Single FETs, MOSFETs
N Channel Enhancement Mode MOSFET BORN SI2328 Featuring High Density Cell Design and ROHS Compliance
Product Overview The SI2328 is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient power management. It is available in a SOT-23 package. ...
100V N channel MOSFET BORN BMO10N380 with low gate resistance and 100 percent UIS tested reliability
Product Overview The BMO10N380 is a 100V N-channel MOSFET designed for power switching applications, motor control, and UPS systems. It features fast switching, low RDS(on), low gate charge, low gate resistance, and is 100% UIS tested. This MOSFET is available in a PDFN5*6 package. Product ...
Power Switching P Channel MOSFET BORN SI2305 with Low On Resistance and Compact SOT 23 Package Design
Product Overview The SI2305 is a P-Channel MOSFET designed with advanced trench process technology and high-density cell design for ultra-low on-resistance. It offers excellent performance characteristics, making it suitable for various applications requiring efficient power switching. Key features ...
N Channel Power MOSFET BORN BMF18N50G 500 Volt 18 Ampere for Adaptors and Charger Applications
Product Overview The BMx18N50 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. designed for power switch circuits in adaptors and chargers. It features a high Drain-Source Voltage (VDSS) of 500V and a continuous Drain Current (ID) of 18A. The MOSFET offers fast switching speeds and low gate ...
P Channel Trench Technology Power MOSFET BORN BM3139KT with Low RDS ON and ESD Protection Features
Product Overview The BM3139KT is a -20V P-Channel Trench Technology Power MOSFET from BORN SEMICONDUCTOR, INC. Designed for efficiency, it features low RDS(ON) and low gate charge, making it suitable for load switching, low current inverters, and low current DC/DC converters. This MOSFET offers ESD ...
Battery Protection Load Switch P Channel Transistor BLUE ROCKET BRCS4443SC with SOP 8 Package Design
Product Overview The BRCS4443SC is a P-Channel Enhancement Mode Field Effect Transistor designed for use in a SOP-8 plastic package. It is suitable for battery protection and load switch applications. Key features include a Drain-Source Voltage (VDS) of -40V, a continuous Drain Current (ID) of -6A ...
Trench DMOS N Channel MOSFET Bruckewell MSH80N030 with Enhanced Avalanche and Commutation Protection
Product Overview The MSH80N030 is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust protection against high energy pulses in avalanche and commutation modes. It is well-suited ...
Low On Resistance N Channel MOSFET BORN SI2310A with 3A Drain Current and 60V Voltage SOT 23 Package
Product Overview The SI2310A is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Engineered with advanced trench process technology and a high-density cell design, it offers ultra-low on-resistance. This MOSFET is suitable for surface mount applications, packaged in a SOT-23 form factor. It ...
Low On Resistance P Channel MOSFET BORN IRLML6402 with SOT 23 Package and Low Gate Threshold Voltage
Product Overview The IRLML6402 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. Packaged in a SOT-23 for surface mounting, this MOSFET is suitable for various applications requiring efficient power management. Key ...
Low RDS ON P Channel MOSFET BORN BMI06P331 with split gate trench technology and excellent stability
Product Overview The BMI06P331 is a P-Channel MOSFET designed with split gate trench MOSFET technology. It offers low RDS(ON) and FOM, along with extremely low switching loss and excellent stability and uniformity. This MOSFET is suitable for power management and portable equipment applications. ...
Power switching N channel MOSFET BORN BMQ100N38 featuring 100V 38A low gate charge and RoHS compliance
Product Overview The BMQ100N38 is a 100V/38A N-channel Power MOSFET designed for efficient power management and current switching applications. It features ultra-low RDS(on) at 7.0m (Typ.) at VGS = 10V and 9.0m (Typ.) at VGS = 4.5V, along with low gate charge. This MOSFET is Pb-free lead-plated, ...
40 Volt N Channel MOSFET Bruckewell MS40N05 Featuring Low RDS ON and High Cell Density for Switching
Product Overview The MS40N05 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for most small power switching and load switch applications. This device meets RoHS and Green Product requirements and has ...
Compact SOT 323 N Channel MOSFET BORN 2N7002KW Offering High ESD Tolerance and Switching Performance
Product Overview The 2N7002KW is an N-Channel MOSFET designed with a super high dense cell structure for extremely low RDS(ON). It offers reliable and rugged performance, packaged in a SOT-323 surface mount package. This MOSFET features an ESD rating of >2000V HBM, making it suitable for application...
High Density Cell Design and Ultra Low On Resistance P Channel MOSFET BORN AO3401F in SOT 23 Package
Product Overview The AO3401F is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, making it suitable for various applications requiring efficient power management. Key ...
Surface Mount N Channel MOSFET BORN AO3416 with Ultra Low On Resistance and High Density Cell Design
Product Overview The AO3416 is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package. This MOSFET offers a drain-source voltage of up to 20V and a continuous drain current of 6.5A...
20V Dual N Channel Enhancement MOSFET BORN BM8205 Low On Resistance for Power Switching Applications
Product Overview The BM8205 is a 20V Dual N-Channel Enhancement MOSFET designed for power switching applications. It features very low on-resistance (RDS(ON)) due to its high-density cell design, making it suitable for PWM applications, hard switched and high frequency circuits, and uninterruptible ...
Trench DMOS Based N Channel MOSFET Bruckewell MSH30N052 Suitable for Synchronous Rectifier Circuits
Product Overview The MSH30N052 is an N-Channel MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-resistance (RDS(ON)), enhance switching performance, and provide superior robustness in avalanche and commutation modes. It is ideally suited for high...
N Channel MOSFET SOP 8 Plastic Package Featuring BLUE ROCKET BRCS4354SC for DC DC and AC DC Converters
Product Overview The BRCS4354SC is an N-Channel MOSFET in a SOP-8 plastic package, designed for high-efficiency synchronous rectification in DC/DC and AC/DC converters. It is also suitable for isolated DC/DC converters in telecom and industrial applications. Key features include a VDS of 30V, ID of ...
N Channel MOSFET SOT 523 Package Featuring BORN 2N7002T Suitable for Portable Appliance Applications
Product Overview The 2N7002T is an N-Channel MOSFET featuring an advanced trench cell design for high-speed switching and high saturation current capability. It is ESD protected and available in a SOT-523 surface mount package. This MOSFET is suitable for applications in portable appliances and load ...
SOP 8 Package Dual N Channel MOSFET Bruckewell MSQ100N03D Suitable for Networking Load Switch and LED Applications
Product Overview The MSQ100N03D is a high-performance dual N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, ...
