured using high cell density advanced trench technology. This technology is optimized for minimal on-state resistance, making it ideal for low voltage applications requiring low in-line power loss in a compact surface mount package. It offers super high design for extremely low RDS(ON) and exceptional on-resistance with maximum DC current capability.Product AttributesBrand: SLKORMicroCertif

quality Power Switching 150V N Channel MOSFET Siliup SP015N15HTQ with Low Gate Charge and High Drain Current factory

Power Switching 150V N Channel MOSFET Siliup SP015N15HTQ with Low Gate Charge and High Drain Current

Product Overview The SP015N15HTQ is a 150V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Code: SP015N15HTQ Technology: N-Channel MOSFET Package: TO-220-3L Technical

quality Low On Resistance N Channel MOSFET Siliup SP30N10NQ 30V in PDFN2X2 6L Package for Power Management factory

Low On Resistance N Channel MOSFET Siliup SP30N10NQ 30V in PDFN2X2 6L Package for Power Management

Product Overview The SP30N10NQ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power management functions and DC-DC converters, this MOSFET features low on-resistance and low input capacitance. It is available in a PDFN2X2-6L package. Product Attributes Brand: Siliup Semiconductor Technology Co. Ltd. Product Line: SP30N10NQ Channel Type: N-Channel Voltage Rating: 30V Package: PDFN2X2-6L Technical Specifications Parameter Symbol Conditions

quality High Current Capability N-Channel Power MOSFET Slkor SL2308 with Compact SOT23-3 Package and Loss factory

High Current Capability N-Channel Power MOSFET Slkor SL2308 with Compact SOT23-3 Package and Loss

Product OverviewThe SL2308 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density advanced trench technology. This technology minimizes on-state resistance, making it ideal for low-voltage applications requiring low in-line power loss in a compact SOT23-3 surface mount package. It offers exceptional on-resistance and maximum DC current capability.Product AttributesBrand: UniverChip SemiconductorCertifications: Full RoHS compliancePack

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