Single FETs, MOSFETs
High Current P Channel MOSFET BLUE ROCKET BRCS350P04DP with Low Voltage Operation and TO 252 Package
Product Overview The BRCS350P04DP is a P-Channel MOSFET in a TO-252 plastic package, designed for low voltage applications. It features a Drain-Source Voltage (VDS) of -40V and a continuous Drain Current (ID) of -27.5A. This HF product is suitable for high efficiency switching in power management ...
Compact BLUE ROCKET BSS123 N channel MOSFET designed for battery management and PWM control systems
Product Overview The BSS123 is an N-channel MOSFET in a SOT-23 plastic package, designed for high-density battery applications with extremely low RDS(ON). This device is suitable for use as a load switch or in Pulse Width Modulation (PWM) applications. Product Attributes Brand: FSB (implied by ...
N Channel MOSFET Bruckewell MSD100N25 with Green Product Compliance and Full Function Reliability
Product Overview The MSD100N25 is a high-performance N-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function ...
Power Switching MOSFET BORN BMQ4435P P Channel with 30 Volt Drain Source Voltage and RoHS Compliance
Product Overview The BMQ4435P is a P-Channel Advanced Mode MOSFET designed for efficient power management and switching applications. It features a VDS of -30V and a continuous drain current (ID) of -40A. With a typical RDS(ON) of 11m at VGS = -10V and 15m at VGS = -4.5V, this MOSFET offers low on...
Load Switching with BLUE ROCKET BRCS3404MC N Channel MOSFET Offering 5.5A Continuous Current and Loss
Product Overview The BRCS3404MC is an N-channel MOSFET in a SOT23-3 plastic package, designed for applications requiring efficient load switching and Pulse Width Modulation (PWM). This HF (Halogen-Free) product offers a Drain-Source Voltage (VDS) of 30V and a continuous Drain Current (ID) of 5.5A. ...
N Channel MOSFET BLUE ROCKET BRD4N65 Featuring TO 252 Package and Fast Switching Speeds for Adapters
Product Overview The BRD4N65 is an N-channel MOSFET in a TO-252 plastic package, designed for power switch circuits in adapters and chargers. It features low gate charge, low feedback capacitance (crss), and fast switching speeds, making it well-suited for these applications. The device offers a ...
N Channel MOSFET PDFN56 Package Featuring Low RDS ON and Fast Switching BLUE ROCKET BRCS020N03ZC for Power Systems
Product Overview The BRCS020N03ZC is an N-Channel MOSFET housed in a PDFN56 plastic package. It features low RDS(ON) for minimized conductive loss, low Gate Charge for fast switching, and low thermal resistance. This product is also Halogen-Free (HF). It is designed for applications such as battery ...
High Voltage N Channel MOSFET BORN BME10N65 Featuring 650V VDSS and Low Gate Charge for Power Switching
Product Overview The BMx10N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET boasts a VDSS of 650V and an ID of 10A. It offers fast switching speeds and a low gate charge, with a typical RDS(ON) of 0.79 at ...
Trench DMOS Technology MOSFET Bruckewell MSHM40N085 with 40 Volt Drain Source Voltage and Operation
Product Overview The MSHM40N085 is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and enhanced high-energy pulse handling in avalanche and commutation modes. It is well-suited for high...
Low Resistance N Channel MOSFET BORN BM138KE Featuring Advanced Trench Process and 0.5A Drain Current
Product Overview The BM138KE is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed with Advanced Trench Process Technology and a High Density Cell Design, it offers an ultra-low on-resistance. This MOSFET features a BVDSS of 50V and a continuous drain current (ID) of 0.5A at VGS=4.5V. It is ...
N channel MOSFET power switch transistor BORN BMO04N480 with 60A drain current and low on resistance
Product Overview The BMO04N480 is an N-channel MOSFET designed for power switch circuits in adaptors, chargers, e-cigarettes, and electric tools. It features a high continuous drain current of 60A and low on-resistance, with typical values of 4.0m at VGS=10V and 5.5m at VGS=4.5V. This MOSFET offers ...
Trench DMOS Technology Bruckewell MSH40N30D Dual N Channel MOSFET for Notebook and Hand Held Devices
Product Overview The MSH40N30D is a Dual N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide superior robustness against high energy pulses in avalanche and commutation modes. It is ideally suited ...
N channel MOSFET BLUE ROCKET BR20N40 with fast switching and high avalanche energy in TO 220 package
Product Overview The BR20N40 is an N-channel MOSFET in a TO-220 plastic package. It is designed for high voltage, high-speed power switching applications, offering low gate charge, fast switching capability, high avalanche energy, and improved dv/dt capability. This makes it suitable for high...
N Channel Enhancement Mode MOSFET BORN AO3400A with Advanced Trench Technology and Low On Resistance
Product Overview The AO3400A is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is designed for efficient power management applications. It is ROHS compliant and comes in a SOT-23 package. ...
High Density Cell Design and Ultra Low On Resistance P Channel MOSFET BORN SI2333 in SOT 23 Package
Product Overview The SI2333 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package. Key electrical characteristics include a drain-source breakdown voltage of -12V, a gate ...
100 Volt Drain Source Voltage N Channel MOSFET Bruckewell MSB100N023 Designed for High Energy Pulse Applications
Product Overview The MSB100N023 is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse withstand capability in avalanche and commutation modes. It is well...
High reliability BLUE ROCKET BRCS200P03DP P channel MOSFET with low on resistance and fast switching
Product Overview The BRCS200P03DP is a P-channel MOSFET in a TO-252 plastic package, designed for power management in industrial DC/DC converters. It features low on-resistance, fast switching speeds, and is a halogen-free product. This MOSFET is suitable for applications requiring efficient power ...
Low voltage MOSFET BLUE ROCKET BRCS60N02DP with TO 252 package featuring fast switching and dissipation
Product Overview The BRCS60N02DP is an N-channel MOSFET housed in a TO-252 plastic package. It offers low RDS(on), low gate charge, low Crss, and fast switching speeds. This halogen-free product is designed for low-voltage applications, including automotive circuits, DC/DC converters, and high...
P Channel MOSFET SOT 23 Package Featuring BORN BSS84 Ultra Low On Resistance Device
Product Overview The BSS84 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, suitable for various applications requiring efficient power handling. Key electrical characteri...
100 Volt N Channel MOSFET Bruckewell MSB100N042SB with 100 Percent EAS Guarantee and RoHS Compliance
Product Overview The MSB100N042SB is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-state resistance (RDS(ON)), deliver superior switching performance, and provide robust withstand capability for high energy pulses in avalanche ...
