Single FETs, MOSFETs

Product Overview The Bruckewell CMS120N080WK is a SiC N-Channel 1200-V (D-S) MOSFET designed for high-speed switching applications. It offers high blocking voltage and fast reverse recovery, leading to low capacitance and high system efficiency. This MOSFET is ideal for demanding applications such as solar inverters, switch mode power supplies, UPS, induction heating and welding, EV charging stations, and high voltage DC/DC converters. Its easy paralleling capability further

Product Overview The BMx20N65 is a high-performance N-Channel MOSFET designed by BORN SEMICONDUCTOR, INC. This MOSFET features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 20A, with a low on-resistance (RDS(ON)) of 0.5 at VGS=10V. Its fast switching characteristics and low gate charge make it ideal for power switch circuits in adaptors and chargers. The device is constructed with molded plastic, meeting UL Flammability Classification

Product Overview The BM3402 is an N-Channel Enhancement-Mode MOSFET in a SOT-23 package, designed for efficient power management. It features low RDS(on) at 10V VGS and 3.3V logic-level control, making it suitable for DC-to-DC converters, power management in battery-driven portables, low-side load switches, and charging switches. Its Pb-free and RoHS compliant nature ensures environmental adherence. Product Attributes Brand: BM3402 Type: N-Channel Enhancement-Mode MOSFET

Product Overview The MSH60N063 is a high-performance N-Channel MOSFET from Bruckewell Technology Corporation, designed with extreme high cell density for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, making it suitable for demanding applications such as motor drives, power tools, and LED lighting. Product

Product Overview The BRB80N08A is an N-channel MOSFET designed for high-efficiency switching DC/DC converters and switch-mode power supplies. It features low gate charge, low feedback capacitance, and fast switching speeds, making it suitable for demanding power applications. This product is halogen-free. Product Attributes Brand: Fsb (implied by URL and company code) Product Type: N-Channel MOSFET Package Type: TO-263 Plastic Package Certifications: Halogen-free Product

Product Overview The BM2300 is an N-Channel MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. It is designed for efficient power management applications and is RoHS compliant, packaged in a SOT-23. This MOSFET offers excellent electrical characteristics and thermal performance, making it suitable for various electronic circuits requiring low power loss and high switching speeds. Product Attributes Brand: BOR-TW

Product Overview The MSHM60N29D is a Dual N-Channel 60-V (D-S) MOSFET from Bruckewell Technology Corporation, utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device adheres to RoHS and Green Product requirements and is 100% EAS

Product Overview The MSD100P12 is a high-performance P-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for networking, load switch, and LED applications. Product Attributes Brand: Bruckewell Technology Corporation Model: MSD100P12 Technology: P

Product Overview The BMS2301 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-323 surface mount package, offering efficient performance for various applications. Key electrical characteristics include a Drain-Source Breakdown Voltage of -20V and low on-state resistance values, such as 82m at VGS = -4.5V and ID = -1.0A. Product Attributes Brand: Born Package Type: SOT-323

Product Overview The MSP100N27 is an N-Channel 100-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), enhance switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applicatio

Product Overview The MSHM30N46 is a high-performance N-Channel 30-V (D-S) MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include MB, VGA, Vcore, POL, and SMPS 2nd SR. Product Attributes Brand: Bruckewell Technology Corporation

Product Overview The BMx4N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 4A. It offers fast switching capabilities and low gate charge, contributing to efficient power conversion. The device is available in multiple package types, including TO-220AB, TO-220F, TO-263, and TO-252, catering to

Product Overview The BRCS019N10SHTL is an N-Channel MOSFET designed for high-power applications. It features a TOLL-8L plastic package and is a Halogen-Free (HF) product. This MOSFET is suitable for use in LCD TV appliances and high-power inverter systems, offering a drain-source voltage of 100V and a continuous drain current of 292A. Its low on-resistance, typically 1.6m at 10V, makes it efficient for demanding power conversion tasks. Product Attributes Brand: FSB (implied

Product Overview The MS40P05AU is a high-performance P-Channel MOSFET featuring extreme high cell density, designed to deliver excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. It is suitable for MB, VGA, Vcore, POL applications, and load switches, with AEC-Q101 qualification available. Product Attributes Brand: Bruckewell

Product Overview The SI2300 is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. It features a super high dense cell design for extremely low RDS(ON), offering reliable and rugged performance. This MOSFET is available in a SOT-23 surface mount package, making it suitable for various electronic applications requiring efficient power management. Product Attributes Brand: BORN SEMICONDUCTOR, INC. Product Name: SI2300 Technology: N-Channel MOSFET Package Type: SOT-23 (Surface

Product Overview The MSH30P100 is a P-Channel 30-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized for minimal RDS(ON), superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications and meets RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. The device is designed for

Product Overview The AO3407 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, offering efficient performance for various applications. Product Attributes Brand: Not explicitly mentioned, but the website domain suggests 'born-tw.com'. Package: SOT-23 Marking: 3407 Technical Specifications Characteristic Symbol Min Typ Max Unit Conditions Drain-Source

Product Overview The BNT15N10 is an N-Channel MOSFET featuring Trench Technology for enhanced performance. It offers a Drain-Source Voltage (VBR(DSS)) of 100V and a continuous Drain Current (ID) of 15A. Key advantages include low RDS(ON) at 88m (typ.) at 10V, low gate charge, and low gate resistance. This MOSFET is designed for power switching applications, including MB/VGA Vcore, SMPS 2nd Synchronous Rectifier, and lighting solutions. Product Attributes Brand: BNT Type: N

Product Overview The MS23P11B is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Key advantages include its advanced high cell density trench technology, super low gate charge, and

Product Overview The BRD4N70 is an N-channel MOSFET in a TO-252 plastic package, designed for power switch circuits in adapters and chargers. It features low gate charge, low feedback capacitance, and fast switching speeds, making it well-suited for these applications. Product Attributes Brand: FS (implied by datasheet URL) Package Type: TO-252 Channel Type: N-Channel Technical Specifications Parameter Symbol Rating Unit Test Conditions Min Typ Max Absolute Maximum Ratings