Single FETs, MOSFETs

Product Overview The SI2328 is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient power management. It is available in a SOT-23 package. Product Attributes Technology: Advanced trench process Cell Design: High Density Cell Design Type: N-Channel Enhancement-Mode MOSFET Package: SOT-23 Compliance: ROHS Technical

Product Overview The BMO10N380 is a 100V N-channel MOSFET designed for power switching applications, motor control, and UPS systems. It features fast switching, low RDS(on), low gate charge, low gate resistance, and is 100% UIS tested. This MOSFET is available in a PDFN5*6 package. Product Attributes Brand: BMO Product Type: N-channel MOSFET Package: PDFN5*6 Marking: T043N10N Delivery Mode: Tape and reel Base Quantity: 5K Technical Specifications Parameter Symbol Conditions

Product Overview The SI2305 is a P-Channel MOSFET designed with advanced trench process technology and high-density cell design for ultra-low on-resistance. It offers excellent performance characteristics, making it suitable for various applications requiring efficient power switching. Key features include a low on-state resistance, fast switching speeds, and robust thermal management capabilities, all packaged in a compact SOT-23 form factor. Product Attributes Brand: Not

Product Overview The BM3139KT is a -20V P-Channel Trench Technology Power MOSFET from BORN SEMICONDUCTOR, INC. Designed for efficiency, it features low RDS(ON) and low gate charge, making it suitable for load switching, low current inverters, and low current DC/DC converters. This MOSFET offers ESD protection and is available in a SOT-523 package. Product Attributes Brand: BORN SEMICONDUCTOR, INC. Product Code: BM3139KT Technology: Trench Technology Power MOSFET Channel Type:

Product Overview The BMx18N50 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high Drain-Source Voltage (VDSS) of 500V and a continuous Drain Current (ID) of 18A. The MOSFET offers fast switching speeds and low gate charge, with a typical On-Resistance (RDS(ON)) of 0.24 at VGS=10V. The product is compliant with EU RoHS 2011/65/EU directive and is constructed with molded plastic meeting UL

Product Overview The BRCS4443SC is a P-Channel Enhancement Mode Field Effect Transistor designed for use in a SOP-8 plastic package. It is suitable for battery protection and load switch applications. Key features include a Drain-Source Voltage (VDS) of -40V, a continuous Drain Current (ID) of -6A at VGS = -10V, and a low on-resistance (RDS(ON)) of less than 42m at VGS = -10V and less than 63m at VGS = -4.5V. Product Attributes Brand: FS (implied by URL http://www.fsbrec.com)

Product Overview The MSH80N030 is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical

Product Overview The SI2310A is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Engineered with advanced trench process technology and a high-density cell design, it offers ultra-low on-resistance. This MOSFET is suitable for surface mount applications, packaged in a SOT-23 form factor. It features a drain-source voltage of 60V and a continuous drain current of 3A, with typical on-resistance values of 80m at VGS=10V and 90m at VGS=4.5V. Product Attributes Brand: BORN

Product Overview The IRLML6402 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. Packaged in a SOT-23 for surface mounting, this MOSFET is suitable for various applications requiring efficient power management. Key electrical characteristics include a low Gate Threshold Voltage and low Static Drain-Source On-State Resistance at specified current and voltage levels. Product Attributes Brand: Not

Product Overview The BMI06P331 is a P-Channel MOSFET designed with split gate trench MOSFET technology. It offers low RDS(ON) and FOM, along with extremely low switching loss and excellent stability and uniformity. This MOSFET is suitable for power management and portable equipment applications. Product Attributes Brand: Not specified Origin: Not specified Material: Not specified Color: Not specified Technical Specifications Parameter Symbol Conditions Min. Typ. Max. Units

Product Overview The BMQ100N38 is a 100V/38A N-channel Power MOSFET designed for efficient power management and current switching applications. It features ultra-low RDS(on) at 7.0m (Typ.) at VGS = 10V and 9.0m (Typ.) at VGS = 4.5V, along with low gate charge. This MOSFET is Pb-free lead-plated, halogen-free, and RoHS-compliant, making it suitable for demanding applications in computing, consumer electronics, Industry 4.0, and communication systems. It is also ideal for

Product Overview The MS40N05 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Its advanced trench technology contributes to super low gate charge and excellent CdV/dt effect decline. Product Attributes Brand:

Product Overview The 2N7002KW is an N-Channel MOSFET designed with a super high dense cell structure for extremely low RDS(ON). It offers reliable and rugged performance, packaged in a SOT-323 surface mount package. This MOSFET features an ESD rating of >2000V HBM, making it suitable for applications requiring robust electrostatic discharge protection. Product Attributes Brand: Not explicitly stated, but associated with www.born-tw.com Package Type: SOT-323 Channel Type: N

Product Overview The AO3401F is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, making it suitable for various applications requiring efficient power management. Key electrical characteristics include a drain-source breakdown voltage of -30V and low on-state resistance values of 65m (typ.) at VGS = -10V and 75m (typ.) at VGS = -4.5V. Product

Product Overview The AO3416 is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package. This MOSFET offers a drain-source voltage of up to 20V and a continuous drain current of 6.5A, with low on-resistance values of 22m at VGS=4.5V and 26m at VGS=2.5V. Its design is optimized for efficient power management in surface-mount applications. Product Attributes

Product Overview The BM8205 is a 20V Dual N-Channel Enhancement MOSFET designed for power switching applications. It features very low on-resistance (RDS(ON)) due to its high-density cell design, making it suitable for PWM applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is characterized by its fully characterized avalanche voltage and current and comes in a SOT23-6L surface mount package. Product Attributes Brand: BM

Product Overview The MSH30N052 is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-resistance (RDS(ON)), enhance switching performance, and provide superior robustness in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval. Typical applications include power

Product Overview The BRCS4354SC is an N-Channel MOSFET in a SOP-8 plastic package, designed for high-efficiency synchronous rectification in DC/DC and AC/DC converters. It is also suitable for isolated DC/DC converters in telecom and industrial applications. Key features include a VDS of 30V, ID of 23A, and low on-resistance (RDS(ON)) at both 10V and 4.5V gate drive. This is a Halogen-Free product. Product Attributes Brand: FS (implied by website URL) Product Type: N-Channel

Product Overview The MSQ100N03D is a high-performance dual N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for networking, load switch, and LED applications. Product Attributes Brand: Bruckewell Technology Corporation Product Type

Product Overview The 2N7002T is an N-Channel MOSFET featuring an advanced trench cell design for high-speed switching and high saturation current capability. It is ESD protected and available in a SOT-523 surface mount package. This MOSFET is suitable for applications in portable appliances and load switch appliances. Product Attributes Brand: Not explicitly stated, but associated with www.born-tw.com Package Type: SOT-523 Material: Not specified Color: Not specified Origin: